Polishing slurry, method of producing same, and method of polishing substrate
    1.
    发明申请
    Polishing slurry, method of producing same, and method of polishing substrate 审中-公开
    抛光浆料,其制造方法以及抛光底物的方法

    公开(公告)号:US20060032149A1

    公开(公告)日:2006-02-16

    申请号:US11193094

    申请日:2005-07-28

    IPC分类号: C09K3/14 B24D3/02 C09C1/68

    摘要: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

    摘要翻译: 公开了一种抛光浆料,特别是用于化学机械抛光的浆料,其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说,本发明提供一种制备浆料的方法,该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中,对用作阻挡膜的氮化物层具有高的去除选择性( 设计规则为0.13μm以下),并且减少了在平坦化表面上的划痕的发生,以及使用其抛光衬底的方法。

    Slurry for CMP and method of polishing substrate using same
    2.
    发明申请
    Slurry for CMP and method of polishing substrate using same 有权
    用于CMP的浆料和使用其的抛光衬底的方法

    公开(公告)号:US20050252092A1

    公开(公告)日:2005-11-17

    申请号:US11127441

    申请日:2005-05-11

    摘要: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.

    摘要翻译: 本文公开了抛光浆料及其制备方法。 抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性,该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的 ,例如,0.13mum以下的设计规则。 用于预处理抛光颗粒的方法和装置,分散装置和操作分散装置的方法,添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能 纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺,特别是STI工艺。

    Polishing slurry, method of producing same, and method of polishing substrate
    3.
    发明申请
    Polishing slurry, method of producing same, and method of polishing substrate 有权
    抛光浆料,其制造方法以及抛光底物的方法

    公开(公告)号:US20050198912A1

    公开(公告)日:2005-09-15

    申请号:US11078538

    申请日:2005-03-11

    IPC分类号: B24D3/02 C08J3/14 H01L21/304

    摘要: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

    摘要翻译: 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒,其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料,其中抛光粒度被控制,并且通过改变浆料的生产条件,可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法,其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕,以及抛光基材的方法。

    3D VEHICLE SIMULATOR SYSTEM AND SIMULATION METHOD FOR ECU EMBEDDED SYSTEM
    4.
    发明申请
    3D VEHICLE SIMULATOR SYSTEM AND SIMULATION METHOD FOR ECU EMBEDDED SYSTEM 有权
    三维车辆仿真系统及ECU嵌入式系统仿真方法

    公开(公告)号:US20070287135A1

    公开(公告)日:2007-12-13

    申请号:US11674845

    申请日:2007-02-14

    IPC分类号: G09B9/02

    CPC分类号: G09B9/04

    摘要: Disclosed is a 3D vehicle simulator system for an ECU embedded system comprising an external input apparatus 130, to which signals of one or more external sensors are inputted, an ECU embedded system 120 for processing and executing signals inputted form the external input apparatus 130, an external output apparatus 140 for receiving and outputting the output signals of the ECU embedding system 120, a vehicle simulator 110 for calculating at real time the signals inputted from the ECU embedded system 120, and for 3D-modeling and outputting the status of the vehicle, and a display 150 for displaying the 3D-modeled vehicle outputted form the vehicle simulator 110.

    摘要翻译: 公开了一种用于ECU嵌入式系统的3D车辆模拟器系统,其包括输入一个或多个外部传感器的信号的外部输入装置130,用于处理和执行从外部输入装置130输入的信号的ECU嵌入式系统120, 用于接收和输出ECU嵌入系统120的输出信号的外部输出装置140,用于实时计算从ECU嵌入式系统120输入的信号以及3D建模和输出车辆状态的车辆模拟器110, 以及显示器150,用于显示从车辆模拟器110输出的3D建模车辆。

    Band-notched spiral antenna
    7.
    发明授权

    公开(公告)号:US09917356B2

    公开(公告)日:2018-03-13

    申请号:US14027132

    申请日:2013-09-13

    申请人: Jae Jeon John Chang

    发明人: Jae Jeon John Chang

    IPC分类号: H01Q1/36

    CPC分类号: H01Q1/36

    摘要: A band-notched spiral antenna having one or more spiral arms extending from a radially inner end to a radially outer end for transmitting or receiving electromagnetic radiation over a frequency range, and one or more resonance structures positioned adjacent one or more segments of the spiral arm associated with a notch frequency band or bands of the frequency range so as to resonate and suppress the transmission or reception of electromagnetic radiation over said notch frequency band or bands.

    BAND-NOTCHED SPIRAL ANTENNA
    8.
    发明申请
    BAND-NOTCHED SPIRAL ANTENNA 有权
    带状螺旋天线

    公开(公告)号:US20150077308A1

    公开(公告)日:2015-03-19

    申请号:US14027132

    申请日:2013-09-13

    申请人: Jae Jeon John Chang

    发明人: Jae Jeon John Chang

    IPC分类号: H01Q1/36

    CPC分类号: H01Q1/36

    摘要: A band-notched spiral antenna having one or more spiral arms extending from a radially inner end to a radially outer end for transmitting or receiving electromagnetic radiation over a frequency range, and one or more resonance structures positioned adjacent one or more segments of the spiral arm associated with a notch frequency band or bands of the frequency range so as to resonate and suppress the transmission or reception of electromagnetic radiation over said notch frequency band or bands.

    摘要翻译: 带状缺口螺旋天线,其具有从径向内端延伸到径向外端的一个或多个螺旋臂,用于在频率范围上传送或接收电磁辐射;以及一个或多个谐振结构,其位于螺旋臂的一个或多个段附近 与频率范围的陷波频带或频带相关联,以便共振并抑制在所述陷波频带或频带上的电磁辐射的发射或接收。

    PNA monomer and precursor
    10.
    发明申请
    PNA monomer and precursor 有权
    PNA单体和前体

    公开(公告)号:US20050250786A1

    公开(公告)日:2005-11-10

    申请号:US11183025

    申请日:2005-07-15

    摘要: This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R′; J is sulfur or oxygen; R′, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrite, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural α-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

    摘要翻译: 本申请涉及用于制备PNA(肽核酸)寡聚体的通式(I)的单体,并提供合成预定义的序列PNA寡聚体和随机序列PNA寡聚体的方法:其中E为氮或C-R' ; J为硫或氧; R',R 1,R 2,R 3,R 4独立地为H,卤素,烷基,硝基,亚硝酸根,烷氧基,卤代烷基,卤代烷氧基,苯基或卤代苯基,R 5为H或保护或未保护的天然或非天然α- 氨基酸; 并且B是天然或非天然核碱基,其中当所述核碱基具有环外氨基功能时,所述功能受到在硫醇存在下对酸不稳定但对弱至中碱稳定的保护基保护。