SYSTEM AND METHOD FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM
    1.
    发明申请
    SYSTEM AND METHOD FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM 有权
    用于表示片上电源系统的状态的系统和方法

    公开(公告)号:US20090158092A1

    公开(公告)日:2009-06-18

    申请号:US11958680

    申请日:2007-12-18

    IPC分类号: G06F11/07 G06F11/30

    摘要: The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.

    摘要翻译: 多片式电源系统的状态被指示用于修改芯片测试流程和诊断芯片故障。 接收数字符合性信号,每个合规信号与多个片上电源之一相关联。 每个电源具有相关的合规级别,并且每个合规信号指示其相关联的电源是否以相关联的合规级别运行。 合规信号被转换成指示与电源相关联的符合性信号的状态的电源状态信号。 输出电源状态信号。 如果电源工作在相关的合规级别,则输出电源状态信号表示电源正在通过。 如果电源不在其相关的合规级别运行,则输出电源状态信号表示电源出现故障。 如果电源出现故障,可能会中断内存测试,从而简化了芯片故障诊断。

    System and method for indicating status of an on-chip power supply system
    2.
    发明授权
    System and method for indicating status of an on-chip power supply system 有权
    用于指示片上电源系统状态的系统和方法

    公开(公告)号:US07917806B2

    公开(公告)日:2011-03-29

    申请号:US11958680

    申请日:2007-12-18

    IPC分类号: G06F11/00

    摘要: The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.

    摘要翻译: 多片式电源系统的状态被指示用于修改芯片测试流程和诊断芯片故障。 接收数字符合性信号,每个合规信号与多个片上电源之一相关联。 每个电源具有相关的合规级别,并且每个合规信号指示其相关联的电源是否以相关联的合规级别运行。 合规信号被转换成指示与电源相关联的符合性信号的状态的电源状态信号。 输出电源状态信号。 如果电源工作在相关的合规级别,则输出电源状态信号表示电源正在通过。 如果电源不在其相关的合规级别运行,则输出电源状态信号表示电源出现故障。 如果电源出现故障,可能会中断内存测试,从而简化了芯片故障诊断。

    FUSEBAY CONTROLLER STRUCTURE, SYSTEM, AND METHOD
    3.
    发明申请
    FUSEBAY CONTROLLER STRUCTURE, SYSTEM, AND METHOD 有权
    FUSEBAY控制器结构,系统和方法

    公开(公告)号:US20130042166A1

    公开(公告)日:2013-02-14

    申请号:US13204929

    申请日:2011-08-08

    IPC分类号: H03M13/15 G06F11/10

    摘要: Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.

    摘要翻译: 选择性地将错误校正应用于数据,例如要存储在ASIC或其他半导体器件上的BIST / BISR的保险丝盒中的修复数据。 可以包括重复的位校正和纠错码状态机,并且可以使用诸如多路复用器的选择器来实现一种或两种类型的校正。 每个状态机可以包括当遇到其类型的校正时可以被激活的指示器,例如粘性位。 指示器可用于在包括本发明的实施例的部件的制造测试期间开发质量和产量控制标准。

    Automatic bit fail mapping for embedded memories with clock multipliers
    4.
    发明授权
    Automatic bit fail mapping for embedded memories with clock multipliers 失效
    带有时钟乘法器的嵌入式存储器的自动位失败映射

    公开(公告)号:US07444564B2

    公开(公告)日:2008-10-28

    申请号:US10707071

    申请日:2003-11-19

    IPC分类号: G11C29/00 G01R31/28

    摘要: A bit fail map circuit accurately generates a bit fail map of an embedded memory such as a DRAM by utilizing a high speed multiplied clock generated from a low-speed Automated Test Equipment (ATE) tester. The circuit communicates between the ATE tester, the embedded memory under test, Built-In Self-Test (BIST) and Built-In Redundancy Analysis (BIRA). An accurate bit fail map of an embedded DRAM memory is provided by pausing the BIST test circuitry at a point when a fail is encountered, namely a mismatch between BIST expected data and the actual data read from the array, and then shifting the bit fail data off the chip using the low-speed ATE tester clock. Thereafter, the high-speed test is resumed from point of fail by again running the BIST using the high-speed internal clock, to provide at-speed bit Fail Maps.

