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公开(公告)号：US06395363B1
公开(公告)日：2002-05-28
申请号：US08743308
申请日：1996-11-05
IPC分类号： C23C1600
CPC分类号： H01L21/68735 , H01L21/68757 , Y10T428/21 , Y10T428/213 , Y10T428/216 , Y10T428/218 , Y10T428/219 , Y10T428/31663
摘要： A substrate support comprising a shelf having a surface sloped at an angle such that the support contacts the substrate substantially at an edge portion of the substrate. The angle of the shelf is greater than an angle of the edge portion of the substrate. The surface of the shelf may be machined or polished to improve its smoothness. The substrate support thereby reduces the effect and severity of scratches on the substrate caused by the support. As a result, the substrate support improves substrate yield.
摘要翻译： 一种基板支撑件，其包括具有以一定角度倾斜的表面的搁架，使得支撑件基本上在基板的边缘部分处接触基板。 搁板的角度大于基板的边缘部分的角度。 搁板的表面可以被加工或抛光以提高其平滑度。 衬底支撑件因此降低了由支撑件引起的衬底划伤的影响和严重性。 结果，衬底支撑物改善了衬底产量。
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2.发明授权
公开(公告)号：US06133152A
公开(公告)日：2000-10-17
申请号：US880194
申请日：1997-05-16
申请人： Benjamin Bierman , Meredith J. Williams , David S. Ballance , Brian Haas , Paul Deaton , James V. Tietz
发明人： Benjamin Bierman , Meredith J. Williams , David S. Ballance , Brian Haas , Paul Deaton , James V. Tietz
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/12 , C30B25/14 , H01L21/26 , H01L21/687 , H01L21/302
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4584 , C23C16/481 , C30B25/12 , C30B25/14 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.
摘要翻译： 一种用于隔离处理室中的旋转框架的装置，包括：可旋转地从所述旋转框架延伸的支撑筒; 以及从所述支撑筒延伸到至少一个基本上热，光学和机械地将所述共旋转边缘环延伸部上方的区域与所述同向旋转边缘环延伸部下方的区域隔开的共同旋转边缘环延伸。
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公开(公告)号：US6035100A
公开(公告)日：2000-03-07
申请号：US858089
申请日：1997-05-16
申请人： Benjamin Bierman , David S. Ballance , James V. Tietz , Brian Haas , Meredith J. Williams , Paul Deaton
发明人： Benjamin Bierman , David S. Ballance , James V. Tietz , Brian Haas , Meredith J. Williams , Paul Deaton
CPC分类号： H01L21/67017 , G01J5/0003
摘要： In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.
摘要翻译： 在一个实施例中，本发明涉及一种用于防止在处理室中的反射器上发生沉积的装置，包括：邻近反射器布置的盖，所述盖在反射器反射的波长范围内可光学透明; 以及用于保持盖相对于反射器的位置的至少一个盖支撑件。
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4.发明授权
公开(公告)号：US6123766A
公开(公告)日：2000-09-26
申请号：US872123
申请日：1997-05-16
申请人： Meredith J. Williams , David S. Ballance , Benjamin Bierman , Paul Deaton , Brian Haas , Nobuyuki Takahashi , James V. Tietz
发明人： Meredith J. Williams , David S. Ballance , Benjamin Bierman , Paul Deaton , Brian Haas , Nobuyuki Takahashi , James V. Tietz
CPC分类号： C23C16/46 , C30B25/10 , C30B25/16 , Y10T117/1008
摘要： A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.
摘要翻译： 一种用于控制处理室中的衬底的温度的方法。 处理室采用对至少两个加热区的加热控制。 根据与衬底温度和用户可定义的偏移相对应的测量信号，每个加热区可独立控制。
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5.发明授权Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween 失效气体导入用于具有上透明板和下透明板的RTP室的喷淋头，并且其间流动气体流
公开(公告)号：US5781693A
公开(公告)日：1998-07-14
申请号：US687150
申请日：1996-07-24
IPC分类号： B01J4/00 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23F4/00 , C30B25/10 , C30B25/14 , C30B31/12 , C30B31/16 , H01L21/205 , H01L21/22 , H01L21/302 , H01L21/3065 , H01L21/20
CPC分类号： C23C16/45574 , C23C16/45565 , C23C16/4584 , C23C16/481 , C30B25/10 , C30B25/14 , C30B31/12 , C30B31/16
摘要： A showerhead for use with a lamp head in a thermal processing chamber, the lamp head including a high intensity source which emits radiation that heats a substrate within the chamber, the showerhead including a top window on a side of the showerhead that is adjacent to the lamp head; a bottom window on a side of the showerhead that is adjacent to the substrate during processing; and a gas supply inlet through which a gas is introduced into a space between the top and bottom windows, wherein the top and bottom windows are transparent to the radiation from the source in the lamp head and wherein the bottom window includes a plurality of gas distribution holes through which gas is injected from the space between the top and bottom windows into the chamber.
摘要翻译： 一种与热处理室中的灯头一起使用的喷头，所述灯头包括发射辐射的高强度源，所述辐射辐射加热所述腔室内的衬底，所述喷头包括位于所述淋浴头侧面上的顶部窗口， 灯头; 在处理过程中在喷头的与衬底相邻的一侧上的底部窗口; 以及气体供给入口，通过所述气体供给入口将气体引入到所述顶部和底部窗口之间的空间中，其中所述顶部和底部窗口对于来自所述灯头中的所述源的辐射是透明的，并且其中所述底部窗口包括多个气体分布 气体从顶部和底部窗口之间的空间注入到腔室中。
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公开(公告)号：US5920797A
公开(公告)日：1999-07-06
申请号：US758699
申请日：1996-12-03
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/26 , H01L21/31 , H01L21/683
CPC分类号： H01L21/67115 , H01L21/6838 , Y10S438/909
摘要： A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.
