Condenser optic with sacrificial reflective surface
    1.
    发明授权
    Condenser optic with sacrificial reflective surface 有权
    冷凝器光学元件具有牺牲反射面

    公开(公告)号:US07239443B2

    公开(公告)日:2007-07-03

    申请号:US11479340

    申请日:2006-06-30

    摘要: Employing collector optics that has a sacrificial reflective surface can significantly prolong the useful life of the collector optics and the overall performance of the condenser in which the collector optics are incorporated. The collector optics is normally subject to erosion by debris from laser plasma source of radiation. The presence of an upper sacrificial reflective surface over the underlying reflective surface effectively increases the life of the optics while relaxing the constraints on the radiation source. Spatial and temporally varying reflectivity that results from the use of the sacrificial reflective surface can be accommodated by proper condenser design.

    摘要翻译: 使用具有牺牲反射表面的收集​​器光学器件可以显着延长收集器光学器件的使用寿命以及其中结合有收集器光学器件的冷凝器的整体性能。 收集器光学器件通常受到来自激光等离子体辐射源的碎片的侵蚀。 在下面的反射表面上存在上牺牲反射表面有效地增加了光学元件的寿命,同时放松了对辐射源的约束。 通过使用牺牲反射表面产生的空间和时间变化的反射率可以通过适当的冷凝器设计来适应。

    Condenser optic with sacrificial reflective surface
    2.
    发明授权
    Condenser optic with sacrificial reflective surface 有权
    冷凝器光学元件具有牺牲反射面

    公开(公告)号:US07081992B2

    公开(公告)日:2006-07-25

    申请号:US10760118

    申请日:2004-01-16

    摘要: Employing collector optics that have a sacrificial reflective surface can significantly prolong the useful life of the collector optics and the overall performance of the condenser in which the collector optics are incorporated. The collector optics are normally subject to erosion by debris from laser plasma source of radiation. The presence of an upper sacrificial reflective surface over the underlying reflective surface effectively increases the life of the optics while relaxing the constraints on the radiation source. Spatial and temporally varying reflectivity that results from the use of the sacrificial reflective surface can be accommodated by proper condenser design.

    摘要翻译: 使用具有牺牲反射表面的收集​​器光学器件可以显着延长收集器光学器件的使用寿命以及其中结合有集光器的冷凝器的整体性能。 收集器光学器件通常受到来自激光等离子体辐射源的碎片的侵蚀。 在下面的反射表面上存在上牺牲反射表面有效地增加了光学元件的寿命,同时放松了对辐射源的约束。 通过使用牺牲反射表面产生的空间和时间变化的反射率可以通过适当的冷凝器设计来适应。

    Extreme ultraviolet lithography machine
    3.
    发明授权
    Extreme ultraviolet lithography machine 有权
    极紫外光刻机

    公开(公告)号:US6031598A

    公开(公告)日:2000-02-29

    申请号:US161353

    申请日:1998-09-25

    IPC分类号: G03F7/20 G03B27/54 G03B27/74

    摘要: An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

    摘要翻译: 用于制造在基板上形成的诸如晶体管的集成电路(IC)部件的极紫外光刻(EUVL)机器或系统。 EUVL机器使用经由光学装置引导的激光等离子体点源到由多镜系统反射到衬底或靶上的掩模或掩模版上。 EUVL机器在10-14nm波长的软x射线光子中工作。 基本上,EUV机器包括抽真空的源室,通过传送管装置互连的抽真空的主或投影室,其中激光束被引导到等离子体发生器中,该等离子体发生器产生照明光束,该照明光束由来自光源室的光学器件通过连接 管,投射到投影室中并且到达掩模版或掩模上,图案化的光束在安装在主或投影室中的投影光学器件(PO)盒中的光学器件反射到基板上。 在EUVL机的一个实施例中,利用了九个光学部件,其中四个光学部件位于PO盒中。 主或投影室包括用于PO箱的隔振器和用于衬底的隔振器安装件,其中主或投影室安装在支撑结构上并被隔离。