    摘要翻译: 位故障映射电路通过利用从低速自动测试设备(ATE)测试器产生的高速倍增时钟,精确地生成诸如DRAM的嵌入式存储器的位故障映射。 该电路在ATE测试仪,被测嵌入式内存,内置自检(BIST)和内置冗余分析(BIRA)之间进行通信。 通过在遇到失败时暂停BIST测试电路,即BIST预期数据与从阵列读取的实际数据之间的不匹配,然后移位位故障数据,提供嵌入式DRAM存储器的精确位故障映射 使用低速ATE测试仪时钟关闭芯片。 此后,通过使用高速内部时钟再次运行BIST,从故障点恢复高速测试,以提供高速位Fail Map。

    Modular DLL architecture for generating multiple timings
    5.
    发明授权
    Modular DLL architecture for generating multiple timings 失效
    用于生成多个时序的模块化DLL体系结构

    公开(公告)号:US06956415B2

    公开(公告)日:2005-10-18

    申请号:US10707067

    申请日:2003-11-19

    摘要: A modular Digital Locked Loop (DLL) architecture capable of generating a plurality of multiple phase clock signals, having particular applicability to synchronization of embedded DRAM systems with on chip timing. The architecture comprises a single core frequency locking circuit that includes a delay element with control logic and locking circuitry capable of locking the DLL system clock frequency to an external reference clock, and a plurality of secondary phase locking circuits capable of synchronizing a plurality of internal clock signals to any phase of the external reference clock.

    摘要翻译: 一种能够产生多个多相时钟信号的模块化数字锁定环(DLL)架构,其特别适用于具有片上定时的嵌入式DRAM系统的同步。 该架构包括单核频率锁定电路,其包括具有控制逻辑的延迟元件和能够将DLL系统时钟频率锁定到外部参考时钟的锁定电路,以及能够使多个内部时钟同步的多个次级锁相电路 信号到外部参考时钟的任何相位。

    Fusebay controller structure, system, and method
    6.
    发明授权
    Fusebay controller structure, system, and method 有权
    Fusebay控制器结构,系统和方法

    公开(公告)号:US08484543B2

    公开(公告)日:2013-07-09

    申请号:US13204929

    申请日:2011-08-08

    IPC分类号: H03M13/00

    摘要: Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.

    摘要翻译: 选择性地将错误校正应用于数据,例如要存储在ASIC或其他半导体器件上的BIST / BISR的保险丝盒中的修复数据。 可以包括重复的位校正和纠错码状态机,并且可以使用诸如多路复用器的选择器来实现一种或两种类型的校正。 每个状态机可以包括诸如“粘性位”的指示符,当其遇到类型的校正时可以被激活。 指示器可用于在包括本发明的实施例的部件的制造测试期间开发质量和产量控制标准。

    STRUCTURE FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM
    7.
    发明申请
    STRUCTURE FOR INDICATING STATUS OF AN ON-CHIP POWER SUPPLY SYSTEM 有权
    表示片上电源系统状态的结构

    公开(公告)号:US20090153172A1

    公开(公告)日:2009-06-18

    申请号:US12114070

    申请日:2008-05-02

    IPC分类号: G01R31/40 G01R31/28

    摘要: A design structure embodied in a machine readable medium used in a design process includes a system for indicating status of an on-chip power supply system with multiple power supplies, having a power system status register for receiving digital compliance signals, each compliance signal associated with one of the multiple power supplies, and having an associated compliance level, wherein each digital compliance signal indicates whether its associated power supply is operating at the associated compliance level, and wherein the power system status register generates a power supply status signal based on the digital compliance signals indicating status of the digital compliance signals; and an output for outputting the power supply status signal, wherein if a power supply is operating at its associated compliance level, the power supply status signal indicates that the power supply is passing, otherwise the power supply status signal indicates that the power supply is failing.

