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公开(公告)号：US20100315787A1
公开(公告)日：2010-12-16
申请号：US12860811
申请日：2010-08-20
申请人： Ming Li , Donald R. Mullen
发明人： Ming Li , Donald R. Mullen
IPC分类号： H05K7/20
CPC分类号： H01L23/3677 , H01L23/4093 , H01L23/427 , H01L25/0652 , H01L2224/16225 , H01L2224/48227 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/15311 , H01L2924/15321 , H05K1/0206 , H05K1/141 , H05K2201/066 , H05K2201/10371 , H05K2203/1572 , H01L2224/0401
摘要： A system includes a circuit board, a multi-die package, and a heat dissipator. The circuit board has substantially planar opposing first and second sides. The multi-die package includes a substrate and a first set of one or more semiconductor devices on a first substrate side and a second set of one or more semiconductor devices on a second substrate side. The multi-die package is located at the first circuit board side. The heat dissipator is located at the second circuit board side, and thermally coupled to the second set of semiconductor devices. One or more portions of the circuit board are removed between the first circuit board side and the second circuit board side so as to define one or more holes through the circuit board and to facilitate thermal coupling between the second set of semiconductor devices and the heat dissipator through the one or more holes.
摘要翻译： 一种系统包括电路板，多管芯封装和散热器。 电路板具有大致相对的第一和第二侧面。 所述多管芯封装包括衬底和第一组第一衬底侧上的一个或多个半导体器件以及在第二衬底侧上的第二组一个或多个半导体器件。 多模封装位于第一电路板侧。 散热器位于第二电路板侧，并且热耦合到第二组半导体器件。 在第一电路板侧和第二电路板侧之间移除电路板的一个或多个部分，以便限定通过电路板的一个或多个孔，并且促进第二组半导体器件与散热器之间的热耦合 通过一个或多个孔。
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2.发明申请Method and Apparatus to Repair Defects in Nonvolatile Semiconductor Memory Devices 有权修复非易失性半导体存储器件缺陷的方法和装置公开(公告)号：US20100230807A1
公开(公告)日：2010-09-16
申请号：US12676594
申请日：2008-09-04
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.
摘要翻译： 一种修复非易失性半导体存储器件以消除缺陷的方法包括监测包含在半导体封装中的非易失性半导体存储器件的存储器耐久性指示器。 确定记忆耐力指示符是否超过预定义的限制。 最后，响应于确定存储器耐力指示符超出预定义的限制，器件被退火。
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公开(公告)号：US08415788B2
公开(公告)日：2013-04-09
申请号：US12860811
申请日：2010-08-20
申请人： Ming Li , Donald R. Mullen
发明人： Ming Li , Donald R. Mullen
IPC分类号： H05K7/20
CPC分类号： H01L23/3677 , H01L23/4093 , H01L23/427 , H01L25/0652 , H01L2224/16225 , H01L2224/48227 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/15311 , H01L2924/15321 , H05K1/0206 , H05K1/141 , H05K2201/066 , H05K2201/10371 , H05K2203/1572 , H01L2224/0401
摘要： A system includes a circuit board, a multi-die package, and a heat dissipator. The circuit board has substantially planar opposing first and second sides. The multi-die package includes a substrate and a first set of one or more semiconductor devices on a first substrate side and a second set of one or more semiconductor devices on a second substrate side. The multi-die package is located at the first circuit board side. The heat dissipator is located at the second circuit board side, and thermally coupled to the second set of semiconductor devices. One or more portions of the circuit board are removed between the first circuit board side and the second circuit board side so as to define one or more holes through the circuit board and to facilitate thermal coupling between the second set of semiconductor devices and the heat dissipator through the one or more holes.
