公开(公告)号：US08382301B2

公开(公告)日：2013-02-26

申请号：US12403233

申请日：2009-03-12

申请人： Dirk Heinrich Ehm ,  Stephan Muellender ,  Thomas Stein ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dieter Kraus ,  Richard Versluis ,  Marcus Gerhardus Hendrikus Meijerink

发明人： Dirk Heinrich Ehm ,  Stephan Muellender ,  Thomas Stein ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dieter Kraus ,  Richard Versluis ,  Marcus Gerhardus Hendrikus Meijerink

IPC分类号： G02B5/08 ,  H01S3/22

CPC分类号： G03B27/16 ,  B82Y10/00 ,  G03F7/70841 ,  G03F7/70883 ,  G03F7/70916 ,  G21K2201/061

摘要： An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

公开(公告)号：US07671347B2

公开(公告)日：2010-03-02

申请号：US11544931

申请日：2006-10-10

申请人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Marcus Gerhardus Hendrikus Meijerink ,  Thomas Stein

发明人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Marcus Gerhardus Hendrikus Meijerink ,  Thomas Stein

IPC分类号： G21K5/00

CPC分类号： G03F7/70925

摘要： A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.

摘要翻译： 一种清洁装置的光学元件的方法，该装置被配置为将辐射束投影到基板的目标部分上，该装置包括依次布置在辐射束的路径中的多个光学元件，其中清洁 方法包括：清洁序列的一个或多个第二光学元件，其在装置的操作期间接收一个或多个相对较低的第二辐射剂量，利用比接收一个或多个序列的序列的一个或多个第一光学元件累积更短的清洁周期 在装置运行期间的第一辐射剂量，第二辐射剂量低于每个相对高的第一辐射剂量。

公开(公告)号：US20080083878A1

公开(公告)日：2008-04-10

申请号：US11544931

申请日：2006-10-10

申请人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Marcus Gerhardus Hendrikus Meijerink ,  Thomas Stein

发明人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Marcus Gerhardus Hendrikus Meijerink ,  Thomas Stein

IPC分类号： G01J1/42

CPC分类号： G03F7/70925

摘要： A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.

摘要翻译： 一种清洁装置的光学元件的方法，该装置被配置为将辐射束投影到基板的目标部分上，该装置包括依次布置在辐射束的路径中的多个光学元件，其中清洁 方法包括：清洁序列的一个或多个第二光学元件，其在装置的操作期间接收一个或多个相对较低的第二辐射剂量，利用比接收一个或多个序列的序列的一个或多个第一光学元件累积更短的清洁周期 在装置运行期间的第一辐射剂量，第二辐射剂量低于每个相对高的第一辐射剂量。

公开(公告)号：US20100288302A1

公开(公告)日：2010-11-18

申请号：US12662840

申请日：2010-05-06

申请人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

发明人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

IPC分类号： B08B7/00 ,  B08B5/02

CPC分类号： B08B5/02 ,  B08B7/00 ,  G03F7/70925

摘要： The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

摘要翻译： 本发明涉及通过使清洁气体与污染层接触来至少部分地从EUV反射型光学元件（14）的光学表面（14a）去除污染物层（15）的方法。 在该方法中，将清洁气体的喷嘴（20）引导到污染层（15），以从污染层（15）去除材料。 监测污染层（15）以产生指示污染层（15）的厚度的信号，并且通过相对于光学表面移动清洁气体的喷嘴（20）来控制清洁气体的喷射（20） 14a）使用该信号作为反馈信号。 还公开了一种用于执行该方法的清洁装置（19至24）。 本发明还涉及一种用于产生清洁气体的喷嘴（20）和相应的清洁气体产生装置的方法。

公开(公告)号：US20080143981A1

公开(公告)日：2008-06-19

申请号：US11854621

申请日：2007-09-13

申请人： Dirk Heinrich EHM ,  Annemieke van de Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

发明人： Dirk Heinrich EHM ,  Annemieke van de Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

IPC分类号： G03B27/52 ,  G21K5/00

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70891 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

摘要翻译： 一种用于EUV光刻的光学装置，特别是投影系统，照明系统或光束整形系统，包括布置在光学装置的光束路径中并且反射软X射线或EUV中的辐射的至少一个光学元件 波长范围，其中至少在所述光学装置的操作期间，所述光束路径中至少在所述光学表面处的所述反射光学元件中的至少一个优选地各自具有大约30℃或更高的工作温度， 优选为约100℃以上，特别优选为约150℃以上，甚至更优选为约250℃以上，并且其中选择所述至少一个反射型光学元件的光学设计 其光学特性被优化以在操作温度下操作。 还提出了一种用于提供具有这种光学设计的反射光学元件的方法。

公开(公告)号：US08419862B2

公开(公告)日：2013-04-16

申请号：US12662840

申请日：2010-05-06

申请人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

发明人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

IPC分类号： B08B5/00 ,  A47L5/05

CPC分类号： B08B5/02 ,  B08B7/00 ,  G03F7/70925

摘要： The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

摘要翻译： 本发明涉及通过使清洁气体与污染层接触来至少部分地从EUV反射型光学元件（14）的光学表面（14a）去除污染物层（15）的方法。 在该方法中，将清洁气体的喷嘴（20）引导到污染层（15），以从污染层（15）去除材料。 监测污染层（15）以产生指示污染层（15）的厚度的信号，并且通过相对于光学表面移动清洁气体的喷嘴（20）来控制清洁气体的喷射（20） 14a）使用该信号作为反馈信号。 还公开了一种用于执行该方法的清洁装置（19至24）。 本发明还涉及一种用于产生清洁气体的喷嘴（20）和相应的清洁气体产生装置的方法。

公开(公告)号：US07959310B2

公开(公告)日：2011-06-14

申请号：US11854621

申请日：2007-09-13

申请人： Dirk Heinrich Ehm ,  Annemieke Van De Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. Van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

发明人： Dirk Heinrich Ehm ,  Annemieke Van De Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. Van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

IPC分类号： G02B5/08 ,  G02B7/182 ,  G06K7/10

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70891 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

摘要翻译： 一种用于EUV光刻的光学装置，特别是投影系统，照明系统或光束整形系统，包括布置在光学装置的光束路径中并且反射软X射线或EUV中的辐射的至少一个光学元件 波长范围，其中至少在所述光学装置的操作期间，所述光束路径中至少在所述光学表面处的所述反射光学元件中的至少一个优选地各自具有大约30℃或更高的工作温度， 优选为约100℃以上，特别优选为约150℃以上，甚至更优选为约250℃以上，并且其中选择所述至少一个反射型光学元件的光学设计 其光学特性被优化以在操作温度下操作。 还提出了一种用于提供具有这种光学设计的反射光学元件的方法。

公开(公告)号：US07928412B2

公开(公告)日：2011-04-19

申请号：US12405831

申请日：2009-03-17

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。

公开(公告)号：US07629594B2

公开(公告)日：2009-12-08

申请号：US11544930

申请日：2006-10-10

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。

公开(公告)号：US20080083885A1

公开(公告)日：2008-04-10

申请号：US11544930

申请日：2006-10-10

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anton Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anton Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00 ,  G21G4/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。