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公开(公告)号：US4167681A
公开(公告)日：1979-09-11
申请号：US838720
申请日：1977-10-03
申请人： Herbert J. Wolkstein , Arye Rosen , Jitendra Goel
发明人： Herbert J. Wolkstein , Arye Rosen , Jitendra Goel
CPC分类号： H03G11/006 , H03G7/00
摘要： A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a dual gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.
摘要翻译： 微波功率限制器，用于响应于变化功率电平的输入RF信号而产生基本上恒定功率电平的输出RF信号，包括双栅场效应晶体管（FET）。 FET被偏压，使得RF功率输出变化与饱和区域中的输入功率变化相比较小。 可以使用多个FET级联级来减小该功率输出变化。 可以在限幅器中采用包括多个FET级联级的小信号放大器，以将功率电平增加到与饱和FET级兼容的增益或驱动电平。
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2.发明授权
公开(公告)号：US4243951A
公开(公告)日：1981-01-06
申请号：US914902
申请日：1978-06-12
CPC分类号： H01S5/042
摘要： An injection laser modulator comprises a self-biased field-effect transistor (FET) and an injection laser to provide a quiescent state during which lasing of the injection laser occurs in response to a high repetition rate signal of pulse coded modulation (PCM). The modulator is d.c. coupled to an input pulse source of PCM rendering it compatible with an input pulse referenced to ground and not being subject to voltage level shifting of the input pulse.The modulator circuit in its preferred and alternate embodiments provides various arrangements for high impedance input and low impedance output matching. In addition, means are provided for adjusting the bias of the FET as well as the bias of the injection laser.
摘要翻译： 注入激光调制器包括自偏置场效应晶体管（FET）和注入激光器，以提供静止状态，在该状态期间，响应于脉冲编码调制（PCM）的高重复率信号而发生注入激光的激光。 调制器是直流 耦合到PCM的输入脉冲源，使其与与地面相关的输入脉冲兼容，并且不受输入脉冲的电压电平偏移。 其优选和替代实施例中的调制器电路提供用于高阻抗输入和低阻抗输出匹配的各种布置。 另外，提供了用于调节FET的偏置以及注入激光器的偏压的装置。
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公开(公告)号：US4207538A
公开(公告)日：1980-06-10
申请号：US938267
申请日：1978-08-29
申请人： Jitendra Goel
发明人： Jitendra Goel
CPC分类号： H03F1/306
摘要： A positive temperature coefficient resistance element such as a sensistor and a negative coefficient resistance element such as a thermistor are arranged in a potential divider network, the output terminal of which produces a potential which is a function of temperature. The potential is applied as a bias potential to the control electrode of an amplifier circuit subject to variations in gain as a function of both control electrode voltage and temperature to reduce the gain, as a function of temperature, of the amplifier.
摘要翻译： 正温度系数电阻元件如感温电阻和负系数电阻元件如热敏电阻被布置在分压网络中，其输出端产生作为温度函数的电位。 将电位作为偏置电位施加到放大器电路的控制电极，受到增益的变化作为控制电极电压和温度两者的函数，以减小作为放大器的温度的函数的增益。
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公开(公告)号：US4145459A
公开(公告)日：1979-03-20
申请号：US874701
申请日：1978-02-02
申请人： Jitendra Goel
发明人： Jitendra Goel
IPC分类号： H01L21/285 , H01L21/338 , H01L29/423 , H01L29/812 , H01L21/28 , H01L21/302
CPC分类号： H01L29/66863 , H01L21/28581 , H01L29/42316 , H01L29/8128 , Y10S148/139
摘要： A short gate field effect transistor having a gate on the bottom of a recess in a body of semiconductor material with the source and drain being on the surface of the semiconductor body at opposite sides of the recess is made by providing a metal film on the surface of the semiconductor body with the metal film having an opening therein. A recess is formed in the portion of the semiconductor body in the opening in the metal film. While protecting the bottom portion of the recess, metal films are plated up on each side of the recess until the spacing between the metal films across the recess is equal to the desired length of the gate. The gate is then deposited on the bottom of the recess using the plated metal films as a mask to control the length of the gate.