摘要翻译： 一种系统包括电路板，多管芯封装和散热器。 电路板具有大致相对的第一和第二侧面。 所述多管芯封装包括衬底和第一组第一衬底侧上的一个或多个半导体器件以及在第二衬底侧上的第二组一个或多个半导体器件。 多模封装位于第一电路板侧。 散热器位于第二电路板侧，并且热耦合到第二组半导体器件。 在第一电路板侧和第二电路板侧之间移除电路板的一个或多个部分，以便限定通过电路板的一个或多个孔，并且促进第二组半导体器件与散热器之间的热耦合 通过一个或多个孔。
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公开(公告)号：US07538424B2
公开(公告)日：2009-05-26
申请号：US10888907
申请日：2004-07-08
申请人： Donald R. Mullen , Ming Li
发明人： Donald R. Mullen , Ming Li
IPC分类号： H01L23/34
CPC分类号： H05K1/0206 , H01L23/3677 , H01L2224/32225 , H05K1/141 , H05K2201/066 , H05K2201/10371 , H05K2203/1572
摘要： The system includes a circuit board, a semiconductor module, a heat dissipator, and at least one thermal via. The circuit board has substantially flat opposing first and second sides. The semiconductor module includes multiple semiconductor devices. The semiconductor module is oriented substantially parallel to the circuit board near the first side, while the heat dissipator is disposed near the second side. The thermal via extends through the circuit board to thermally couple the semiconductor module to the heat dissipator, which may be a heat spreader, heat sink, cooling fan, or heat pipe.
摘要翻译： 该系统包括电路板，半导体模块，散热器和至少一个热通孔。 电路板具有基本平坦的相对的第一和第二侧面。 半导体模块包括多个半导体器件。 半导体模块在第一侧附近基本上平行于电路板取向，而散热器设置在第二侧附近。 热通孔延伸穿过电路板，以将半导体模块热耦合到散热器，散热器可以是散热器，散热器，冷却风扇或热管。
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公开(公告)号：US20120236668A1
公开(公告)日：2012-09-20
申请号：US13486977
申请日：2012-06-01
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A memory module includes multiple memory devices mounted to a substrate and one or more discrete heating elements disposed in thermal contact with the memory devices. Each of the memory devices includes charge-storing memory cells subject to operation-induced defects that degrade ability of the memory cells to store data. The discrete heating elements, or single discrete heating element, heats the memory devices to a temperature that anneals the defects.
摘要翻译： 存储器模块包括安装到基板的多个存储器件和与存储器件热接触地设置的一个或多个分立加热元件。 每个存储器件包括经受操作引起的缺陷的电荷存储存储单元，其使存储器单元存储数据的能力降低。 离散加热元件或单独的分立加热元件将存储器件加热到退火缺陷的温度。
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6.发明授权Repairing defects in a nonvolatile semiconductor memory device utilizing a heating element 有权利用加热元件修复非易失性半导体存储器件中的缺陷公开(公告)号：US08193573B2
公开(公告)日：2012-06-05
申请号：US12676594
申请日：2008-09-04
IPC分类号： H01L29/76 , H01L21/8238
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.
摘要翻译： 一种修复非易失性半导体存储器件以消除缺陷的方法包括监测包含在半导体封装中的非易失性半导体存储器件的存储器耐久性指示器。 确定记忆耐力指示符是否超过预定义的限制。 最后，响应于确定存储器耐久性指示符超出预定义的限制，器件被退火。
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公开(公告)号：US08039952B2
公开(公告)日：2011-10-18
申请号：US12472340
申请日：2009-05-26
申请人： Donald R. Mullen , Ming Li
发明人： Donald R. Mullen , Ming Li
IPC分类号： H05K7/20
CPC分类号： H05K1/0206 , H01L23/3677 , H01L2224/32225 , H05K1/141 , H05K2201/066 , H05K2201/10371 , H05K2203/1572
摘要： The system includes a circuit board, a semiconductor module, a heat dissipator, and at least one thermal via. The circuit board has substantially flat opposing first and second sides. The semiconductor module includes multiple semiconductor devices. The semiconductor module is oriented substantially parallel to the circuit board near the first side, while the heat dissipator is disposed near the second side. The thermal via extends through the circuit board to thermally couple the semiconductor module to the heat dissipator, which may be a heat spreader, heat sink, cooling fan, or heat pipe.
