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公开(公告)号：US6097019A
公开(公告)日：2000-08-01
申请号：US129708
申请日：1998-08-05
CPC分类号： H05B6/806 , B01J19/126 , G01N22/00 , H05B6/6402 , H05B6/70 , H05B6/705 , B01J2219/00191 , H05B2206/046
摘要： A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave cavity volume and shape and launch structure including antennae location, cavity short location, cavity diameter, coupling loop position, etc. in order to maintain the cavity in resonance and to determine when to exit without operator intervention. Control system can run on a small computer or an embedded controller and is useful for automatically curing polyamic acid to polyimide to a predetermined percent cure, processing preimpregnated glass cloth in a continuous manner which can be used in circuit boards and drying and partial curing of web-like materials automatically without operator intervention.
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公开(公告)号：US4142107A
公开(公告)日：1979-02-27
申请号：US811758
申请日：1977-06-30
IPC分类号： H01L21/30 , G03F7/30 , G11B7/26 , H01L21/027 , G01N21/30
CPC分类号： G03F7/30
摘要： In the process of developing exposed photoresist on a substrate, the endpoint in developing away all of the exposed positive photoresist or any other positive resist is detected by exposing a wafer with a predetermined pattern including an optical grating or other special pattern formed in the photoresist upon a test area. In a system employing this concept, a beam is diffracted by the optics of the grating only at a first angle until the resist forming the grating is removed by development. Then a sensor is activated when an angle of reflection is unblocked when the grating disappears. The system is then turned off to stop development by the sensor in an automatic system or, by the operator in a manual system. A double exposure technique is employed to produce the grating or other special pattern.
摘要翻译： 在衬底上曝光的光致抗蚀剂的显影过程中，通过以包括在光致抗蚀剂中形成的光栅或其他特殊图案的预定图案曝光晶片来检测显影掉所有暴露的正性光致抗蚀剂或任何其它正性抗蚀剂的终点 一个测试区。 在采用该概念的系统中，光束仅以第一角度由光栅的光学器件衍射，直到通过显影去除形成光栅的抗蚀剂。 然后当光栅消失时，当反射角度解除阻塞时，传感器被激活。 然后关闭系统以在自动系统中或由操作者在手动系统中由传感器停止显影。 采用双重曝光技术来生产光栅或其他特殊图案。
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公开(公告)号：US4024293A
公开(公告)日：1977-05-17
申请号：US639551
申请日：1975-12-10
申请人： Michael Hatzakis
发明人： Michael Hatzakis
IPC分类号： G03F7/039 , G03F7/095 , H01L21/027 , H05K3/14 , B05D3/06
CPC分类号： G03F7/095 , G03F7/039 , H05K3/143 , Y10S430/143
摘要： High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutual exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5.times.10.sup.-.sup.6 coulombs/cm.sup.2.
摘要翻译： 用于剥离金属化的高灵敏度抗蚀剂膜通过用至少两层聚合物材料涂覆基材而形成，每层由彼此不相互排斥的不同显影剂显影。 抗蚀剂可以在等于或大于5×10 -6库仑/ cm 2的电子束曝光下进行剥离。
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公开(公告)号：US5110711A
公开(公告)日：1992-05-05
申请号：US683729
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
CPC分类号： G03F7/029 , G03F7/027 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译： 一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或
其中 每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。 该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。 还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。 -
公开(公告)号：US5098816A
公开(公告)日：1992-03-24
申请号：US683778
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
CPC分类号： G03F7/027 , G03F7/029 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译： 一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或
其中 每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。 该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。 还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。 -
6.发明授权Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions 失效超紫外线敏感光敏组合物，其使用和辐射敏感组合物
公开(公告)号：US5059512A
公开(公告)日：1991-10-22
申请号：US419047
申请日：1989-10-10
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
IPC分类号： G03F7/031 , C08F2/50 , C08G59/68 , C08G77/14 , C08G77/22 , C08G85/00 , C08L83/04 , C08L83/06 , G03F7/027 , G03F7/029 , G03F7/075
CPC分类号： G03F7/0755 , G03F7/027 , G03F7/029 , G03F7/0757 , Y10S430/127 , Y10S502/522
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
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公开(公告)号：US4156745A
公开(公告)日：1979-05-29
申请号：US893093
申请日：1978-04-03
申请人： Michael Hatzakis , David J. Webb
发明人： Michael Hatzakis , David J. Webb
IPC分类号： G03C5/08 , C08F220/00 , C08F220/04 , C08F220/10 , G03C1/72 , G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027 , B05D3/06
CPC分类号： G03F7/039
摘要： A high speed high contrast electron resist composition comprising a copolymer of polymethylmethacrylate/methacrylic acid having incorporated therein a metal selected from the group consisting of lead, barium, calcium and strontium is disclosed. The metal is present in the range of from about 0.001% to about 10% by weight of the copolymer.
