摘要:
Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0.sup.2,6 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.
摘要:
Positive resists are formed from a soluble phenolic resin and a sensitizer which is a diester of a 1-oxo-2-diazonaphthalene sulfonic acid and of an unsymmetrical primary or secondary aliphatic diol which is a mixture of geometric and diastereoisomers.
摘要:
A polymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.
摘要:
A copolymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl and wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.
摘要:
A lithographic resin for use with deep ultraviolet radiation comprises a weakly acidic resin and an alpha phosphoryl substituted diazo carbonyl compound as a sensitizer.
摘要:
A negative tone resist image is achieved by (1) coating a substrate with a film of a polymer containing a masked, reactive functionality; (2) imagewise exposing the film to radiation in a fashion such that the masked functionality is liberated; (3) contacting the film with an organometallic reagent; (4) developing the relief image by the oxygen plasma etching.
摘要:
A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.
摘要:
The present invention is directed to an apparatus for patterning a liquid on a substrate, with the apparatus including, a template having a pair of spaced-apart recessions with a protrusion disposed therebetween, with the protrusion being spaced-apart from the substrate a first distance and each of the pair of spaced-apart recessions being spaced-apart from the substrate a second distance, with the second distance being greater than the first distance; and a source of voltage in electrical communication with the template to produce an electric field between the template and the substrate, with a strength of the electrical field being inversely proportional to the first and second distances.