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    MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME
    1.
    发明申请
    MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME 有权
    具有频率选择性位置的多带子波长红外探测器及其制作方法

    公开(公告)号：US20100276595A1

    公开(公告)日：2010-11-04

    申请号：US12433631

    申请日：2009-04-30

    申请人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    发明人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    IPC分类号： G01J5/02 ,  B05D5/00 ,  B44C1/22

    CPC分类号： H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L31/0232 ,  H01L31/0236

    摘要： In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

    摘要翻译： 在一个实施例中，多频带红外（IR）检测器阵列包括具有多个周期性谐振结构的金属表面，其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素，第一和第二谐振结构具有相关联的检测器，并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上，并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中，谐振结构是孔或狭缝，并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。

    Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same
    2.
    发明授权
    Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same 有权
    具有频率选择性时隙的多频带子波长IR检测器及其制造方法

    公开(公告)号：US07923689B2

    公开(公告)日：2011-04-12

    申请号：US12433631

    申请日：2009-04-30

    申请人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    发明人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

    IPC分类号： G01J5/02

    CPC分类号： H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L31/0232 ,  H01L31/0236

    摘要： In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

    摘要翻译： 在一个实施例中，多频带红外（IR）检测器阵列包括具有多个周期性谐振结构的金属表面，其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素，第一和第二谐振结构具有相关联的检测器，并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上，并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中，谐振结构是孔或狭缝，并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。

    Quartz-based MEMS resonators and methods of fabricating same
    5.
    发明授权
    Quartz-based MEMS resonators and methods of fabricating same 有权
    基于石英的MEMS谐振器及其制造方法

    公开(公告)号：US08765615B1

    公开(公告)日：2014-07-01

    申请号：US12816292

    申请日：2010-06-15

    申请人： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

    发明人： David T. Chang ,  Frederic P. Stratton ,  Hung Nguyen ,  Randall L. Kubena

    IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3105

    CPC分类号： H01L21/31111 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/038 ,  H01L21/31056 ,  H03H3/0072 ,  H03H2009/02291

    摘要： A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.

    摘要翻译： 用于低频应用（通常低于UHF频谱的较高端）的夸特谐振器，其中厚度大于10微米的相对较厚的石英构件被要求。 一种制造相同谐振器的方法包括提供第一夸脱基片; 将第一石英基板变薄至所需厚度; 在所述第一石英衬底的第一主表面的一部分上形成金属蚀刻停止件; 使用临时粘合剂将第一石英基板的第一主表面与其上形成的金属蚀刻停止粘合到第二石英基板上; 将通过第一石英衬底的通孔蚀刻到蚀刻停止部; 在所述第一石英衬底的第二主表面上形成金属电极，所述金属电极穿过所述第一石英衬底中的通孔以与所述金属蚀刻停止件欧姆接触; 将形成在第一石英衬底的第二主表面上的金属电极接合到形成在承载振荡器驱动电路的衬底上的焊盘，以在其之间形成结合; 并且将临时粘合剂溶解，从而从基板轴承振荡器驱动电路和第一石英基板的一部分经由形成在第一石英基板的第二主表面上的金属电极之间的键与第一石英基板接合的部分而释放第二石英基板 衬垫形成在承载振荡器驱动电路的衬底上。

    Low frequency quartz based MEMS resonators and method of fabricating the same
    6.
    发明授权
    Low frequency quartz based MEMS resonators and method of fabricating the same 有权
    低频石英MEMS谐振器及其制造方法

    公开(公告)号：US07851971B2

    公开(公告)日：2010-12-14

    申请号：US12577420

    申请日：2009-10-12

    申请人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

    发明人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

    IPC分类号： H01L41/08

    CPC分类号： H04R31/00 ,  H04R19/005 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

    摘要： A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

    摘要翻译： 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英 将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔 晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器 到基板接合焊盘，并且移除硅手柄。

    Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope
    7.
    发明授权
    Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope 失效
    三叶草微镜和三叶草微陀螺的制作方法

    公开(公告)号：US07202100B1

    公开(公告)日：2007-04-10

    申请号：US10933853

    申请日：2004-09-03

    申请人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    发明人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    IPC分类号： H01L21/00

    CPC分类号： G01C19/5719

    摘要： The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, attaching the resonator wafer to a base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer. The present invention relates further to a gyroscope containing an integrated post with on or off-chip electronics.

    摘要翻译： 本发明涉及一种制造含有一体式立柱的三叶草微陀螺仪的方法，该方法包括：将后晶片连接到共振器晶片，从后晶片形成底柱，附着于谐振晶片，将谐振晶片连接到基片 其中所述底柱装配到所述基底晶片中的柱孔中，从所述谐振器晶片形成顶部柱，其中所述底部和顶部柱围绕相同的轴线对称地形成，并且将盖子晶片附接在所述基底晶片的顶部上。 本发明还涉及一种包含具有片上或片外电子器件的集成柱的陀螺仪。

    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
    8.
    发明授权
    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects 失效
    具有晶片间互连的三叶草微型陀螺仪和具有贯穿晶片互连的三叶草微型制造器的制造方法

    公开(公告)号：US07015060B1

    公开(公告)日：2006-03-21

    申请号：US11008721

    申请日：2004-12-08

    申请人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    发明人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    IPC分类号： H01L21/00

    CPC分类号： G01C19/5719 ,  H01L21/76898

    摘要： The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

    摘要翻译： 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法，其特征在于，包括：将后晶片连接到谐振晶片，从后晶片形成底柱，附着于谐振晶片，制备带晶圆的基晶片 互连，将谐振器晶片连接到基底晶片，其中底部支架装配到基底晶片中的柱孔中，从谐振器晶片形成顶部柱，其中底部和顶部柱围绕相同的轴线对称地形成，并且附接 在基底晶片顶部的盖子晶片。

    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
    9.
    发明授权
    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects 失效
    具有晶片间互连的三叶草微型陀螺仪和具有贯穿晶片互连的三叶草微型制造器的制造方法

    公开(公告)号：US07671431B1

    公开(公告)日：2010-03-02

    申请号：US11330376

    申请日：2006-01-10

    申请人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    发明人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

    IPC分类号： H01L23/00

    CPC分类号： G01C19/5719 ,  H01L21/76898

    摘要： The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

    摘要翻译： 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法，其特征在于，包括：将后晶片连接到谐振晶片，从后晶片形成底柱，附着于谐振晶片，制备带晶圆的基晶片 互连，将谐振器晶片连接到基底晶片，其中底部支架装配到基底晶片中的柱孔中，从谐振器晶片形成顶部柱，其中底部和顶部柱围绕相同的轴线对称地形成，并且附接 在基底晶片顶部的盖子晶片。

    Method of fabricating a low frequency quartz resonator
    10.
    发明授权
    Method of fabricating a low frequency quartz resonator 有权
    制造低频石英谐振器的方法

    公开(公告)号：US07647688B1

    公开(公告)日：2010-01-19

    申请号：US12189617

    申请日：2008-08-11

    申请人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

    发明人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

    IPC分类号： H04R31/00

    CPC分类号： H04R31/00 ,  H04R19/005 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

    摘要： A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

    摘要翻译： 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英 将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔 晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器 到基板接合焊盘，并且移除硅手柄。