摘要翻译： 半导体材料体的凹部的底部具有栅极的短栅极场效应晶体管，源极和漏极在凹槽的相对侧处在半导体主体的表面上，在表面上设置金属膜， 的半导体本体具有在其中具有开口的金属膜。 在半导体本体的金属膜的开口部分形成凹部。 在保护凹部的底部的同时，金属膜在凹槽的每一侧被镀覆，直到穿过凹槽的金属膜之间的间隔等于栅极的期望长度。 然后使用电镀金属膜作为掩模将栅极沉积在凹槽的底部上，以控制栅极的长度。
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公开(公告)号：US4194285A
公开(公告)日：1980-03-25
申请号：US915653
申请日：1978-06-15
申请人： Jitendra Goel
发明人： Jitendra Goel
IPC分类号： H01L21/027 , H01L21/338 , H01L29/812 , B01J17/00
CPC分类号： H01L29/66863 , H01L21/0271 , H01L29/8128 , Y10S148/143
摘要： A field effect transistor having a gate on the bottom of a groove in a body of semiconductor material with the source and drain being on a surface at opposite sides of the groove is made by first forming a recess in the surface of the semiconductor body. A metal layer is then coated on the surface of the semiconductor body and on the surfaces of the recess. A layer of a photoresist is then coated over the metal layer. The photoresist is then exposed to a beam of light whose rays extend along a path which is at a very small angle with respect to the surface of the semiconductor body to fully expose a narrow portion of the photoresist layer at one edge of the recess. The fully exposed portion of the photoresist layer is removed to expose a narrow area of the metal layer along the edge of the recess. The exposed portion of the metal layer is then removed and a groove is formed in the portion of the surface of the semiconductor material exposed by removing a portion of the material layer. A metal film is coated on the bottom of the groove to form the gate of the field effect transistor with the metal layer on the bottom of the recess at one side of the groove and the metal layer on the surface of the semiconductor body at the other side of the groove forming the source and drain of the field effect transistor.
摘要翻译： 首先在半导体本体的表面形成凹部，制成半导体材料体的槽底部的源极和漏极位于沟槽相对侧的表面上的栅极效应晶体管。 然后将金属层涂覆在半导体本体的表面上和凹部的表面上。 然后将一层光致抗蚀剂涂覆在金属层上。 然后将光致抗蚀剂暴露于其光线沿着相对于半导体本体的表面以非常小的角度延伸的路径延伸，以在凹部的一个边缘处完全暴露光致抗蚀剂层的窄部分。 去除光致抗蚀剂层的完全曝光部分，以沿着凹部的边缘露出金属层的窄区域。 然后去除金属层的暴露部分，并且通过去除材料层的一部分而暴露在半导体材料的表面的部分中形成凹槽。 金属膜被涂覆在沟槽的底部，以形成场效应晶体管的栅极，金属层位于凹槽一侧的凹槽的底部，另一侧的半导体本体表面上的金属层 侧面形成场效应晶体管的源极和漏极。
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6.发明授权
公开(公告)号：US4183041A
公开(公告)日：1980-01-08
申请号：US919069
申请日：1978-06-26
申请人： Jitendra Goel
发明人： Jitendra Goel
CPC分类号： H01L24/81 , H01L23/142 , H01L23/647 , H01L2224/81801 , H01L2924/01004 , H01L2924/01006 , H01L2924/01033 , H01L2924/01077 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011
摘要： A field effect transistor is mounted in a flip-chip carrier which is in contact with one surface of a metal plate, the other surface of the plate being in contact with one surface of a block of beryllium oxide. A metal sheet, connected to a ground plane, is in contact with the one surface of the block and the surface of the block opposed therefrom. The plate and the sheet have a space therebetween. A film resistor is disposed upon the block in the space.
摘要翻译： 场效应晶体管安装在与金属板的一个表面接触的倒装芯片载体中，该板的另一个表面与氧化铍块的一个表面接触。 连接到接地平面的金属片与块的一个表面和与其相对的块的表面接触。 板和片之间具有间隔。 薄膜电阻器设置在空间中的块上。
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公开(公告)号：US4117301A
公开(公告)日：1978-09-26
申请号：US822540
申请日：1977-08-08
CPC分类号： G03F7/0015 , B23K17/00
摘要： A mask for manufacturing microcircuits is comprised of a substratum and a layer of matter, such as, for example gold, adjacent the substratum. An aperture is located in the layer of matter. The aperture in the layer of matter exhibits a cross-section resembling an inverted isosceles trapezoid. The method for manufacture of the mask comprises the steps of appositioning a patterned layer of photoresist to a layer of gold which is adjacent the substratum. The structure comprising the photoresist, the gold layer and the substratum is exposed to a beam of ions having a preselected kinetic energy such that the ions remove gold exposed by apertures in the photoresist layer. The kinetic energy of the ions is selected such that an aperture is eroded in the layer of gold, the aperture exhibiting an inverted isosceles trapezoidal cross-section.
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