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14 条记录 (耗时 0.034 秒)

    Magnetoresistive sensor having a pinned soft magnetic layer
    1.
    发明授权
    Magnetoresistive sensor having a pinned soft magnetic layer 失效
    具有钉扎软磁性层的磁阻传感器

    公开(公告)号：US5923505A

    公开(公告)日：1999-07-13

    申请号：US827099

    申请日：1997-03-17

    申请人： Derek Jan Kroes ,  Marcos M. Lederman ,  Samuel W. Yuan

    发明人： Derek Jan Kroes ,  Marcos M. Lederman ,  Samuel W. Yuan

    IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3268 ,  G11B5/3163 ,  G11B5/3932

    摘要： A magnetoresistive (MR) read sensor fabricated on a substrate comprises an MR layer of magnetoresistive material, a soft adjacent layer (SAL) of soft magnetic material, and a manganese-based metallic antiferromagnetic (AFM) layer between the MR layer and the SAL layer. The AFM layer is in direct contact with the SAL layer and is separated from the MR layer by a non-magnetic spacer layer. A non-magnetic texturing layer is disposed between the SAL layer and the substrate. This structure exhibits a much larger pinning field than read sensors using oxide-based antiferromagnets.

    摘要翻译： 制造在衬底上的磁阻（MR）读取传感器包括磁阻材料的MR层，软磁材料的软相邻层（SAL）和MR层与SAL层之间的锰基金属反铁磁（AFM）层 。 AFM层与SAL层直接接触，并通过非磁性间隔层与MR层分离。 非磁性纹理层设置在SAL层和衬底之间。 该结构表现出比使用基于氧化物的反铁磁体的读取传感器大得多的钉扎场。

    Magnetoresistive reas transducer with exchange biasing of magnetoresistive sensor and soft adjacent layer
    2.
    发明授权
    Magnetoresistive reas transducer with exchange biasing of magnetoresistive sensor and soft adjacent layer 失效
    具有磁阻传感器和软相邻层的交换偏置的磁阻读取传感器

    公开(公告)号：US5748413A

    公开(公告)日：1998-05-05

    申请号：US657999

    申请日：1996-06-04

    申请人： Marcos M. Lederman ,  Samuel W. Yuan

    发明人： Marcos M. Lederman ,  Samuel W. Yuan

    IPC分类号： G11B5/39 ,  G11B5/30

    CPC分类号： G11B5/3932

    摘要： A magnetoresistive (MR) read transducer includes an MR sensor element having end regions and a center active region. The end regions are pinned both top and bottom by an exchange coupling antiferromagnetic material. This pinning action causes the end regions to act as permanent magnets having the same remanent magnetic moment M.sub.r as that of the center active region, thereby resulting in suppression of magnetic edge effects in the transducer. A magnetic soft bias layer adjacent to the magnetoresistive sensor element also has its ends pinned by exchange coupling antiferromagnetic material.

    摘要翻译： 磁阻（MR）读取传感器包括具有端部区域和中心有源区域的MR传感器元件。 端部区域通过交换耦合反铁磁材料固定在顶部和底部。 这种钉扎作用使得端部区域作为具有与中心有源区域相同的剩余磁矩Mr的永磁体，从而导致抑制换能器中的磁边缘效应。 与磁阻传感器元件相邻的磁性软偏置层也通过交换耦合反铁磁材料固定其端部。

    Magnetoresistive read transducers with multiple longitudinal stabilization layers
    3.
    发明授权
    Magnetoresistive read transducers with multiple longitudinal stabilization layers 失效
    具有多个纵向稳定层的磁阻读取传感器

    公开(公告)号：US5739987A

    公开(公告)日：1998-04-14

    申请号：US658000

    申请日：1996-06-04

    申请人： Samuel W. Yuan ,  Daniel A. Nepela ,  Marcos M. Lederman

    发明人： Samuel W. Yuan ,  Daniel A. Nepela ,  Marcos M. Lederman

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A read transducer assembly includes a giant magnetoresistive structure in magnetic contact with a multilayered biasing structure that includes layers of antiferromagnetic material interleaved with layers of soft magnetic material. The magnetic exchange coupling between the antiferromagnetic layers and the soft magnetic layers results in a bias field to the giant magnetoresistive structure that reduces or eliminates side reading by the read transducer assembly. The multilayered biasing structure is located adjacent to and in magnetic contact with either the end or the top surfaces of the giant magnetoresistive structure.

