Multicolor recording medium, multicolor recording method and device using the same
    4.
    发明申请
    Multicolor recording medium, multicolor recording method and device using the same 审中-公开
    多色记录介质,多色记录方法及使用其的装置

    公开(公告)号:US20060030484A1

    公开(公告)日:2006-02-09

    申请号:US11197265

    申请日:2005-08-05

    IPC分类号: B41M5/40

    摘要: A multicolor recording medium, recording method and device using the same are disclosed. The multicolor recording medium includes a substrate having top and bottom surfaces and a photosensitive decoloring layer. A low-temperature thermosensitive coloring layer is disposed on the top surface of the substrate. A high-temperature thermosensitive coloring layer is disposed on the low-temperature thermosensitive coloring layer.

    摘要翻译: 公开了一种多色记录介质,记录方法和使用其的装置。 多色记录介质包括具有顶表面和底表面的基底和感光褪色层。 低温热敏着色层设置在基板的顶表面上。 高温热敏着色层设置在低温热敏着色层上。

    Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using same
    8.
    发明申请
    Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using same 审中-公开
    形成薄膜的方法和使用其制造栅极结构和电容器的方法

    公开(公告)号:US20080057224A1

    公开(公告)日:2008-03-06

    申请号:US11790445

    申请日:2007-04-25

    IPC分类号: C23C8/00

    CPC分类号: C23C8/80 C23C4/123 C23C8/02

    摘要: A method of manufacturing a thin film includes providing a metal organic precursor onto a substrate where the metal organic precursor is heated to a temperature of about 60° C. to about 95° C. and has a saturated vapor pressure of about 1 Torr to about 5 Torr. An oxidizing agent including oxygen for oxidizing the metal organic precursor is provided onto the substrate. The metal organic precursor and the oxidizing agent are chemically reacted to form the thin film including metal oxide. The thin film is easily available in a gate insulation layer of a gate structure, a dielectric layer of a capacitor, and similar circuit components.

    摘要翻译: 制造薄膜的方法包括将金属有机前体提供到基底上,其中将金属有机前体加热至约60℃至约95℃的温度,并具有约1托至约 5乇 将包含用于氧化金属有机前体的氧的氧化剂提供到基底上。 金属有机前体和氧化剂在化学上反应以形成包括金属氧化物的薄膜。 该薄膜可容易地用于栅极结构的栅极绝缘层,电容器的介电层和类似的电路部件。