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公开(公告)号：US4984242A
公开(公告)日：1991-01-08
申请号：US408675
申请日：1989-09-18
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/34313 , H01S5/0021 , H01S5/305 , H01S5/3201 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S5/3432
摘要： GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance.
摘要翻译： GaAs / AlGaAs异质结构激光器，其在除活性区以外的至少一层中含有铟。 描述了以低浓度添加到包层的铟来匹配包层和有源层之间的晶格常数的实施例，其中以高浓度添加铟以形成应变层，以防止通过其中的缺陷迁移，并且如果接近有源区 降低透明度电流并增加微分增益，其中铟均匀地添加到所有层以抑制缺陷形成，并且其中将铟添加到覆盖层以降低金属化接触电阻。
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公开(公告)号：US5048036A
公开(公告)日：1991-09-10
申请号：US638358
申请日：1991-01-04
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/34313 , H01S5/0021 , H01S5/305 , H01S5/3201 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S5/3432
摘要： Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.
摘要翻译： 半导体异质结构激光器在接近有源区域的包层中具有至少一个晶格失配的应变层。 可以以高浓度加入铟或磷以形成应变层。 应变层可以与有源区域稍微间隔开，或者可以与有源区域相邻。 在任一情况下，应变层降低透明度电流并增加微分增益。
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公开(公告)号：US5657153A
公开(公告)日：1997-08-12
申请号：US408030
申请日：1995-03-21
CPC分类号： H04B10/291 , H04B10/2912 , H01S3/005 , H01S3/06712 , H01S3/06754 , H01S3/10015 , H01S3/2383 , H01S5/06216 , H01S5/4087
摘要： In an optical transmission medium, such as a fiber amplifier, two optically distinguishable signals with complementary modulation are both inputted into the amplifying medium for encoding information, particularly a serial stream of digital data, or alternatively, redundant encoding of pulses. The gain profile in the medium is preferably maintained approximately constant at all times, so that whichever amplified signal is used as the primary information carrier, its output intensity will be substantially stable from pulse to pulse, independent of recent pulse history. The two complementary signals may have different orthogonal linear polarizations or wavelengths with the same stimulated emission cross-section, so that the population inversion profile stays constant, whichever signal happens to be on at a given moment. The two signals may be derived from separate intensity modulated laser diode signal sources, from a single laser diode signal source switched between two emission wavelengths, or from a single laser diode with constant emission coupled to a directional coupler directing two complementary polarized light signals into the fiber amplifying medium.
摘要翻译： 在诸如光纤放大器的光传输介质中，具有互补调制的两个光学可区分信号都被输入到用于对信息进行编码的放大媒体，特别是串行数字数据流，或备选地，脉冲的冗余编码。 介质中的增益分布优选总是保持近似恒定，因此无论使用哪个放大信号作为主信息载体，其输出强度将基本上与脉冲相比稳定，与最近的脉冲历史无关。 两个互补信号可以具有不同的具有相同受激发射横截面的正交线性偏振或波长，使得群体反转谱保持恒定，无论哪个信号在给定时刻发生什么信号。 两个信号可以从单独的强度调制的激光二极管信号源获得，来自在两个发射波长之间切换的单个激光二极管信号源，或者来自具有恒定发射的单个激光二极管耦合到定向耦合器，其将两个互补偏振光信号引入到 光纤放大介质。
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公开(公告)号：US4972427A
公开(公告)日：1990-11-20
申请号：US407206
申请日：1989-09-14
CPC分类号： H01S5/148 , H01S5/4062 , G02B6/2813
摘要： A diode laser of the type having an array of laser emitters in a Talbot cavity in which edge reflectors are added to enhance feedback to edgemost emitters. In one embodiment, a transparent slab with reflectively coated sides is present between the phase plane of the emitted light and the Talbot cavity reflector. The phase plne is defined by a lenticular array placed a focal length in front of the laser emitters. In another embodiment, the Talbot cavity reflector has an increased reflectivity toward its edges. In all embodiments the Talbot cavity reflector is preferably spaced a distance na.sup.2 /.lambda. from the phase plane, where n is a positive integer, a is separation between adjacent emitters and .lambda. is the wavelength of emitted light. An integrated embodiment has the array and cavity reflectors defined ina single semiconductor body divided into active and ransparent region. Side mirrors are etched into the semiconductor body. The laser array may also be extended to two dimensions with individual lasers or laser bars fiber coupled to a lens surface, with an edge reflector and Talbot cavity reflector coated on an otherwise transparent slab.
摘要翻译： 在Talbot腔中具有激光发射器阵列的类型的二极管激光器，其中添加边缘反射器以增强对edgemost发射体的反馈。 在一个实施例中，在发射光的相平面和Talbot腔反射器之间存在具有反射涂覆侧面的透明板。 相位斑点由在激光发射器前面放置焦距的透镜阵列限定。 在另一个实施例中，Talbot腔反射器对其边缘具有增加的反射率。 在所有实施例中，Talbot空腔反射器优选与相平面间隔距离为na2 /λ，其中n为正整数，a为相邻发射体之间的间隔，λ为发射光的波长。 集成实施例具有被划分为活性和透明区域的单个半导体主体中限定的阵列和空腔反射器。 侧镜被蚀刻到半导体本体中。 激光器阵列也可以扩展到二维，其中单独的激光器或激光棒纤维耦合到透镜表面，边缘反射器和Talbot腔体反射器涂覆在另外透明的平板上。
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公开(公告)号：US5219785A
公开(公告)日：1993-06-15
申请号：US557901
申请日：1990-07-25
CPC分类号： H01S5/20 , H01S5/2059 , H01S5/2063 , H01S5/2205 , H01S5/2231 , H01S5/4031 , Y10S148/095
摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.
