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公开(公告)号：US4984242A
公开(公告)日：1991-01-08
申请号：US408675
申请日：1989-09-18
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/34313 , H01S5/0021 , H01S5/305 , H01S5/3201 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S5/3432
摘要： GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance.
摘要翻译： GaAs / AlGaAs异质结构激光器，其在除活性区以外的至少一层中含有铟。 描述了以低浓度添加到包层的铟来匹配包层和有源层之间的晶格常数的实施例，其中以高浓度添加铟以形成应变层，以防止通过其中的缺陷迁移，并且如果接近有源区 降低透明度电流并增加微分增益，其中铟均匀地添加到所有层以抑制缺陷形成，并且其中将铟添加到覆盖层以降低金属化接触电阻。
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公开(公告)号：US4972427A
公开(公告)日：1990-11-20
申请号：US407206
申请日：1989-09-14
CPC分类号： H01S5/148 , H01S5/4062 , G02B6/2813
摘要： A diode laser of the type having an array of laser emitters in a Talbot cavity in which edge reflectors are added to enhance feedback to edgemost emitters. In one embodiment, a transparent slab with reflectively coated sides is present between the phase plane of the emitted light and the Talbot cavity reflector. The phase plne is defined by a lenticular array placed a focal length in front of the laser emitters. In another embodiment, the Talbot cavity reflector has an increased reflectivity toward its edges. In all embodiments the Talbot cavity reflector is preferably spaced a distance na.sup.2 /.lambda. from the phase plane, where n is a positive integer, a is separation between adjacent emitters and .lambda. is the wavelength of emitted light. An integrated embodiment has the array and cavity reflectors defined ina single semiconductor body divided into active and ransparent region. Side mirrors are etched into the semiconductor body. The laser array may also be extended to two dimensions with individual lasers or laser bars fiber coupled to a lens surface, with an edge reflector and Talbot cavity reflector coated on an otherwise transparent slab.
摘要翻译： 在Talbot腔中具有激光发射器阵列的类型的二极管激光器，其中添加边缘反射器以增强对edgemost发射体的反馈。 在一个实施例中，在发射光的相平面和Talbot腔反射器之间存在具有反射涂覆侧面的透明板。 相位斑点由在激光发射器前面放置焦距的透镜阵列限定。 在另一个实施例中，Talbot腔反射器对其边缘具有增加的反射率。 在所有实施例中，Talbot空腔反射器优选与相平面间隔距离为na2 /λ，其中n为正整数，a为相邻发射体之间的间隔，λ为发射光的波长。 集成实施例具有被划分为活性和透明区域的单个半导体主体中限定的阵列和空腔反射器。 侧镜被蚀刻到半导体本体中。 激光器阵列也可以扩展到二维，其中单独的激光器或激光棒纤维耦合到透镜表面，边缘反射器和Talbot腔体反射器涂覆在另外透明的平板上。
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公开(公告)号：US5219785A
公开(公告)日：1993-06-15
申请号：US557901
申请日：1990-07-25
CPC分类号： H01S5/20 , H01S5/2059 , H01S5/2063 , H01S5/2205 , H01S5/2231 , H01S5/4031 , Y10S148/095
摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.