    摘要翻译: 体现在设计过程中使用的机器可读介质中的设计结构包括用于指示具有多个电源的片上电源系统的状态的系统,具有用于接收数字符合性信号的电力系统状态寄存器,与 多个电源中的一个并且具有相关联的合规级别,其中每个数字符合信号指示其相关联的电源是否在相关联的合规级别操作,并且其中电力系统状态寄存器基于数字信号产生电源状态信号 指示数字符合信号状态的符合性信号; 以及用于输出电源状态信号的输出,其中如果电源正在其相关联的顺应性水平下操作,则电源状态信号指示电源正在通过,否则电源状态信号指示电源发生故障 。

    Structure for indicating status of an on-chip power supply system
    8.
    发明授权
    Structure for indicating status of an on-chip power supply system 有权
    用于指示片上电源系统状态的结构

    公开(公告)号:US08028195B2

    公开(公告)日:2011-09-27

    申请号:US12114070

    申请日:2008-05-02

    IPC分类号: G06F11/00

    摘要: A design structure embodied in a machine readable medium used in a design process includes a system for indicating status of an on-chip power supply system with multiple power supplies, having a power system status register for receiving digital compliance signals, each compliance signal associated with one of the multiple power supplies, and having an associated compliance level, wherein each digital compliance signal indicates whether its associated power supply is operating at the associated compliance level, and wherein the power system status register generates a power supply status signal based on the digital compliance signals indicating status of the digital compliance signals; and an output for outputting the power supply status signal, wherein if a power supply is operating at its associated compliance level, the power supply status signal indicates that the power supply is passing, otherwise the power supply status signal indicates that the power supply is failing.

    摘要翻译: 体现在设计过程中使用的机器可读介质中的设计结构包括用于指示具有多个电源的片上电源系统的状态的系统,具有用于接收数字符合性信号的电力系统状态寄存器,与 多个电源中的一个并且具有相关联的合规级别,其中每个数字符合信号指示其相关联的电源是否在相关联的合规级别操作,并且其中电力系统状态寄存器基于数字信号产生电源状态信号 指示数字符合信号状态的符合性信号; 以及用于输出电源状态信号的输出,其中如果电源正在其相关联的顺应性水平下操作,则电源状态信号指示电源正在通过,否则电源状态信号指示电源发生故障 。

    Structure and method for storing multiple repair pass data into a fusebay
    9.
    发明授权
    Structure and method for storing multiple repair pass data into a fusebay 有权
    用于将多个修复传递数据存储到保险丝盒中的结构和方法

    公开(公告)号:US08467260B2

    公开(公告)日:2013-06-18

    申请号:US13198894

    申请日:2011-08-05

    IPC分类号: G11C17/16

    摘要: Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.

    摘要翻译: 相同页数的保险丝宏串联地形成相同数量的保险丝页,每个保险丝页的长度等于相应的熔丝宏页面长度之和。 每个保险丝宏都有一个使能锁存器,配置为允许一次激活一个保险丝宏。 连接到维修寄存器的保险丝控制装置可以将数据存储在保险丝盒中并从熔丝座检索数据。 在编程模式下确定下一个可用的熔丝位置,以便下一个维修通过的数据可以在最后一个数据结束的地方开始。

    DESIGN STRUCTURE USED FOR REPAIRING EMBEDDED MEMORY IN AN INTEGRATED CIRCUIT
    10.
    发明申请
    DESIGN STRUCTURE USED FOR REPAIRING EMBEDDED MEMORY IN AN INTEGRATED CIRCUIT 审中-公开
    用于在集成电路中修复嵌入式存储器的设计结构

    公开(公告)号:US20080165599A1

    公开(公告)日:2008-07-10

    申请号:US11967324

    申请日:2007-12-31

    申请人: Kevin W. Gorman

    发明人: Kevin W. Gorman

    IPC分类号: G11C29/00

    摘要: A design structure for correcting embedded memory that has been identified as being defective by a memory controller. The address of the defective memory is provided by the memory controller to Built-In Test (BIST) logic in combination with a Built-In Redundancy Analyzer (BIRA) to replace the defective memory element with a redundant element.

    摘要翻译: 用于校正被存储器控制器识别为有缺陷的嵌入式存储器的设计结构。 有缺陷的存储器的地址由存储器控制器提供给内置测试(BIST)逻辑与内置冗余分析器​​(BIRA)的组合,以用冗余元件替换有缺陷的存储器元件。