摘要翻译： 一种降低热处理室中的衬底上的应力的方法。 该方法包括以下步骤：通过使基板的第一部分接触而支撑基板的第一部分，使得基板的第二部分不接触，形成空腔的一个壁的第二部分的一部分并将气体流入腔 使得气体的压力在第二部分上施加力以至少部分地支撑第二部分。
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7.发明授权Method and apparatus for purging the back side of a substrate during chemical vapor processing 失效用于在化学气相处理期间净化衬底的背面的方法和装置
公开(公告)号：US5884412A
公开(公告)日：1999-03-23
申请号：US687166
申请日：1996-07-24
IPC分类号： C23C16/44 , C23C16/455 , F26B11/18
CPC分类号： C23C16/45521 , C23C16/455
摘要： A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.
摘要翻译： 在化学蒸汽处理过程中处理盘形基板或晶片的方法包括用吹扫气体对基板进行背面吹扫。 背面吹扫是通过围绕中心轴线旋转衬底而获得的，该吹扫气体引导吹扫气体流过纺丝衬底的背面，并使吹扫气体与旋转衬底沿向外径向流动。 构造用于进行背面清洗的蒸气处理系统中的装置包括构造和布置成支撑基板并围绕中心轴线旋转基板的支撑机构，以及耦合到吹扫气体源的导管，其被构造和布置成引导 当衬底旋转时，吹扫气体在衬底的背面上流动，使得纺丝衬底使吹扫气体径向向外流动。
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公开(公告)号：US6090210A
公开(公告)日：2000-07-18
申请号：US690265
申请日：1996-07-24
IPC分类号： B01J4/00 , C23C16/44 , C23C16/455 , C23C16/48 , C23F4/00 , C30B25/14 , C30B31/16 , H01L21/205 , H01L21/22 , H01L21/302 , H01L21/3065 , C23C16/00 , F27B5/04 , F27B5/16
CPC分类号： C23C16/45574 , C23C16/45565 , C23C16/45572 , C23C16/481 , C30B25/14 , C30B31/16 , H01L21/67115
摘要： A showerhead for introducing gas from one or more external supplies into a substrate processing chamber, the showerhead including a faceplate including a plurality of gas injection ports through which gas is injected into the chamber, wherein the plurality of gas injection ports includes a first subset of gas injection ports and a second subset of gas injection ports; a first gas distribution system which during use delivers a first gas to the first subset of injection ports for injection into the chamber; and a second gas distribution system which during use delivers a second gas to the second subset of injection ports for injection into the chamber.
摘要翻译： 一种用于将气体从一个或多个外部供应引入基板处理室的喷头，所述喷头包括面板，所述面板包括多个气体注入口，气体通过所述气体注入口注入到所述室中，其中所述多个气体注入端口包括： 气体注入口和气体注入口的第二子集; 第一气体分配系统，其在使用期间将第一气体输送到用于喷射到所述室中的所述注入口的第一子集; 以及第二气体分配系统，其在使用期间将第二气体输送到用于喷射到室中的第二注入口子集。
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9.发明授权Method and apparatus for purging the back side of a substrate during chemical vapor processing 失效用于在化学气相处理期间净化衬底的背面的方法和装置
公开(公告)号：US5960555A
公开(公告)日：1999-10-05
申请号：US858091
申请日：1997-05-16
申请人： Paul Deaton , Benjamin Bierman , Meredith J. Williams , Brian Haas , David S. Ballance , James V. Tietz
发明人： Paul Deaton , Benjamin Bierman , Meredith J. Williams , Brian Haas , David S. Ballance , James V. Tietz
IPC分类号： H01L21/683 , C23C16/44 , C23C16/455 , H01L21/205 , H01L21/26 , H01L21/31 , F26B11/18
CPC分类号： C23C16/45521 , C23C16/455
摘要： An apparatus for purging the backside of a substrate in a process chamber includes a purge gas injector. The injector includes a substantially annular-shaped opening providing a slit that is structured and arranged to direct a flow of purge gas about radially outward therefrom in a direction approximately parallel to a plane defined by the substrate, wherein the substrate is supported in the process chamber above the purge gas injector. When the substrate is rotated at a sufficient speed, the purge gas flowing from the injector is impelled to flow spirally outward along the backside of the substrate.
摘要翻译： 用于清洗处理室中的衬底背面的装置包括净化气体注入器。 喷射器包括大致环形的开口，其提供狭缝，该狭缝被构造和布置成沿着大致平行于由衬底限定的平面的方向引导吹扫气体的径向向外流动，其中衬底被支撑在处理室 在吹扫气体喷射器之上。 当衬底以足够的速度旋转时，从注射器流出的吹扫气体被推动沿着衬底的背面螺旋地向外流动。
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公开(公告)号：US5848889A
公开(公告)日：1998-12-15
申请号：US685493
申请日：1996-07-24
IPC分类号： H01L21/683 , H01L21/205 , H01L21/22 , H01L21/26 , H01L21/687 , F27D5/00
CPC分类号： H01L21/68735
摘要： An annular-shaped edge ring support for a semiconductor wafer has an innermost radial portion for supporting the semiconductor wafer and an outermost radial portion contiguous with the inner portion. The inner portion has a graded thermal mass that generally increases with increasing radius.
摘要翻译： 用于半导体晶片的环形边缘环支撑件具有用于支撑半导体晶片的最内径向部分和与内部部分邻接的最外径部分。 内部部分具有通常随着半径的增加而增加的分级热质量。
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