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    Semiconductor devices, CMOS image sensors, and methods of manufacturing same
    1.
    发明授权
    Semiconductor devices, CMOS image sensors, and methods of manufacturing same 有权
    半导体器件，CMOS图像传感器及其制造方法

    公开(公告)号：US07595213B2

    公开(公告)日：2009-09-29

    申请号：US11517238

    申请日：2006-09-07

    申请人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    发明人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

    摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。

    Semiconductor devices, CMOS image sensors, and methods of manufacturing same
    2.
    发明申请
    Semiconductor devices, CMOS image sensors, and methods of manufacturing same 有权
    半导体器件，CMOS图像传感器及其制造方法

    公开(公告)号：US20070141801A1

    公开(公告)日：2007-06-21

    申请号：US11517238

    申请日：2006-09-07

    申请人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    发明人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    IPC分类号： H01L21/76

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

    摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。

    Back-illuminated image sensor and method of fabricating the same
    3.
    发明申请
    Back-illuminated image sensor and method of fabricating the same 有权
    背照式图像传感器及其制造方法

    公开(公告)号：US20080131588A1

    公开(公告)日：2008-06-05

    申请号：US11987607

    申请日：2007-12-03

    申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

    发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

    IPC分类号： B05D5/12

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

    摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

    摘要翻译： 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

    Back-lit image sensor and method of manufacture
    4.
    发明授权
    Back-lit image sensor and method of manufacture 有权
    背光图像传感器及其制造方法

    公开(公告)号：US08378440B2

    公开(公告)日：2013-02-19

    申请号：US12648381

    申请日：2009-12-29

    申请人： Doo-Won Kwon ,  Chang-Rok Moon

    发明人： Doo-Won Kwon ,  Chang-Rok Moon

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/1464

    摘要： A backside-illuminated image sensor includes photoelectric converters disposed in a front-side of a substrate and arranged to define pixels, back-side interlayer dielectric patterns disposed on the back-side of the substrate over the photoelectric converters, color filters arranged over the back-side interlayer dielectric patterns, and micro-lenses arranged over the color filters, wherein adjacent back-side interlayer dielectric patterns are separated by an intervening gap region having a refractive index less than that of the back-side interlayer dielectric patterns.

    摘要翻译： 背面照明图像传感器包括光电转换器，其设置在基板的正面并布置成限定像素，设置在光电转换器的基板的背面上的背面层间电介质图案，布置在背面的滤色器 并且布置在滤色器上的微透镜，其中相邻的背面层间电介质图案被折射率小于后侧层间电介质图案的折射率的中间间隙区域隔开。

    Back-illuminated image sensor and method of fabricating the same
    5.
    发明授权
    Back-illuminated image sensor and method of fabricating the same 有权
    背照式图像传感器及其制造方法

    公开(公告)号：US07750280B2

    公开(公告)日：2010-07-06

    申请号：US11987607

    申请日：2007-12-03

    申请人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

    发明人： Sung-Ho Hwang ,  Duck-Hyung Lee ,  Chang-Rok Moon ,  Doo-Won Kwon

    IPC分类号： B05D5/12

    CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

    摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

    摘要翻译： 背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。 因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

    Image sensor and method of fabricating the same
    6.
    发明授权
    Image sensor and method of fabricating the same 有权
    图像传感器及其制造方法

    公开(公告)号：US08614113B2

    公开(公告)日：2013-12-24

    申请号：US13239457

    申请日：2011-09-22

    申请人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

    发明人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

    摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

    摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

    Fabrication of image sensor with improved signal to noise ratio
    7.
    发明授权
    Fabrication of image sensor with improved signal to noise ratio 有权
    具有提高信噪比的图像传感器制造

    公开(公告)号：US07998782B2

    公开(公告)日：2011-08-16

    申请号：US12454818

    申请日：2009-05-22

    申请人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    发明人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641

    摘要： For fabricating an image sensor, an isolation structure is formed to define a first active region of a semiconductor substrate. A first transistor and a second transistor of a unit pixel are formed in the first active region. In addition, a threshold voltage lowering region is formed in a portion of the semiconductor substrate near a portion of the isolation structure abutting the second transistor in the first active region. The threshold voltage lowering region causes the second transistor to have a respective threshold voltage magnitude that is lower than for the first transistor. The threshold voltage lowering region is formed simultaneously with a passivation region in a second active region having a photodiode formed therein.

    摘要翻译： 为了制造图像传感器，形成隔离结构以限定半导体衬底的第一有源区。 在第一有源区中形成单位像素的第一晶体管和第二晶体管。 此外，在靠近第一有源区域中的第二晶体管的隔离结构的一部分附近，在半导体衬底的一部分中形成阈值电压降低区域。 阈值电压降低区域使得第二晶体管具有比第一晶体管低的相应阈值电压幅值。 阈值电压降低区域与其中形成有光电二极管的第二有源区域中的钝化区域同时形成。

    CMOS image sensors including backside illumination structure and method of manufacturing image sensor
    9.
    发明授权
    CMOS image sensors including backside illumination structure and method of manufacturing image sensor 有权
    CMOS图像传感器包括背面照明结构和图像传感器的制造方法

    公开(公告)号：US08378402B2

    公开(公告)日：2013-02-19

    申请号：US13438340

    申请日：2012-04-03

    申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

    发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

    摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。