公开(公告)号：US20090323750A1

公开(公告)日：2009-12-31

申请号：US12492808

申请日：2009-06-26

申请人： Daijiro Inoue ,  Kiyoshi Oota ,  Yoshiki Murayama ,  Ryoji Hiroyama ,  Hiroki Ohbo ,  Seiichi Tokunaga

发明人： Daijiro Inoue ,  Kiyoshi Oota ,  Yoshiki Murayama ,  Ryoji Hiroyama ,  Hiroki Ohbo ,  Seiichi Tokunaga

IPC分类号： H01S5/00 ,  H01L21/00 ,  H01S5/028

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.

摘要翻译： 半导体激光装置包括具有发光层并在发光层附近的半导体层上形成有电流路径的半导体器件层，形成在电流路径附近的电流阻挡层，以及散热层 形成为至少设置在形成有半导体器件层的空腔面的区域附近，并且位于电流路径上方，并且具有比当前阻挡层的导热性更大的导热性。

公开(公告)号：US20070274359A1

公开(公告)日：2007-11-29

申请号：US11878331

申请日：2007-07-24

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L24/83 ,  H01L2224/83192 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34326

摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

公开(公告)号：US07260130B2

公开(公告)日：2007-08-21

申请号：US10811137

申请日：2004-03-29

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L24/83 ,  H01L2224/83192 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34326

摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

摘要翻译： 得到能够提高散热性，简化制造工序，提高制造成品率的半导体激光装置。 该半导体激光器件包括形成在发射层上同时构成凸脊部分的半导体层，由形成为至少覆盖脊部的侧表面的半导体构成的电流阻挡层，形成为接触的第一金属电极 脊部的上表面和从脊部以规定间隔配置在脊部两侧的凸状支撑部。

公开(公告)号：US07903709B2

公开(公告)日：2011-03-08

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20090185594A1

公开(公告)日：2009-07-23

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/026 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US06778575B2

公开(公告)日：2004-08-17

申请号：US10100920

申请日：2002-03-20

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

IPC分类号： G01R2302

CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。

公开(公告)号：US06771676B2

公开(公告)日：2004-08-03

申请号：US10234250

申请日：2002-09-05

申请人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S304

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333

摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

摘要翻译： 通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。

公开(公告)号：US06768755B2

公开(公告)日：2004-07-27

申请号：US09746065

申请日：2000-12-26

申请人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

发明人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06226 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227

摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

摘要翻译： 在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。 低载流子浓度层的载流子浓度比n型电流阻挡层低。 耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。 或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层 相反的导电类型和另一个p型接触层。

公开(公告)号：US08193016B2

公开(公告)日：2012-06-05

申请号：US12985632

申请日：2011-01-06

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20110104839A1

公开(公告)日：2011-05-05

申请号：US12985632

申请日：2011-01-06

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。