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    Systems and methods for adapting parameters to increase throughput during laser-based wafer processing
    3.
    发明授权
    Systems and methods for adapting parameters to increase throughput during laser-based wafer processing 失效
    用于调整参数以提高基于激光的晶片处理过程中的吞吐量的系统和方法

    公开(公告)号：US08076605B2

    公开(公告)日：2011-12-13

    申请号：US11768048

    申请日：2007-06-25

    申请人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

    发明人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

    IPC分类号： B23K26/04

    CPC分类号： B23K26/0853 ,  B23K26/042 ,  B23K26/082 ,  B23K26/351 ,  B23K2101/40 ,  G11C17/143 ,  G11C29/006 ,  G11C29/028 ,  G11C29/56 ,  H01L21/76894

    摘要： Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.

    摘要翻译： 系统和方法自动修改基于激光的系统，以处理目标样品，如半导体晶圆。 在一个实施例中，基于激光的系统检测与处理模型相关联的触发。 处理模型对应于一组晶片。 响应于触发，系统根据处理模型自动调整一个或多个系统参数。 然后，系统使用修改的系统参数来选择性地照射在该组晶片中的至少一个晶片上或其内的结构。 在一个实施例中，触发器包括与运动级相关的热状态的变化。 响应于热状态的变化，系统以一系列运动运行运动阶段，直到达到热平衡阈值。 运动顺序可以例如模拟用于处理特定晶片的运动。

    Photonic clock stabilized laser comb processing
    4.
    发明授权
    Photonic clock stabilized laser comb processing 失效
    光子时钟稳定激光梳状加工

    公开(公告)号：US07982160B2

    公开(公告)日：2011-07-19

    申请号：US12060199

    申请日：2008-03-31

    申请人： Brian W. Baird ,  Kelly J. Bruland ,  Clint Vandergiessen ,  Mark A. Unrath ,  Brady Nilsen ,  Steve Swaringen

    发明人： Brian W. Baird ,  Kelly J. Bruland ,  Clint Vandergiessen ,  Mark A. Unrath ,  Brady Nilsen ,  Steve Swaringen

    IPC分类号： B23K26/36 ,  H01L21/768 ,  H01L21/77

    CPC分类号： H01S3/0007 ,  B23K26/042 ,  B23K26/0622 ,  B23K26/0853

    摘要： Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam positioning system and one or more cooperating beam position compensation elements to align beam delivery coordinates relative to the workpiece. The method also includes, at a second pulse repetition frequency that is lower than the first pulse repetition frequency, selectively amplifying a subset of the laser pulses. The selection of the laser pulses included in the subset is based on the first pulse repetition frequency and position data received from the beam positioning system. The method further includes adjusting the beam delivery coordinates using the one or more cooperating beam position compensation elements so as to direct the amplified laser pulses to selected targets on the workpiece.

    摘要翻译： 用激光加工工件包括以第一脉冲重复频率产生激光脉冲。 第一脉冲重复频率提供用于协调光束定位系统和一个或多个配合光束位置补偿元件的参考定时，以相对于工件对准光束传送坐标。 该方法还包括在低于第一脉冲重复频率的第二脉冲重复频率下，选择性地放大激光脉冲的子集。 包括在子集中的激光脉冲的选择基于从波束定位系统接收的第一脉冲重复频率和位置数据。 该方法还包括使用一个或多个配合光束位置补偿元件来调整光束传送坐标，以便将放大的激光脉冲引导到工件上的选定目标。

    On-the fly laser beam path dithering for enhancing throughput
    7.
    发明授权
    On-the fly laser beam path dithering for enhancing throughput 有权
    用于增强吞吐量的飞行激光束路径抖动

    公开(公告)号：US08497450B2

    公开(公告)日：2013-07-30

    申请号：US11925562

    申请日：2007-10-26

    申请人： Kelly Bruland ,  Mark Unrath ,  Stephen Swaringen ,  Ho Wai Lo ,  Clint Vandergiessen ,  Keith Grant

    发明人： Kelly Bruland ,  Mark Unrath ,  Stephen Swaringen ,  Ho Wai Lo ,  Clint Vandergiessen ,  Keith Grant

    IPC分类号： B23K26/00 ,  B23K26/06 ,  B23K26/16

    CPC分类号： G02B26/101

    摘要： A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

    摘要翻译： 基于激光的工件处理系统包括连接到传感器控制器的传感器，传感器控制器将传感器信号转换成聚焦点运动命令，用于致动诸如双轴转向镜的光束转向装置。 传感器可以包括用于校正在光路中检测到的误差的光束位置传感器，例如响应于激光或声光调制器指向稳定性的热感应波束漂移或光学安装动态。

    SYSTEMS AND METHODS FOR ADAPTING PARAMETERS TO INCREASE THROUGHPUT DURING LASER-BASED WAFER PROCESSING
    10.
    发明申请
    SYSTEMS AND METHODS FOR ADAPTING PARAMETERS TO INCREASE THROUGHPUT DURING LASER-BASED WAFER PROCESSING 失效
    用于在基于激光的波浪加工中适应参数以增加通量的系统和方法

    公开(公告)号：US20080314879A1

    公开(公告)日：2008-12-25

    申请号：US11768048

    申请日：2007-06-25

    申请人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

    发明人： Kelly J. Bruland ,  Clint Vandergiessen ,  Duane Eitzen

    IPC分类号： B23K26/04

    CPC分类号： B23K26/0853 ,  B23K26/042 ,  B23K26/082 ,  B23K26/351 ,  B23K2101/40 ,  G11C17/143 ,  G11C29/006 ,  G11C29/028 ,  G11C29/56 ,  H01L21/76894

    摘要： Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.

    摘要翻译： 系统和方法自动修改基于激光的系统，以处理目标样品，如半导体晶圆。 在一个实施例中，基于激光的系统检测与处理模型相关联的触发。 处理模型对应于一组晶片。 响应于触发，系统根据处理模型自动调整一个或多个系统参数。 然后，系统使用修改的系统参数来选择性地照射在该组晶片中的至少一个晶片上或其内的结构。 在一个实施例中，触发器包括与运动级相关的热状态的变化。 响应于热状态的变化，系统以一系列运动运行运动阶段，直到达到热平衡阈值。 运动顺序可以例如模拟用于处理特定晶片的运动。