利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

74 条记录 (耗时 0.059 秒)

    Crackstop with release layer for crack control in semiconductors
    8.
    发明授权
    Crackstop with release layer for crack control in semiconductors 失效
    具有半导体裂纹控制释放层的裂纹

    公开(公告)号：US07109093B2

    公开(公告)日：2006-09-19

    申请号：US10708735

    申请日：2004-03-22

    申请人： John A. Fitzsimmons ,  Michael W. Lane ,  Vincent J. McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper

    发明人： John A. Fitzsimmons ,  Michael W. Lane ,  Vincent J. McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper

    IPC分类号： H01L21/76 ,  H01L21/82

    CPC分类号： H01L23/562 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of forming and the integrated circuit device structure formed having vertical interfaces adjacent an existing crack stop around a perimeter of a chip, whereby the vertical interface controls cracks generated during side processing of the device such as dicing, and in service from penetrating the crack stop. The vertical interface is comprised of a material that prevents cracks from damaging the crack stop by deflecting cracks away from penetrating the crack stop, or by absorbing the generated crack energies. Alternatively, the vertical interface may be a material that allows advancing cracks to lose enough energy such that they become incapable of penetrating the crack stop. The present vertical interfaces can be implemented in a number of ways such as, vertical spacers of release material, vertical trenches of release material or vertical channels of the release material.

    摘要翻译： 形成方法和集成电路器件结构形成，具有与现有裂纹相邻的垂直接口围绕芯片的周边，由此垂直接口控制器件的侧面处理期间产生的裂纹，例如切割，并且在穿透裂缝停止 。 垂直界面由防止裂纹破坏裂纹的材料组成，通过使裂纹偏离穿透裂缝，或通过吸收所产生的裂纹能量来防止裂纹破裂。 或者，垂直界面可以是允许前进裂纹失去足够的能量使得它们不能穿透裂缝停止的材料。 现有的垂直接口可以以多种方式实现，例如释放材料的垂直间隔物，释放材料的垂直沟槽或释放材料的垂直通道。

    Process for interfacial adhesion in laminate structures through patterned roughing of a surface
    9.
    发明授权
    Process for interfacial adhesion in laminate structures through patterned roughing of a surface 有权
    通过图案化粗糙化表面的层压结构中的界面粘合方法

    公开(公告)号：US07972965B2

    公开(公告)日：2011-07-05

    申请号：US11862706

    申请日：2007-09-27

    申请人： Edward C. Cooney, III ,  Vincent McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper ,  Matthew E. Colburn

    发明人： Edward C. Cooney, III ,  Vincent McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper ,  Matthew E. Colburn

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76829 ,  H01L21/31144 ,  H01L21/76828 ,  H01L21/78

    摘要： The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.

    摘要翻译： 本发明涉及使用图案化粗糙化改善电介质的界面粘附的方法。 可以通过增加材料之间的界面的粗糙度来实现层和基底之间的改善的粘附强度。 粗糙度可能包括任何干扰通常平滑的表面，如凹槽，凹痕，孔，沟槽等。 可以通过在衬底的表面上沉积材料作为掩模，然后使用蚀刻工艺来引起粗糙度来实现界面上的粗加工。 用作掩模的材料允许蚀刻在以常规光掩模和光刻实现的规模以下的精细或次微小尺度上发生，以实现所需的图案粗糙化。 然后将另一种材料沉积在基底的粗糙表面上，填充粗加工并粘附到基底上。