-
1.发明申请Polishing slurry, method of producing same, and method of polishing substrate 有权抛光浆料，其制造方法以及抛光底物的方法公开(公告)号：US20050198912A1
公开(公告)日：2005-09-15
申请号：US11078538
申请日：2005-03-11
IPC分类号： B24D3/02 , C08J3/14 , H01L21/304
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.
摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。
-
公开(公告)号：US20050252092A1
公开(公告)日：2005-11-17
申请号：US11127441
申请日：2005-05-11
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.
摘要翻译： 本文公开了抛光浆料及其制备方法。 抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性，该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的 ，例如，0.13mum以下的设计规则。 用于预处理抛光颗粒的方法和装置，分散装置和操作分散装置的方法，添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能 纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺，特别是STI工艺。
-
3.发明申请Polishing slurry, method of producing same, and method of polishing substrate 审中-公开抛光浆料，其制造方法以及抛光底物的方法公开(公告)号：US20060032149A1
公开(公告)日：2006-02-16
申请号：US11193094
申请日：2005-07-28
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译： 公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（ 设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。
-
公开(公告)号：US20060156635A1
公开(公告)日：2006-07-20
申请号：US11305535
申请日：2005-12-16
IPC分类号： C09K3/14
CPC分类号： C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
摘要翻译： 本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有 与氮化物相比，氧化物的去除选择性优异。 研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生 微划痕，可以放心。
-
5.发明申请CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same 有权CMP浆料，其制备方法和使用其的抛光基材的方法公开(公告)号：US20070075291A1
公开(公告)日：2007-04-05
申请号：US11421965
申请日：2006-06-02
IPC分类号： C09K13/00 , C03C15/00 , H01L21/461 , B44C1/22 , C23F1/00
CPC分类号： C23F3/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/3212
摘要： A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
摘要翻译： 提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。 另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。 抛光颗粒可以使用溶胶 - 凝胶法合成。 根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。
-
6.发明申请Micro column electron beam apparatus formed in low temperature co-fired ceramic substrate 失效微柱电子束装置形成于低温共烧陶瓷基片中公开(公告)号：US20060131752A1
公开(公告)日：2006-06-22
申请号：US11260025
申请日：2005-10-24
IPC分类号： H01L23/52
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/1477 , H01J2237/03 , H01J2237/1205
摘要： A micro column electron beam apparatus having a reduced number of interconnections is provided. The micro column electron beam apparatus includes: a low temperature co-fired ceramic (LTCC) substrate; a plurality of deflector electrodes attached to a predetermined top portion of the LTCC substrate; a pad electrode placed at a top edge of the LTCC substrate and transmitting an external signal to the deflector electrodes; and a connection unit placed in the LTCC substrate and electrically connecting the deflector electrode and the pad electrode.
摘要翻译： 提供了具有减少数量的互连的微型列电子束装置。 微柱电子束装置包括：低温共烧陶瓷（LTCC）基板; 多个偏转器电极，附着到LTCC衬底的预定顶部; 放置在LTCC衬底的顶部边缘处并将外部信号传输到偏转器电极的焊盘电极; 以及连接单元，其放置在LTCC基板中并电连接偏转器电极和焊盘电极。
-
公开(公告)号：US20060131698A1
公开(公告)日：2006-06-22
申请号：US11259959
申请日：2005-10-24
IPC分类号： H01L23/544
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J2237/0492 , H01J2237/1205 , H01J2237/1518
摘要： Provided is a wafer-scale microcolumn array using a low temperature co-fired ceramic (LTCC) substrate. The microcolumn array includes a LTCC substrate having wirings and wafer-scale beam deflector arrays, which are attached to at least one side of the LTCC substrate and has an array of deflection devices deflecting electron beams. The wafer-scale microcolumn array using the LTCC substrate makes it possible to significantly increase the throughput of semiconductor wafers, simplify its manufacturing process, and lower its production cost.
-
8.发明申请Extractor for an microcolumn, an alignment method for an extractor aperture to an electron emitter, and a measuring method and an alignment method using thereof 有权用于微柱的提取器，用于提取器孔到电子发射器的对准方法，以及使用其的测量方法和对准方法公开(公告)号：US20060071175A1
公开(公告)日：2006-04-06
申请号：US10538284
申请日：2003-12-30
IPC分类号： H01J3/14
CPC分类号： H01J3/028 , H01J3/10 , H01J37/067 , H01J37/15 , H01J2237/1205 , H01J2237/1501 , H01J2237/1502 , H01J2237/24465 , H01J2237/24507
摘要： The present invention provides a new extractor for a micro-column and an alignment method of the aperture of the extractor and an electron emitter for a micro-column. Further, the present invention provides a measuring system, a method for measuring, and an alignment method using the principle of the alignment.
