METHOD FOR FABRICATING NON-VOLATILE MEMORY CELLS
    4.
    发明申请
    METHOD FOR FABRICATING NON-VOLATILE MEMORY CELLS 有权
    用于制造非易失性记忆细胞的方法

    公开(公告)号:US20080108192A1

    公开(公告)日:2008-05-08

    申请号:US12016904

    申请日:2008-01-18

    Applicant: Paul MOORE

    Inventor: Paul MOORE

    Abstract: A method for fabricating non-volatile memory cells is provided. The method includes providing a substrate, forming a first dopant region in the substrate, forming a second dopant region in the first dopant region, growing a first isolation region over a first portion of the substrate, the first dopant region, and the second dopant region, growing a second isolation region over a second portion of the substrate, the first dopant region, and the second dopant region, defining a contact region in the second dopant region, the contact region extending between the first isolation region and the second isolation region, depositing a gate oxide layer to form a first gate dielectric atop the first isolation region and a portion of the contact region, and overlaying a gate conductive layer on top of the gate oxide layer to form a first gate conductor atop the first gate dielectric.

    Abstract translation: 提供了制造非易失性存储单元的方法。 该方法包括提供衬底,在衬底中形成第一掺杂区,在第一掺杂区中形成第二掺杂区,在衬底的第一部分,第一掺杂区和第二掺杂区上生长第一隔离区 在衬底的第二部分上生长第二隔离区域,第一掺杂区域和第二掺杂剂区域,限定第二掺杂区域中的接触区域,在第一隔离区域和第二隔离区域之间延伸的接触区域, 沉积栅极氧化物层以在第一隔离区域和接触区域的一部分顶部形成第一栅极电介质,并且在栅极氧化物层的顶部上覆盖栅极导电层,以在第一栅极电介质顶部形成第一栅极导体。

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