摘要翻译： 该系统包括电路板，半导体模块，散热器和至少一个热通孔。 电路板具有基本平坦的相对的第一和第二侧面。 半导体模块包括多个半导体器件。 半导体模块在第一侧附近基本上平行于电路板取向，而散热器设置在第二侧附近。 热通孔延伸穿过电路板，以将半导体模块热耦合到散热器，散热器可以是散热器，散热器，冷却风扇或热管。
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公开(公告)号：US20090316366A1
公开(公告)日：2009-12-24
申请号：US12472340
申请日：2009-05-26
申请人： Donald R. Mullen , Ming Li
发明人： Donald R. Mullen , Ming Li
IPC分类号： H05K7/20
CPC分类号： H05K1/0206 , H01L23/3677 , H01L2224/32225 , H05K1/141 , H05K2201/066 , H05K2201/10371 , H05K2203/1572
摘要： The system includes a circuit board, a semiconductor module, a heat dissipator, and at least one thermal via. The circuit board has substantially flat opposing first and second sides. The semiconductor module includes multiple semiconductor devices. The semiconductor module is oriented substantially parallel to the circuit board near the first side, while the heat dissipator is disposed near the second side. The thermal via extends through the circuit board to thermally couple the semiconductor module to the heat dissipator, which may be a heat spreader, heat sink, cooling fan, or heat pipe.
摘要翻译： 该系统包括电路板，半导体模块，散热器和至少一个热通孔。 电路板具有基本平坦的相对的第一和第二侧面。 半导体模块包括多个半导体器件。 半导体模块在第一侧附近基本上平行于电路板取向，而散热器设置在第二侧附近。 热通孔延伸穿过电路板，以将半导体模块热耦合到散热器，散热器可以是散热器，散热器，冷却风扇或热管。
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公开(公告)号：US20080150123A1
公开(公告)日：2008-06-26
申请号：US12044828
申请日：2008-03-07
申请人： Ming Li , Sayeh Khalili , Donald R. Mullen
发明人： Ming Li , Sayeh Khalili , Donald R. Mullen
IPC分类号： H01L23/12
CPC分类号： H01L23/4985 , H01L23/49833 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2223/6688 , H01L2224/04042 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2924/00014 , H01L2924/01079 , H01L2924/07811 , H01L2924/14 , H01L2924/15311 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： The semiconductor package includes a rigid circuit board substrate having a substrate first side and an opposing substrate second side. The package also includes multiple electrical contacts coupled to the substrate at the substrate first side. An adhesive directly contacts the substrate second side. A semiconductor device directly contacts the adhesive. At least one flexible conductor is electrically connected to the semiconductor device and to at least one of the electrical contacts. The flexible conductor extends from the first side to the second side of the substrate.
摘要翻译： 半导体封装包括具有衬底第一侧和相对衬底第二侧的刚性电路板衬底。 封装还包括在衬底第一侧耦合到衬底的多个电触点。 粘合剂直接接触基板第二面。 半导体器件直接接触粘合剂。 至少一个柔性导体电连接到半导体器件和至少一个电触头。 柔性导体从衬底的第一侧延伸到第二侧。
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10.发明授权Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element 失效利用加热元件修复非易失性半导体存储器模块中的缺陷公开(公告)号：US08497544B2
公开(公告)日：2013-07-30
申请号：US13486977
申请日：2012-06-01
IPC分类号： H01L29/76 , H01L21/8238
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A memory module includes multiple memory devices mounted to a substrate and one or more discrete heating elements disposed in thermal contact with the memory devices. Each of the memory devices includes charge-storing memory cells subject to operation-induced defects that degrade ability of the memory cells to store data. The discrete heating elements, or single discrete heating element, heats the memory devices to a temperature that anneals the defects.
摘要翻译： 存储器模块包括安装到基板的多个存储器件和与存储器件热接触地设置的一个或多个分立加热元件。 每个存储器件包括经受操作引起的缺陷的电荷存储存储单元，其使存储器单元存储数据的能力降低。 离散加热元件或单独的分立加热元件将存储器件加热到退火缺陷的温度。
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