摘要翻译： 本发明提供了用于微柱的新提取器和提取器的孔径和用于微柱的电子发射器的对准方法。 此外，本发明提供了使用对准原理的测量系统，测量方法和对准方法。
-
公开(公告)号：US20060151716A1
公开(公告)日：2006-07-13
申请号：US11257244
申请日：2005-10-24
IPC分类号： G21G5/00
CPC分类号： H01J37/067 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/1205 , H01J2237/1502 , H01J2237/2818
摘要： Provided is a micro-column electron beam apparatus including: a base; an electron lens bracket on which an electron lens modulate can be fixed, mounted in a central portion of the base; an electron beam source tip module vertically disposed on the electron lens module; a pan spring plate stage module that is mounted over the base, supports the electron beam source tip module at a central portion thereof, and includes a three-coupling pan spring plate portion including first through third spring units that are coupled to the electron beam source tip module in three directions on a plane perpendicular to the vertical axis, which vertically passes the center of the electron beam source tip module, to elastically support the electron beam source tip module in three directions; a first piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a first axis perpendicular to the vertical axis; and a second piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a second axis perpendicular to the vertical axis and the first axis.
摘要翻译： 本发明提供一种微柱电子束装置，包括：基底; 可以固定电子透镜调制的电子透镜支架，安装在基座的中心部分; 垂直设置在电子透镜模块上的电子束源头模块; 安装在基座上方的平板弹簧板台模块在其中心部分处支撑电子束源头模块，并且包括三联盘盘弹簧板部分，其包括耦合到电子束源的第一至第三弹簧单元 尖端模块在垂直于垂直轴线的平面上垂直通过电子束源头模块的中心，在三个方向弹性支撑电子束源头模块; 第一压电致动器，其联接到所述盘簧板模块以沿着垂直于所述垂直轴线的第一轴线移动所述电子束源尖端模块; 以及耦合到盘簧级模块的第二压电致动器，用于沿垂直于垂直轴线和第一轴线的第二轴线移动电子束源尖端模块。
-
公开(公告)号：US20060131996A1
公开(公告)日：2006-06-22
申请号：US11231471
申请日：2005-09-20
IPC分类号： H02N2/00
CPC分类号： H02N2/028 , H01J2237/20264
摘要： Provided is a micro stage comprising: a body having a vertically perforated through-hole passing through a central portion thereof; a bobbin including a tip portion with an electron emission tip embedded in the center thereof, and passing through the through-hole of the body to be moved in the through-hole along a first axis perpendicular to a vertical direction; a first piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in one direction along the first axis; a second piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in the other direction along the first axis; and an upper cover that is coupled to an upper portion of the body and has a through-hole, through which the bobbin passes and communicates with the through-hole of the body, wherein the bobbin can be positioned as desired along the first axis by adjusting the voltages applied to the first piezoelectric element and the second piezoelectric element. Accordingly, the emission tip can be exactly and stably positioned using only the movable piezoelectric elements.
摘要翻译： 提供了一种微型台，包括：主体，其具有穿过其中心部分的垂直穿孔的通孔; 线轴，其包括具有嵌入其中心的电子发射尖端的尖端部分，并沿着垂直于垂直方向的第一轴线穿过所述通孔的待通孔; 第一压电元件，其设置在所述主体上，并且当施加电压时被延长以沿着所述第一轴线沿一个方向推动所述线轴; 第二压电元件，其设置在所述主体上并且当施加电压时被延长以沿着所述第一轴线沿另一方向推动所述线轴; 以及上盖，其联接到所述主体的上部并且具有通孔，所述筒管通过所述通孔，所述通孔与所述主体的所述通孔连通，其中所述线轴可根据需要沿着所述第一轴由 调整施加到第一压电元件和第二压电元件的电压。 因此，可以仅使用可动压电元件来精确且稳定地定位发射尖端。
-
-
-
-
-
-
-
-
-
搜索结果
112 条记录 (耗时 0.042 秒)