摘要翻译： 一种使用植入来形成具有电流阻挡植入物的半导体激光器或激光器阵列的方法。 形成包括第一导电类型，有源区和第二导电类层的半导体材料激光结构。 在第一实施例中，将第二导电类型的杂质离子注入到第一导电类型层的选定区域中。 注入的离子形成具有第二导电类型的电流阻挡掩埋区域，其间具有电流限制通道。 最后，结构热退火。 在第二个实施方案中，可能是可饱和吸收剂的无序感染杂质通过有源区扩散到第一导电类型的层的选定部分。 扩散将这些层的侧面区域转换成第二导电类型。 将第一导电类型的杂质离子注入穿过侧面区域的均匀深度，以形成第一导电类型的掩埋区域。 电流局限于中心未扩散区域。 最后，结构是热退火的。 还描述了具有单独可寻址的导电触点的激光器阵列。 离子轰击用于产生绝缘表面区域以将相邻的触点彼此隔离。
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公开(公告)号：US5193098A
公开(公告)日：1993-03-09
申请号：US935475
申请日：1992-08-24
CPC分类号： H01S5/20 , H01S5/2059 , H01S5/2063 , H01S5/2205 , H01S5/2231 , H01S5/4031
摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.
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7.发明授权
公开(公告)号：US5088105A
公开(公告)日：1992-02-11
申请号：US675432
申请日：1991-03-26
CPC分类号： H01S5/50 , H01S5/06243 , H01S5/10 , H01S5/1085 , H01S5/1243 , H01S5/4031
摘要： An optical amplifier having one or more amplifier regions with a noncollinear light path provided by curved or folded waveguides therein between input, output and reflective surfaces provided, for example, by a low reflectivity front facet and a high reflectivity rear facet. The amplifier regions are electrically pumped via conductive contacts which may be individually addressable for each amplifier region to provide phase control of the array of emitted light. Light is accepted through the front facet by a first amplifier region, is reflected from the rear facet and is emitted through the front facet. If there are multiple amplifier regions, a portion of the light is reflected by the front facet into an adjacent amplifier region. The light path is incident on the front and rear facets at an angle other than normal thereto and preferably at most 10.degree. from normal. The light source may be a laser diode which can be monolithically integrated on the same substrate as the amplifier to form a master oscillator power amplifier (MOPA) device. The laser can be wavelength tunable. The MOPA can also have a steerable output beam.
摘要翻译： 具有一个或多个具有非直线光路的放大器区域的光放大器区域，其通过弯曲或折叠波导在输入，输出和反射表面之间提供，例如由低反射率正面和高反射率后面提供。 放大器区域经由导电触点电泵浦，该触点可以对于每个放大器区域可单独寻址以提供发射光阵列的相位控制。 光通过第一放大器区域的前面被接受，从后面被反射并通过前面被发射。 如果存在多个放大器区域，则一部分光被前端面反射成相邻的放大器区域。 光路以与其正常不同的角度入射在前面和后面上，优选地与正常情况相比最多为10°。 光源可以是可以与放大器单片集成在同一衬底上的激光二极管，以形成主振荡器功率放大器（MOPA）器件。 激光可以波长可调。 MOPA也可以有一个可控的输出光束。
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公开(公告)号：US5103456A
公开(公告)日：1992-04-07
申请号：US559648
申请日：1990-07-30
CPC分类号： H01S5/026 , H01S5/4031 , H01S5/50
摘要： An integrated master oscillator/power amplifier semiconduction device having a laser diode oscillator, a broad area light amplifier and a coupling grating disposed to deflect light at an angle from the laser oscillator to the light amplifier. The amplifier may terminate as an output facet or use a grating surface emitter to couple amplified light out of the device. The orientation angle and grating period of the coupling grating are chosen to minimize feedback from the amplifier into the laser. This is achieved either by deflecting the light by other than a 90.degree. angle or by orienting the grating at other than 45.degree. with respect to laser even though light is deflected by 90.degree. so that any return light effectively "sees" a different grating. The laser can be a DFB or DBR laser and can be wavelength tunable.
摘要翻译： 一种具有激光二极管振荡器，广域光放大器和耦合光栅的集成主振荡器/功率放大器半导体器件，其设置成将光从激光振荡器偏转到光放大器。 放大器可以终止为输出小面或使用光栅表面发射器将放大的光耦合到设备外。 选择耦合光栅的取向角和光栅周期以最小化从放大器到激光器的反馈。 这可以通过将光偏转90°以外，或通过将光栅相对于激光定向45°以外的方式实现，即使光被偏转90°，使得任何返回光有效地“看到”不同的光栅。 激光器可以是DFB或DBR激光器，可以是波长可调谐的。
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公开(公告)号：US06275632B1
公开(公告)日：2001-08-14
申请号：US09724106
申请日：2000-11-25
申请人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
发明人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
IPC分类号： G02B634
CPC分类号： G02B6/29319 , H01S3/067 , H01S3/0675 , H01S3/094015 , H01S3/2383 , H01S3/2391 , H01S3/30 , H01S3/302 , H01S5/146 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H04B10/291
摘要： Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.
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公开(公告)号：US6100546A
公开(公告)日：2000-08-08
申请号：US908766
申请日：1997-08-07
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
IPC分类号： C23C16/30 , H01L33/32 , H01S5/323 , H01L33/00 , H01L31/0304
CPC分类号： H01S5/3235 , C23C16/303 , C30B25/02 , C30B29/40 , H01L33/32 , H01S5/32 , H01S5/323 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译： 公开了III-V族氮化物半导体。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V材料中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光以及中红外和近紫外线发射体的材料。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V材料的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。
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