摘要翻译： 一种使用植入来形成具有电流阻挡植入物的半导体激光器或激光器阵列的方法。 形成包括第一导电类型，有源区和第二导电类层的半导体材料激光结构。 在第一实施例中，将第二导电类型的杂质离子注入到第一导电类型层的选定区域中。 注入的离子形成具有第二导电类型的电流阻挡掩埋区域，其间具有电流限制通道。 最后，结构热退火。 在第二个实施方案中，可能是可饱和吸收剂的无序感染杂质通过有源区扩散到第一导电类型的层的选定部分。 扩散将这些层的侧面区域转换成第二导电类型。 将第一导电类型的杂质离子注入穿过侧面区域的均匀深度，以形成第一导电类型的掩埋区域。 电流局限于中心未扩散区域。 最后，结构是热退火的。 还描述了具有单独可寻址的导电触点的激光器阵列。 离子轰击用于产生绝缘表面区域以将相邻的触点彼此隔离。
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公开(公告)号：US5193098A
公开(公告)日：1993-03-09
申请号：US935475
申请日：1992-08-24
CPC分类号： H01S5/20 , H01S5/2059 , H01S5/2063 , H01S5/2205 , H01S5/2231 , H01S5/4031
摘要： A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is formed. In a first embodiment, impurity ions of the second conductivity type are implanted into selected regions of a first conductivity type layer. The implanted ions form current blocking buried regions of the second conductivity type with current confining channels therebetween. Finally, the structure is thermally annealed. In a second embodiment, a disorder inducing impurity, which may be a saturable absorber, is diffused into selected portions of the layers of the first conductivity type through the active region. The diffusion converts side regions of those layers into the second conductivity type. Impurity ions of the first conductivity type are implanted to a uniform depth crossing through the side regions to form a buried region of the first conductivity type. Current is confined to the center undiffused region. Last, the structure is thermally annealed. A laser array with individually addressable conductive contacts is also described. Ion bombardment is used to create insulative surface regions to isolate adjacent contacts from one another.
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公开(公告)号：US4862802A
公开(公告)日：1989-09-05
申请号：US217551
申请日：1988-07-11
IPC分类号： F42B3/113
CPC分类号： F42B3/113
摘要： A pyrotechnic ignition method in which a semiconductor laser bar or bars containing a number of independent laser array sources deliver optical power in a specified sequence through optical fibers to a set of pyrotechnic elements in order to initiate a sequence of pyrotechnic events, such as a fireworks display, building demolition, emergency ejection sequence, satellite launch, etc. A command signal is transmitted and received, typically by a remote station from the user. The signal is decoded to generate a set of electrical signals representing addresses of individual laser arrays on the laser bar. The laser arrays are activated in the desired sequence in response to the set of electrical signals and emit laser light. This light is transmitted along optical fibers coupled to the individual laser arrays and terminating in pyrotechnic elements. The pyrotechnic elements are ignited in response to optical power received from the optical fibers, typically by direct heating of a detonator. The detonator may also be ignited photochemically or by electric current produced by a photoelectric sensor in response to sensing of the laser light.
摘要翻译： 一种烟火点火方法，其中包含多个独立的激光阵列源的半导体激光棒或条以规定的顺序通过光纤将光功率提供给一组烟火元件，以便启动烟火事件序列，例如烟火 显示，建筑拆除，紧急排放顺序，卫星发射等。通常由用户的远程站发送和接收命令信号。 信号被解码以产生一组电信号，其表示激光条上各个激光阵列的地址。 响应于该组电信号而激光阵列以期望的顺序被激活并发射激光。 该光沿着耦合到各个激光器阵列的光纤传输并且终止于烟火元件。 烟火元件响应于通过直接加热雷管而从光纤接收的光功率点燃。 响应于对激光的感测，雷管也可以光化学地或由光电传感器产生的电流点燃。
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公开(公告)号：US4718069A
公开(公告)日：1988-01-05
申请号：US924195
申请日：1986-10-27
CPC分类号： H01S5/16 , H01S5/4068
摘要： A semiconductor laser array having a single lobe far field intensity pattern radiating normal to the laser's light emitting facet. The laser array has a plurality of semiconductor layers disposed over a substrate, at least one of the layers forming an active region for lightwave generation and propagation under lasing conditions. A plurality of adjacent spaced apart optical waveguides defined by waveguides and interconnecting waveguides directly couples lightwaves propagating in each waveguide into an adjacent waveguide. The waveguides are characterized by separations which are not equal at the light emitting facet but are selectively varied so that the sampling function has only a single central lobe. In the preferred embodiment, separations are greatest for edge located and smallest for centrally located waveguides. Interconnecting waveguides connect adjacent waveguides at respective Y-shaped junctions, the junctions being symmetric at least on the output side of the laser.