    Mask-to-wafer alignment system
    4.
    发明授权

    公开(公告)号:US06642995B2

    公开(公告)日:2003-11-04

    申请号:US09986006

    申请日:2001-11-07

    IPC分类号: G03B2772

    CPC分类号: G03F9/7088 G02B27/143

    摘要: A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

    Optical double-slit particle measuring system
    6.
    发明授权
    Optical double-slit particle measuring system 失效
    光学双缝粒子测量系统

    公开(公告)号:US4441816A

    公开(公告)日:1984-04-10

    申请号:US361954

    申请日:1982-03-25

    IPC分类号: G01N15/02

    CPC分类号: G01N15/0205

    摘要: A method for in situ measurement of particle size is described. The size information is obtained by scanning an image of the particle across a double-slit mask and observing the transmitted light. This method is useful when the particle size of primary interest is 3 .mu.m and larger. The technique is well suited to applications in which the particles are non-spherical and have unknown refractive index. It is particularly well suited to high temperature environments in which the particle incandescence provides the light source.

    摘要翻译: 描述了用于粒度的原位测量的方法。 通过在双缝隙掩模上扫描粒子的图像并观察透射光获得尺寸信息。 当主要兴趣的粒度为3μm以上时,该方法是有用的。 该技术非常适合于其中颗粒是非球形并且具有未知折射率的应用。 它特别适用于粒子白炽灯提供光源的高温环境。

    Compensation of flare-induced CD changes EUVL
    7.
    发明授权
    Compensation of flare-induced CD changes EUVL 有权
    火炬引起的CD变化的补偿EUVL

    公开(公告)号:US06815129B1

    公开(公告)日:2004-11-09

    申请号:US09669958

    申请日:2000-09-26

    IPC分类号: G03F900

    摘要: A method for compensating for flare-induced critical dimensions (CD) changes in photolithography. Changes in the flare level results in undesirable CD changes. The method when used in extreme ultraviolet (EUV) lithography essentially eliminates the unwanted CD changes. The method is based on the recognition that the intrinsic level of flare for an EUV camera (the flare level for an isolated sub-resolution opaque dot in a bright field mask) is essentially constant over the image field. The method involves calculating the flare and its variation over the area of a patterned mask that will be imaged and then using mask biasing to largely eliminate the CD variations that the flare and its variations would otherwise cause. This method would be difficult to apply to optical or DUV lithography since the intrinsic flare for those lithographies is not constant over the image field.

    摘要翻译: 用于补偿光刻中闪耀引起的临界尺寸(CD)变化的方法。 闪光水平的变化导致不良CD变化。 当用于极紫外(EUV)光刻技术时,该方法基本上消除了不必要的CD变化。 该方法基于这样的认识:对于EUV摄像机(对于明场掩模中的隔离的子分辨率不透明点的闪光级别)的本征水平在图像场上基本上是恒定的。 该方法包括计算闪耀及其在将被成像的图案化掩模的面积上的变化,然后使用掩模偏置来大大消除闪光及其变化否则将导致的CD变化。 这种方法将难以应用于光学或DUV光刻,因为用于这些平版印刷的本征闪光在图像场上不是恒定的。

    Projection lithography with distortion compensation using reticle chuck contouring
    8.
    发明授权
    Projection lithography with distortion compensation using reticle chuck contouring 有权
    投影光刻与畸变补偿使用光罩卡盘轮廓

    公开(公告)号:US06229871B1

    公开(公告)日:2001-05-08

    申请号:US09357613

    申请日:1999-07-20

    IPC分类号: G21K500

    摘要: A chuck for holding a reflective reticle where the chuck has an insulator block with a non-planer surface contoured to cause distortion correction of EUV radiation is provided. Upon being placed on the chuck, a thin, pliable reflective reticle will conform to the contour of the chuck's non-planer surface. When employed in a scanning photolithography system, distortion in the scanned direction is corrected.

    摘要翻译: 提供了用于保持反射掩模版的卡盘,其中卡盘具有非平面表面的绝缘体块,以形成EUV辐射的畸变校正。 放置在卡盘上时,薄的柔韧的反光标线将符合卡盘非平面表面的轮廓。 当用于扫描光刻系统时,校正扫描方向的失真。