摘要:
The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.
摘要:
The status of multiple on-chip power supply systems is indicated for use in modifying chip test flow and diagnosing chip failure. Digital compliance signals are received, each compliance signal associated with one of multiple on-chip power supplies. Each power supply has an associated compliance level, and each compliance signal indicates whether its associated power supply is operating at the associated compliance level. The compliance signals are converted into a power supply status signal indicating status of the compliance signals associated with the power supply. The power supply status signal is output. If a power supply is operating at its associated compliance level, the output power supply status signal indicates that the power supply is passing. If the power supply is not operating at its associated compliance level, the output power supply status signal indicates that the power supply is failing. If a power supply is failing, a memory test may be aborted, simplifying chip failure diagnosis.
摘要:
Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要:
Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要:
A bit fail map circuit accurately generates a bit fail map of an embedded memory such as a DRAM by utilizing a high speed multiplied clock generated from a low-speed Automated Test Equipment (ATE) tester. The circuit communicates between the ATE tester, the embedded memory under test, Built-In Self-Test (BIST) and Built-In Redundancy Analysis (BIRA). An accurate bit fail map of an embedded DRAM memory is provided by pausing the BIST test circuitry at a point when a fail is encountered, namely a mismatch between BIST expected data and the actual data read from the array, and then shifting the bit fail data off the chip using the low-speed ATE tester clock. Thereafter, the high-speed test is resumed from point of fail by again running the BIST using the high-speed internal clock, to provide at-speed bit Fail Maps.
摘要:
A modular Digital Locked Loop (DLL) architecture capable of generating a plurality of multiple phase clock signals, having particular applicability to synchronization of embedded DRAM systems with on chip timing. The architecture comprises a single core frequency locking circuit that includes a delay element with control logic and locking circuitry capable of locking the DLL system clock frequency to an external reference clock, and a plurality of secondary phase locking circuits capable of synchronizing a plurality of internal clock signals to any phase of the external reference clock.
摘要:
Disclosed are embodiments of a multi-bank random access memory (RAM) structure that provides signal buffering at both the global and local connector level for improved performance. Specifically, inverters are incorporated into the global connector(s), which traverse groups of memory banks and which transmit signals (e.g., address signals, control signals, and/or data signals) from a memory controller, and also into alternating groups of local connectors, which connect nodes on the global connector(s) to corresponding groups of memory banks, such that any of the signals that are received by the memory banks from the memory controller via the global and local connectors are buffered by an even number of inverters and are thereby true signals. Signal buffering at both the global and local connector level results in relatively fast slews, short propagation delays, and low peak power consumption with minimal, if any, increase in area consumption.
摘要:
A differential fuse sensing system includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier having a first input node coupled to the fuse leg and a second node coupled to a reference voltage. The fuse leg further includes a current supply device controlled by a variable reference current generator configured to generate an output signal therefrom such that the voltage on the first input node of the sense amplifier is equal to the voltage on the second input node of the sense amplifier whenever the resistance value of the eFUSE is equal to the resistance value of a programmable variable resistance device included within the variable reference current generator.
摘要:
Disclosed are embodiments of a multi-bank random access memory (RAM) structure that provides signal buffering at both the global and local connector level for improved performance. Specifically, inverters are incorporated into the global connector(s), which traverse groups of memory banks and which transmit signals (e.g., address signals, control signals, and/or data signals) from a memory controller, and also into alternating groups of local connectors, which connect nodes on the global connector(s) to corresponding groups of memory banks, such that any of the signals that are received by the memory banks from the memory controller via the global and local connectors are buffered by an even number of inverters and are thereby true signals. Signal buffering at both the global and local connector level results in relatively fast slews, short propagation delays, and low peak power consumption with minimal, if any, increase in area consumption.
摘要:
An apparatus for regulating eFUSE programming current includes a current control generator receiving an input reference current through a first current path of reference fuses, the input reference current proportional to a desired eFUSE programming current; a second current path including a reference programming FET and a second group of reference fuses; and a voltage comparator coupled to a gate terminal of the reference programming FET so as to adjust the gate voltage of the reference programming FET to equalize a first voltage across the first current path with a second voltage across the second current path. The gate voltage of the reference programming FET is an output of the current control generator, coupled to corresponding gates of one or more selected programming devices of an eFUSE array such that the selected programming devices source the desired eFUSE programming current to a selected eFUSE to be programmed.