公开(公告)号：US09306056B2

公开(公告)日：2016-04-05

申请号：US12610148

申请日：2009-10-30

申请人： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

发明人： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

IPC分类号： H01L23/48 ,  H01L29/78 ,  H01L23/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/45

CPC分类号： H01L29/7809 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/06051 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

摘要翻译： 半导体器件（例如，倒装芯片）包括通过中间层与漏极接触分离的衬底层。 通过中间层的沟槽状馈通元件用于在器件工作时电连接漏极接触和衬底层。

公开(公告)号：US20110101525A1

公开(公告)日：2011-05-05

申请号：US12610148

申请日：2009-10-30

申请人： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

发明人： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

IPC分类号： H01L23/48 ,  H01L23/488 ,  H01L21/768

CPC分类号： H01L29/7809 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/06051 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

摘要翻译： 半导体器件（例如，倒装芯片）包括通过中间层与漏极接触分离的衬底层。 通过中间层的沟槽状馈通元件用于在器件工作时电连接漏极接触和衬底层。

公开(公告)号：US06709930B2

公开(公告)日：2004-03-23

申请号：US10176570

申请日：2002-06-21

申请人： Ben Chan ,  Kam Hong Lui ,  Christiana Yue ,  Ronald Wong ,  David Chang ,  Frederick P. Giles ,  Kyle Terrill ,  Mohamed N. Darwish ,  Deva Pattanayak ,  Robert Q. Xu ,  Kuo-in Chen

发明人： Ben Chan ,  Kam Hong Lui ,  Christiana Yue ,  Ronald Wong ,  David Chang ,  Frederick P. Giles ,  Kyle Terrill ,  Mohamed N. Darwish ,  Deva Pattanayak ,  Robert Q. Xu ,  Kuo-in Chen

IPC分类号： H01L21336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368

摘要： A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

摘要翻译： 通过在半导体衬底中形成沟槽，然后在沟槽的侧壁的一部分上形成阻挡层来形成沟槽MOSFET。 在沟槽的底部沉积厚的绝缘层。 选择阻挡层使得厚的绝缘层以比绝缘层沉积在阻挡层上更快的速率沉积在沟槽的底部。 本发明的实施例避免了与绝缘层的热生长相关的应力和可靠性问题，并且避免了当沉积厚绝缘层时遇到的厚绝缘层的形状和厚度的控制问题，然后蚀刻到适当的形状和厚度 。

公开(公告)号：US20090050960A1

公开(公告)日：2009-02-26

申请号：US12050929

申请日：2008-03-18

申请人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

发明人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC分类号： H01L27/088

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/781

摘要： Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

摘要翻译： 本发明的实施例涉及一种沟槽金属氧化物半导体场效应晶体管（TMOSFET）器件。 TMOSFET器件包括耦合到漏极侧栅极TMOSFET 1203的源极侧栅极TMOSFET。开关节点金属层将源极侧栅极TMOSFET的漏极耦合到漏极侧栅极TMOSFET的源极，因此 TMOSFET被封装成堆叠或横向设备。

公开(公告)号：US08183629B2

公开(公告)日：2012-05-22

申请号：US12050929

申请日：2008-03-18

申请人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

发明人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC分类号： H01L27/88

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/781

摘要： Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

摘要翻译： 本发明的实施例涉及一种沟槽金属氧化物半导体场效应晶体管（TMOSFET）器件。 TMOSFET器件包括耦合到漏极侧栅极TMOSFET 1203的源极侧栅极TMOSFET。开关节点金属层将源极侧栅极TMOSFET的漏极耦合到漏极侧栅极TMOSFET的源极，使得 TMOSFET被封装成堆叠或横向设备。