    摘要翻译： 读换能器组件包括与多层偏置结构磁接触的巨磁阻结构，其包括与软磁材料层交替的反铁磁材料层。 反铁磁层和软磁层之间的磁交换耦合导致巨磁阻结构的偏置场，从而减小或消除读取换能器组件的侧读。 多层偏压结构位于与巨磁阻结构的端面或顶表面相邻并且与磁接触的位置。

    Magnetoresistive sensor with overlapping leads having distributed current
    5.
    发明授权
    Magnetoresistive sensor with overlapping leads having distributed current 有权
    具有重叠引线的磁阻传感器具有分布电流

    公开(公告)号：US06989972B1

    公开(公告)日：2006-01-24

    申请号：US10261119

    申请日：2002-09-30

    申请人： Kroum Stoev ,  Mathew Gibbons ,  Francis Liu ,  Bogdan M. Simion ,  Aparna C. Vadde ,  Jing Zhang ,  Yiming Huai ,  Marcos M. Lederman

    发明人： Kroum Stoev ,  Mathew Gibbons ,  Francis Liu ,  Bogdan M. Simion ,  Aparna C. Vadde ,  Jing Zhang ,  Yiming Huai ,  Marcos M. Lederman

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932

    摘要： Magnetoresistive (MR) sensors have leads that overlap a MR structure and distribute current to the MR structure so that the current is not concentrated in small portions of the leads. An electrically resistive capping layer can be formed between the leads and the MR structure to distribute the current. The leads can include resistive layers and conductive layers, the resistive layers having a thickness-to-resistivity ratio that is greater than that of each of the conductive layers. The resistive layers may protect the conductive layers during MR structure etching, so that the leads have broad layers of electrically conductive material for connection to MR structures. The broad leads conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.

    摘要翻译： 磁阻（MR）传感器具有与MR结构重叠并且将电流分配到MR结构的引线，使得电流不集中在引线的小部分中。 可以在引线和MR结构之间形成电阻覆盖层以分布电流。 引线可以包括电阻层和导电层，电阻层的厚度 - 电阻率比大于每个导电层的厚度 - 电阻率比。 电阻层可以在MR结构蚀刻期间保护导电层，使得引线具有用于连接到MR结构的宽的导电材料层。 宽引线比它们所替代的读取间隙材料更好地传导热量，进一步降低引线与MR结构之间的连接处的温度。

    Highly conductive lead adjoining MR stripe and extending beyond stripe height at junction
    7.
    发明授权
    Highly conductive lead adjoining MR stripe and extending beyond stripe height at junction 有权
    高导电导线邻接MR条纹，并在结处延伸超过条纹高度

    公开(公告)号：US07211339B1

    公开(公告)日：2007-05-01

    申请号：US10226398

    申请日：2002-08-22

    申请人： David J. Seagle ,  Marcos M. Lederman

    发明人： David J. Seagle ,  Marcos M. Lederman

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  G11B5/398 ,  Y10T428/1171 ,  Y10T428/1193

    摘要： Magnetoresistive (MR) sensors are disclosed that have leads with reduced resistance, improving the signal-to-noise ratio of the sensors. The leads have broad layers of highly conductive material for connection to MR structures, as opposed to thin wires of highly conductive material or broad layers of resistive material, lowering the resistance of the leads. The low-resistance leads can be formed without increasing the shield-to-shield spacing, providing highly sensitive and focused MR sensors.

