摘要:
An avalanche-type detector circuit includes an avalanche-type photon detector device, a coupling capacitor, a bias network, a first transmission line and a second transmission line. The coupling capacitor has a first terminal that is coupled to a first terminal of the avalanche-type photon detector device. A first terminal of the bias network is coupled to the first terminal of the avalanche-type photon detector device, while a second terminal of the bias network is coupled to a bias voltage so that the avalanche-type photon detector device is reverse biased. A first end of the first transmission line is coupled to a second terminal of the coupling capacitor, and second end of the first transmission line is terminated by an open-circuit termination. A first end of the second transmission line is coupled to a second terminal of the avalanche-type photon detector device. The second end of the second transmission line is terminated by a short-circuit termination. A bias pulse voltage Vpulse is coupled to the second terminal of the coupling capacitor such that the bias pulse voltage reverse biases the avalanche-type photon detector device to be greater than a reverse breakdown voltage Vbr of the avalanche-type photon detector device during a duration of the bias pulse voltage Vpulse. A round-trip propagation delay along the first transmission line is substantially equal to a round-trip propagation delay along the second transmission line.
摘要:
A laser produces a light beam which is passed through a nonlinear crystal along a beam path. The noncritical phase matching axis of the nonlinear crystal is offset at a slight angle from the beam path. The angle of exit of the second harmonic light from the nonlinear crystal varies with the temperature of the crystal. A segmented photodetector detects this beam angle and generates a temperature error signal. A temperature control element receives a temperature error signal and causes the temperature of the crystal to be adjusted.
摘要:
An intense broadband continuum light pulse of uniform spectral intensity and short time duration is generated. This continuum pulse is then downconverted in frequency to a region of interest, preferably in the infrared region, by applying it as a pump pulse to a molecular or atomic vapor so as to induce stimulated Raman scattering. The resulting Raman Stokes pulse surprisingly tends to have the same spectral bandwidth, intensity uniformity and time duration as the pump continuum pulse.The downconverted continuum pulse (the Raman Stokes pulse) is then used to probe a sample. The sample converts the uniform spectral intensity distribution of the probe pulse into a nonuniform spectral intensity distribution which contains the absorption spectrum of the sample. This spectrum pulse has the same spectral bandwidth and time duration as the Raman Stokes pulse and is finally upconverted in frequency to a region where the spectrum pulse can be conveniently recorded. This is done with a four-wave Raman mixing process in an alkali metal vapor. The vapor is simultaneously pumped with the spectrum pulse and with a second pumping light pulse (or beam) having a frequency in the vicinity of a suitable resonance line of the vapor so as to induce SERS. In the alkali metal vapor, the resulting Raman Stokes pulse and spectrum pulse beat together with the second pumping light pulse to produce an upconverted pulse at a higher frequency band, which surprisingly also tends to have the same spectral bandwidth, intensity distribution (spectrum) and time duration as the spectrum pulse. The upconverted pulse is then recorded either photographically or photoelectrically with conventional spectrographic apparatus.
摘要:
A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.
摘要翻译:夹在两个导电电极之间的晶体半导体肖特基势垒状二极管与存储元件,字线和位线串联,其中,该设置提供大于1V的电压裕度和大于5×106A / cm 2的电流密度。 这种肖特基势垒状二极管可以在与低温BEOL半导体处理兼容的条件下制造,可以在低电压下提供高电流,具有高开关比,并且可以实现大型存储器阵列。
摘要:
The present invention relates to an improved process for making fullerenes having greater than seventy carbon atoms. The process involves electrical heating of a low density carbon rod in an inert atmosphere.
摘要:
A device is disclosed having a M8XY6 layer sandwiched in between a first conductive layer on the top and a second conductive layer on the bottom, wherein (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element. Also disclosed is a device comprising: an MaXbYc material contacted on opposite sides by respective layers of conductive material, wherein: (i) M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn, (ii) X includes at least one Group XIV element, and (iii) Y includes at least one Group XVI element, and wherein a is in the range of 48-60 atomic percent, b is in the range of 4-10 atomic percent, c is in the range of 30-45 atomic percent, and a+b+c is at least 90 atomic percent.
摘要翻译:公开了一种器件,其具有夹在顶部的第一导电层和底部的第二导电层之间的M8XY6层,其中(i)M包括选自由Cu,Ag,Li和 Zn,(ii)X包括至少一种XIV族,和(iii)Y包括至少一个XVI族。 还公开了一种装置,包括:MaXbYc材料,在相对侧通过相应的导电材料层接触,其中:(i)M包括选自由Cu,Ag,Li和Zn组成的组中的至少一种元素,(ii) X包括至少一个第XIV族元素,和(iii)Y包括至少一个第ⅩⅥ族元素,并且其中a在48-60原子百分比的范围内,b在4-10原子百分比的范围内,c是 在30-45原子%的范围内,a + b + c为至少90原子%。
摘要:
A film comprising fullerene molecules or their derivatives, preferably C.sub.60 or C.sub.70 fullerene molecules, is used as a lubricating film between two bearing surfaces. In a particular embodiment, a data recording disk file with the film deposited on the disk surface has improved properties of static friction and wear resistance at the head-disk interface.
摘要:
The present invention relates to hollow carbon fibers having a cylindrical wall comprising a single layer of carbon atoms and a process for the production of these fibers.
摘要:
A right angle corner reflector is used to reflect different parts of a single incident collimated radiation beam such that a cylindrical region is equally irradiated transversely from four directions. The cylindrical region is positioned such that rays which strike the intersection of the corner reflector surfaces are tangent to the side of the cylindrical region. The cylindrical region is spaced from the corner reflector such that one quarter of the radiation incident upon the cylindrical region strikes the region directly, one quarter is first reflected from one of the corner reflector surfaces, one quarter is first reflected from the other corner reflector surface, and one quarter is reflected from first one and then the other corner reflector surface before striking the cylindrical region.