公开(公告)号：US07344945B1

公开(公告)日：2008-03-18

申请号：US11023327

申请日：2004-12-22

申请人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

发明人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/781

摘要： Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

摘要翻译： 本发明的实施例提供了一种条纹或闭孔沟槽金属氧化物半导体场效应晶体管（TMOSFET）。 条状或闭孔TMOSFET包括源极区域，设置在源极区域上方的体区域，设置在身体区域上方的漂移区域，设置在漂移区域上方的漏极区域。 栅极区域设置在源极区域的上方并与身体区域相邻。 栅极绝缘体区域将栅极区域与源极区域，体区域，漂移区域和漏极区域电隔离。 身体区域电耦合到源区域。

公开(公告)号：US06906380B1

公开(公告)日：2005-06-14

申请号：US10846339

申请日：2004-05-13

申请人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

发明人： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC分类号： H01L21/336 ,  H01L29/40 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/781

摘要： Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

摘要翻译： 本发明的实施例提供了一种条纹或闭孔沟槽金属氧化物半导体场效应晶体管（TMOSFET）。 条状或闭孔TMOSFET包括源极区域，设置在源极区域上方的体区域，设置在身体区域上方的漂移区域，设置在漂移区域上方的漏极区域。 栅极区域设置在源极区域的上方并与身体区域相邻。 栅极绝缘体区域将栅极区域与源极区域，体区域，漂移区域和漏极区域电隔离。 身体区域电耦合到源区域。

公开(公告)号：US20070284754A1

公开(公告)日：2007-12-13

申请号：US11799889

申请日：2007-05-02

申请人： Ronald Wong ,  Jason Qi ,  Kyle Terrill ,  Kuo-In Chen

发明人： Ronald Wong ,  Jason Qi ,  Kyle Terrill ,  Kuo-In Chen

IPC分类号： H01L23/532 ,  H01L21/441

CPC分类号： H01L21/76838 ,  H01L21/7684 ,  H01L23/53223 ,  H01L23/53266 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

摘要翻译： 一种结构包括形成在衬底中的半导体器件; 与半导体器件相邻的绝缘体; 电接触，电耦合到所述半导体器件，其中所述电接触包括钨; 以及耦合到所述电触点的电连接器，其中所述电连接器包括铝。 绝缘体的表面和电接触的表面形成基本均匀的表面。

公开(公告)号：US08471390B2

公开(公告)日：2013-06-25

申请号：US11799889

申请日：2007-05-02

申请人： Ronald Wong ,  Jason Qi ,  Kyle Terrill ,  Kuo-In Chen

发明人： Ronald Wong ,  Jason Qi ,  Kyle Terrill ,  Kuo-In Chen

IPC分类号： H01L23/48

CPC分类号： H01L21/76838 ,  H01L21/7684 ,  H01L23/53223 ,  H01L23/53266 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

摘要翻译： 一种结构包括形成在衬底中的半导体器件; 与半导体器件相邻的绝缘体; 电接触，电耦合到所述半导体器件，其中所述电接触包括钨; 以及耦合到所述电触点的电连接器，其中所述电连接器包括铝。 绝缘体的表面和电接触的表面形成基本均匀的表面。

公开(公告)号：US07126708B1

公开(公告)日：2006-10-24

申请号：US09945100

申请日：2001-08-31

申请人： Christopher E. McConn ,  Ronald Wong ,  John C. Marshall ,  Alvin Wang

发明人： Christopher E. McConn ,  Ronald Wong ,  John C. Marshall ,  Alvin Wang

IPC分类号： G06F15/00

CPC分类号： G06Q30/00

摘要： A system and business method for enabling photolabs to provide digital image processing services, and at the same time, to provide the photolabs with the ability to use their own branding in connection with their services and to the control of all business aspects of the service, including the creation of a customized website, digital image product offerings, branding, pricing, promotions, advertisements, and film prints and related image imprinted product fulfillment.

摘要翻译： 一种用于使photolabs能够提供数字图像处理服务的系统和业务方法，同时，为了使photolabs能够使用自己的品牌与其服务相关联并控制服务的所有业务方面， 包括创建定制网站，数字图像产品，品牌，定价，促销，广告，电影和相关图像印刷产品的实现。