    摘要翻译： 公开了具有降低电阻的引线的磁阻（MR）传感器，提高了传感器的信噪比。 引线具有用于连接到MR结构的宽导电材料层，与高导电材料或宽电阻材料层的细线相反，降低了引线的电阻。 可以在不增加屏蔽间隔的情况下形成低电阻引线，提供高灵敏度和聚焦的MR传感器。

    Magnetoresistive spin valve sensor with multilayered keeper
    9.
    发明授权
    Magnetoresistive spin valve sensor with multilayered keeper 失效
    具有多层保持器的磁阻自旋阀传感器

    公开(公告)号：US5742162A

    公开(公告)日：1998-04-21

    申请号：US682276

    申请日：1996-07-17

    申请人： Daniel A. Nepela ,  Marcos M. Lederman

    发明人： Daniel A. Nepela ,  Marcos M. Lederman

    IPC分类号： G01R33/09 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L43/08

    摘要： A magnetic sensing structure includes a spin valve sensor having a pinned magnetic layer and a free magnetic layer, the direction of magnetization of the free layer varying as a function of the magnetic field applied to the structure. A multilayered magnetic keeper structure is provided to cancel the magnetostatic field from the pinned layer to provide an ideal bias profile for the structure in the absence of an applied magnetic field. Longitudinal magnetic bias may be applied to the spin valve sensor through a contiguous junction magnetic structure adjacent to the keeper structure and spin valve sensor.

    摘要翻译： 磁感测结构包括具有钉扎磁性层和自由磁性层的自旋阀传感器，自由层的磁化方向根据施加到该结构的磁场的函数而变化。 提供多层磁保持器结构来抵消来自被钉扎层的静磁场，以在没有施加的磁场的情况下为结构提供理想的偏置轮廓。 可以通过与保持器结构和自旋阀传感器相邻的连续结磁结构将自旋阀传感器施加纵向磁偏置。

    Magnetic head with thin trailing pedestal layer
    10.
    发明授权
    Magnetic head with thin trailing pedestal layer 失效
    磁头与薄拖尾基座层

    公开(公告)号：US07292409B1

    公开(公告)日：2007-11-06

    申请号：US10788766

    申请日：2004-02-27

    申请人： Kroum S. Stoev ,  Francis H. Liu ,  James H. Wang ,  Marcos M. Lederman ,  David J. Seagle

    发明人： Kroum S. Stoev ,  Francis H. Liu ,  James H. Wang ,  Marcos M. Lederman ,  David J. Seagle

    IPC分类号： G11B5/147 ,  G11B5/17 ,  G11B5/187

    CPC分类号： G11B5/3146 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123

    摘要： A magnetic head for a disk drive is disclosed that has a first soft magnetic pole layer disposed in the head adjacent to a medium-facing surface and extending perpendicular to the medium-facing surface; a second soft magnetic pole layer disposed closer than the first pole layer to the trailing end, the second pole layer magnetically coupled to the first pole layer in a backgap region; a soft magnetic pedestal adjoining the second pole layer, disposed closer than the second pole layer to the medium-facing surface and extending less than the second pole layer extends from the medium-facing surface, the pedestal separated from the first pole layer by a nonferromagnetic gap, the pedestal having a thickness that is less than four hundred and fifty nanometers between the gap and the second pole layer. Longitudinal and perpendicular recording embodiments are disclosed, as well as solenoidal, single-layer and dual-layer reversed-current coil structures.

    摘要翻译： 公开了一种用于磁盘驱动器的磁头，其具有第一软磁极层，该第一软磁极层设置在与中间面向表面相邻并且垂直于介质面向表面延伸的头部中; 第二软磁极层，设置成比所述第一极层更靠近所述后端，所述第二极层在后隙区域中磁耦合到所述第一极层; 邻近第二极层的软磁性基座设置成比第二极层更靠近介质相对表面并且延伸小于第二极层从中介面向表面延伸，基座与第一极层分离，由非铁磁 间隙，所述基座在所述间隙和所述第二极层之间具有小于四百五十纳米的厚度。 公开纵向和垂直记录实施例，以及螺线管，单层和双层反向电流线圈结构。