公开(公告)号：US06624070B2

公开(公告)日：2003-09-23

申请号：US10000981

申请日：2001-10-24

申请人： David Merricks ,  Martin T. Goosey ,  Narinder Bains

发明人： David Merricks ,  Martin T. Goosey ,  Narinder Bains

IPC分类号： H01L2144

CPC分类号： C23C18/1653 ,  C23C18/30

摘要： Disclosed are catalyst compositions suitable for depositing electroless metal seed layers and for enhancing discontinuous seed layers. Also disclosed are methods of depositing electroless seed layers and enhancing discontinuous seed layers.

公开(公告)号：US06531046B2

公开(公告)日：2003-03-11

申请号：US09738551

申请日：2000-12-15

申请人： Denis Morrissey ,  David Merricks ,  Leon R. Barstad ,  Eugene N. Step ,  Jeffrey M. Calvert ,  Robert A. Schetty, III ,  James G. Shelnut ,  Mark Lefebvre ,  Martin W. Bayes ,  Donald E. Storjohann

发明人： Denis Morrissey ,  David Merricks ,  Leon R. Barstad ,  Eugene N. Step ,  Jeffrey M. Calvert ,  Robert A. Schetty, III ,  James G. Shelnut ,  Mark Lefebvre ,  Martin W. Bayes ,  Donald E. Storjohann

IPC分类号： C25D534

CPC分类号： C25D3/38 ,  C25D5/34 ,  C25D7/123 ,  H01L21/76861 ,  H01L21/76868 ,  H01L21/76873

摘要： Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.

公开(公告)号：US06824665B2

公开(公告)日：2004-11-30

申请号：US09978797

申请日：2001-10-17

申请人： James G. Shelnut ,  David Merricks ,  Oleh B. Dutkewych ,  Charles R. Shipley

发明人： James G. Shelnut ,  David Merricks ,  Oleh B. Dutkewych ,  Charles R. Shipley

IPC分类号： C23C2802

CPC分类号： H01L21/76868 ,  C23C18/1671 ,  C23C18/38 ,  C23C18/405 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76874 ,  H01L2221/1089 ,  H05K3/181 ,  H05K3/388 ,  H05K3/422 ,  Y10S205/916

摘要： Disclosed are methods for depositing a copper seed layer on a substrate having a conductive layer. Such methods are particularly suitable for depositing a copper seed layer on a substrate having small apertures, and preferably very small apertures.

摘要翻译： 公开了在具有导电层的基板上沉积铜籽晶层的方法。 这种方法特别适用于在具有小孔径的基底上沉积铜籽晶层，并且优选地非常小的孔。

公开(公告)号：US06660153B2

公开(公告)日：2003-12-09

申请号：US09982398

申请日：2001-10-17

申请人： David Merricks ,  Denis Morrissey ,  Martin W. Bayes ,  Mark Lefebvre ,  James G. Shelnut ,  Donald E. Storjohann

发明人： David Merricks ,  Denis Morrissey ,  Martin W. Bayes ,  Mark Lefebvre ,  James G. Shelnut ,  Donald E. Storjohann

IPC分类号： C25D502

CPC分类号： H01L21/76868 ,  C25D3/38 ,  C25D5/48 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76874 ,  H01L2221/1089 ,  H05K3/244

摘要： Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.

公开(公告)号：US06660154B2

公开(公告)日：2003-12-09

申请号：US09981851

申请日：2001-10-17

申请人： David Merricks ,  Denis Morrissey ,  Martin W. Bayes ,  Mark Lefebvre ,  James G. Shelnut ,  Donald E. Storjohann

发明人： David Merricks ,  Denis Morrissey ,  Martin W. Bayes ,  Mark Lefebvre ,  James G. Shelnut ,  Donald E. Storjohann

IPC分类号： C23C2800

CPC分类号： H01L21/76843 ,  C23C18/28 ,  C25D3/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.