摘要翻译： 公开了一种包含聚甲基丙烯酸甲酯/甲基丙烯酸共聚物的高速高对比度电子抗蚀剂组合物，其中掺入了选自铅，钡，钙和锶的金属。 金属的存在量为共聚物重量的约0.001％至约10％。
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公开(公告)号：US4086870A
公开(公告)日：1978-05-02
申请号：US811732
申请日：1977-06-30
摘要： A resist spinning head for preventing photoresist, or electron and X-ray resist from flowing to the edge of the wafer when spin coating in a photoresist spinner, which includes the use of a tapered top plate having a knife-edge contact to the surface of the wafer so as to seal the top of the wafer at an outer ring and prevent resist from flowing under the top plate; whereby the resist is guided, during spinning, by the tapered top surface to the edge of the plate and off the head. The tapered top plate is pressed against the wafer and secured by a spring biasing means to a spinner motor shaft.
摘要翻译： {PG，1抗蚀纺丝头，用于防止光致抗蚀剂或电子和X射线抗蚀剂在光刻胶旋涂器中旋涂时流向晶片边缘，其中包括使用具有刀刃接触的锥形顶板 到晶片的表面，以便在外环处密封晶片的顶部，并防止抗蚀剂在顶板下方流动; 由此抗蚀剂在纺丝过程中被锥形顶表面引导到板的边缘并离开头部。 锥形顶板压靠在晶片上，并通过弹簧偏置装置固定到旋转电机轴上。
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公开(公告)号：US06296989B1
公开(公告)日：2001-10-02
申请号：US09152046
申请日：1998-09-11
IPC分类号： G03C500
摘要： A high resolution pattern transfer processes is described, whereby epoxy containing photoresist films are imagewise exposed to radiation, baked to crosslink the exposed areas, and treated with a silylating medium, which reacts with the epoxy ring thereby incorporating silicon at will in the non-crosslinked regions of the film, while making those regions resistant to oxygen atom-containing plasmas.
摘要翻译： 描述了高分辨率图案转印工艺，其中将含环氧树脂的光致抗蚀剂膜成像地暴露于辐射，烘烤以交联暴露的区域，并用甲硅烷基化介质处理，甲基化介质与环氧环反应，从而在非交联的 同时使这些区域对含氧原子的等离子体具有耐受性。
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公开(公告)号：US5565529A
公开(公告)日：1996-10-15
申请号：US85465
申请日：1993-06-30
申请人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
发明人： Edward D. Babich , Michael Hatzakis , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Jane M. Shaw
IPC分类号： B32B7/02 , C08L83/14 , H01B3/18 , H01L21/302 , H01L21/3065 , H01L21/48 , H01L23/14 , H01L23/498 , C08L83/00
CPC分类号： H01L21/4807 , C08L83/14 , H01L23/145 , H01L23/49866 , H01L2924/0002 , Y10S428/901 , Y10T428/31663 , Y10T428/31721
摘要： Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
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