公开(公告)号：US20160181444A1

公开(公告)日：2016-06-23

申请号：US14579935

申请日：2014-12-22

申请人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

发明人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC分类号： H01L31/02 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

摘要翻译： 制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。 该方法还可以包括在电介质区域上形成发射极区域，并在硅衬底的表面上形成掺杂区域。 在一个实施例中，该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域，并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。

公开(公告)号：US09520507B2

公开(公告)日：2016-12-13

申请号：US14579935

申请日：2014-12-22

申请人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

发明人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC分类号： H01L27/15 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224

CPC分类号： H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

摘要翻译： 制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。 该方法还可以包括在电介质区域上形成发射极区域，并在硅衬底的表面上形成掺杂区域。 在一个实施例中，该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域，并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。

公开(公告)号：US20160329441A1

公开(公告)日：2016-11-10

申请号：US15213273

申请日：2016-07-18

申请人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

发明人： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC分类号： H01L31/02 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US20150263200A1

公开(公告)日：2015-09-17

申请号：US14725939

申请日：2015-05-29

申请人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

发明人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

IPC分类号： H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/0216 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

摘要翻译： 描述了制造具有隧道介电层的太阳能电池的方法。 还描述了具有隧道介电层的太阳能电池。

公开(公告)号：US20150243803A1

公开(公告)日：2015-08-27

申请号：US14706773

申请日：2015-05-07

申请人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/068

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

摘要翻译： 描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。 在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。 半导体衬底具有带隙。 在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。 半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

公开(公告)号：US20160071996A1

公开(公告)日：2016-03-10

申请号：US14945708

申请日：2015-11-19

申请人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US20140134788A1

公开(公告)日：2014-05-15

申请号：US14157386

申请日：2014-01-16

申请人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

发明人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

IPC分类号： H01L31/0368 ,  H01L31/0216

CPC分类号： H01L31/03921 ,  H01L31/0216 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

摘要翻译： 描述了用隧道介电层制造太阳能电池的方法。 还描述了具有隧道介电层的太阳能电池。

公开(公告)号：US20130247965A1

公开(公告)日：2013-09-26

申请号：US13429138

申请日：2012-03-23

申请人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US09054255B2

公开(公告)日：2015-06-09

申请号：US13429138

申请日：2012-03-23

申请人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/072 ,  H01L31/0745

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

摘要翻译： 描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。 在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。 半导体衬底具有带隙。 在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。 半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

公开(公告)号：US20130078758A1

公开(公告)日：2013-03-28

申请号：US13677611

申请日：2012-11-15

申请人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

发明人： Tim Dennis ,  Scott Harrington ,  Jane Manning ,  David D. Smith ,  Ann Waldhauer

IPC分类号： H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/0216 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.