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    Microwave power limiter comprising a single-gate FET
    1.
    发明授权
    Microwave power limiter comprising a single-gate FET 失效
    包括单栅极FET的微波功率限制器

    公开(公告)号：US4162412A

    公开(公告)日：1979-07-24

    申请号：US838656

    申请日：1977-10-03

    申请人： Daniel D. Mawhinney ,  Herbert J. Wolkstein ,  Arye Rosen ,  Zygmond Turski

    发明人： Daniel D. Mawhinney ,  Herbert J. Wolkstein ,  Arye Rosen ,  Zygmond Turski

    IPC分类号： H03G11/00 ,  H03G11/04 ,  H04B3/04

    CPC分类号： H03G11/002 ,  H03G11/006

    摘要： A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.

    摘要翻译： 微波功率限制器，用于响应于变化功率电平的输入RF信号而产生基本上恒定的功率电平的输出RF信号包括单栅极场效应晶体管（FET）。 FET被偏压，使得RF功率输出变化与饱和区域中的输入功率变化相比较小。 可以使用多个FET级联级来减小该功率输出变化。 可以在限幅器中采用包括多个FET级联级的小信号放大器，以将功率电平增加到与饱和FET级兼容的增益或驱动电平。

    Microwave frequency discriminator comprising a one port active device
    2.
    发明授权
    Microwave frequency discriminator comprising a one port active device 失效
    微波鉴频器，包括一个端口有源器件

    公开(公告)号：US4085377A

    公开(公告)日：1978-04-18

    申请号：US722829

    申请日：1976-09-13

    申请人： Zygmond Turski ,  Arye Rosen

    发明人： Zygmond Turski ,  Arye Rosen

    IPC分类号： H03D9/04 ,  H03D3/26

    CPC分类号： H03D9/04

    摘要： A microwave frequency discriminator using a one port active device amplifier including a circulator for coupling an input RF signal of substantially constant power level into the amplifier and an output RF signal out from the amplifier. The discriminator further comprises input and output matching networks connected to the circulator and a detector for generating a D.C. signal as a function of the incoming signal frequency. The input and output impedance matching networks are formed to provide selected impedance conditions to the amplifier such that the power-frequency response of the amplifier varies substantially linearly approximating a frequency discriminator characteristic throughout a predetermined frequency bandwidth.

    摘要翻译： 一种使用单端口有源器件放大器的微波鉴频器，其包括用于将基本上恒定功率电平的输入RF信号耦合到放大器的环行器和从放大器输出的输出RF信号。 鉴别器还包括连接到环行器的输入和输出匹配网络以及用于根据输入信号频率产生直流信号的检测器。 形成输入和输出阻抗匹配网络以向放大器提供所选择的阻抗条件，使得放大器的功率 - 频率响应在整个预定频率带宽内基本上线性近似于鉴频器特性。

    Microwave power limiter comprising a dual-gate FET
    3.
    发明授权
    Microwave power limiter comprising a dual-gate FET 失效
    微波功率限制器包括双栅极FET

    公开(公告)号：US4167681A

    公开(公告)日：1979-09-11

    申请号：US838720

    申请日：1977-10-03

    申请人： Herbert J. Wolkstein ,  Arye Rosen ,  Jitendra Goel

    发明人： Herbert J. Wolkstein ,  Arye Rosen ,  Jitendra Goel

    IPC分类号： H03G7/00 ,  H03G11/00 ,  H03G11/04 ,  H04B3/04

    CPC分类号： H03G11/006 ,  H03G7/00

    摘要： A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a dual gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.

    摘要翻译： 微波功率限制器，用于响应于变化功率电平的输入RF信号而产生基本上恒定功率电平的输出RF信号，包括双栅场效应晶体管（FET）。 FET被偏压，使得RF功率输出变化与饱和区域中的输入功率变化相比较小。 可以使用多个FET级联级来减小该功率输出变化。 可以在限幅器中采用包括多个FET级联级的小信号放大器，以将功率电平增加到与饱和FET级兼容的增益或驱动电平。

    Method for fabricating a low loss varactor diode
    5.
    发明授权
    Method for fabricating a low loss varactor diode 失效
    低损耗变容二极管的制造方法

    公开(公告)号：US4381952A

    公开(公告)日：1983-05-03

    申请号：US262621

    申请日：1981-05-11

    申请人： Arye Rosen

    发明人： Arye Rosen

    IPC分类号： H01L21/265 ,  H01L21/306 ,  H01L29/93 ,  H01L21/263 ,  H01L21/203 ,  H01L21/22

    CPC分类号： H01L29/93 ,  H01L21/26513 ,  H01L21/30604

    摘要： A low conductivity, first conductivity type epitaxial layer is formed on a substrate of high conductivity, first conductivity type semiconductor material. Conductivity modifiers of second conductivity type are then implanted into the epitaxial layer so as to create a PN junction in the epitaxial layer. The substrate is next thinned, and conductivity modifiers of first conductivity type are implanted into the thinned surface so as to form a very high conductivity layer at the thinned surface.

    摘要翻译： 在高导电率的第一导电型半导体材料的基板上形成低导电率的第一导电型外延层。 然后将第二导电类型的电导率调节剂注入到外延层中，以在外延层中产生PN结。 接下来，将衬底细化，并将第一导电类型的导电性改性剂注入到薄化表面中，以在薄化表面形成非常高的导电性层。

    Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
    6.
    发明授权
    Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal 失效
    利用外延沉积，离子注入和衬底去除的组合制造二极管二极管的方法

    公开(公告)号：US4230505A

    公开(公告)日：1980-10-28

    申请号：US82733

    申请日：1979-10-09

    申请人： Chung P. Wu ,  Arye Rosen

    发明人： Chung P. Wu ,  Arye Rosen

    IPC分类号： H01L21/265 ,  H01L21/268 ,  H01L21/306 ,  H01L29/864 ,  H01L21/20 ,  H01L21/324

    CPC分类号： H01L21/30604 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/864 ,  Y10S148/061 ,  Y10S148/09 ,  Y10S148/092 ,  Y10S148/093 ,  Y10S438/928

    摘要： A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.

    摘要翻译： 一种制造能够在毫米波频率下操作的Impatt二极管的方法，其中将二极管所需厚度的外延层沉积在衬底上。 将导电性改性剂注入到外延层中以在一个有源区和外延层的表面之间形成一个有源区和高导电性区。 在外延层上形成也用作手柄的散热器。 去除衬底，并且将导电性改性剂注入外延层的另一侧到另一个有源区，并且将另一个有源区和另一个外延层的另一表面之间的高导电性区域注入。 在植入物外延层退火之后。 在第一种植入物之后，外延层可以通过热或激光退火进行退火。 然而，在第二次注入之后，外延层必须被激光退火。