摘要翻译： 一种半导体激光器阵列，其具有垂直于激光器的发光小面辐射的单波瓣远场强度图案。 激光器阵列具有设置在衬底上的多个半导体层，所述层中的至少一个在激光条件下形成用于光波生成和传播的有源区域。 由波导和互连波导限定的多个相邻间隔开的光波导直接将在每个波导中传播的光波耦合到相邻波导中。 波导的特征在于在发光小面处不相等但是选择性地变化的分离，使得采样函数仅具有单个中心波瓣。 在优选实施例中，对于位于中心的波导的边缘定位和最小的间隔最大。 互连波导在相应的Y形结处连接相邻的波导，该结至少在激光器的输出侧是对称的。
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公开(公告)号：USRE31806E
公开(公告)日：1985-01-15
申请号：US473304
申请日：1983-03-08
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.
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公开(公告)号：US4293826A
公开(公告)日：1981-10-06
申请号：US34237
申请日：1979-04-30
IPC分类号： H01L31/12 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/0683 , H01S5/18 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4025 , H01S5/02252 , H01S5/005 , H01S5/02284 , H01S5/02292 , H01S5/0683
摘要： A semiconductor injection laser is mounted on a silicon substrate. An optical detector is integral to the substrate and aligned at oblique angles relative to the path of the light from one of the light emitting facets of the laser. The detector may be connected to the current control circuit for the laser to provide a feedback signal which is proportional to the light deflected from the facet. The transversely disposed detector may also function to detect light from another source as part of an optical communication system. The detector may be a Schottky barrier or a p-n junction.
摘要翻译： 半导体注入激光器安装在硅衬底上。 光学检测器与衬底成一体并且相对于来自激光器的一个发光小面的光的路径以倾斜角对准。 检测器可以连接到用于激光器的电流控制电路，以提供与从小面偏转的光成正比的反馈信号。 横向布置的检测器还可以用于检测来自另一个源的光作为光通信系统的一部分。 检测器可以是肖特基势垒或p-n结。
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公开(公告)号：US4219785A
公开(公告)日：1980-08-26
申请号：US918740
申请日：1978-06-26
CPC分类号： H01S5/4068 , H01S5/0425 , H01S5/06243 , H01S5/4075
摘要： A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherent radiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and means associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80 A can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths.
摘要翻译： 一种移动干涉条纹图案类型的光束扫描器，其包括具有相干辐射源的半导体材料体，以及用于沿光学非耦合的多个空间位移路径引导相干辐射的波导，以及与空间相关联的装置 用于在不同路径中的辐射之间产生相对相位变化的偏移路径，由此在远场中的干涉条纹被空间扫描。 此外，可以实现在大约80A范围内的激光器的波长调制。 相干辐射的源可以是单个激光器或多个光学耦合的激光器，并且光学解耦可以通过路径的空间位移或通过在路径之间插入高损耗介质来实现。
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10.发明授权
公开(公告)号：US4185256A
公开(公告)日：1980-01-22
申请号：US869190
申请日：1978-01-13
CPC分类号： H01L33/0025 , H01S5/10 , H01S5/1032 , H01S5/0654 , H01S5/1021 , H01S5/2235 , H01S5/4031
摘要： Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.
摘要翻译： 可以通过在制造期间在激光基板上采用台面结构来实现纵向和基本横向模式的模式控制。 台面将提供可以在台面形成的基板上制造的一个或多个异质结构波导层的厚度的显着变化。 结果，每个波导层的等效折射率将是不同的。 对于纵向模式操作，由于在基板上形成的台面的存在，可以在优先LPE生长期间直接制造分支定向耦合器。 对于基本横向模式操作，由于在活性层中存在台面和厚度变化和曲率，振荡可以被限制在波导层中的高增益区域。 连接或并置的条状接触几何形状也可用于在光波导层中提供多腔效应以增强纵向模式选择性。
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