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26 条记录 (耗时 0.032 秒)

    Fabrication of image sensor with improved signal to noise ratio
    1.
    发明授权
    Fabrication of image sensor with improved signal to noise ratio 有权
    具有提高信噪比的图像传感器制造

    公开(公告)号：US07998782B2

    公开(公告)日：2011-08-16

    申请号：US12454818

    申请日：2009-05-22

    申请人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    发明人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641

    摘要： For fabricating an image sensor, an isolation structure is formed to define a first active region of a semiconductor substrate. A first transistor and a second transistor of a unit pixel are formed in the first active region. In addition, a threshold voltage lowering region is formed in a portion of the semiconductor substrate near a portion of the isolation structure abutting the second transistor in the first active region. The threshold voltage lowering region causes the second transistor to have a respective threshold voltage magnitude that is lower than for the first transistor. The threshold voltage lowering region is formed simultaneously with a passivation region in a second active region having a photodiode formed therein.

    摘要翻译： 为了制造图像传感器，形成隔离结构以限定半导体衬底的第一有源区。 在第一有源区中形成单位像素的第一晶体管和第二晶体管。 此外，在靠近第一有源区域中的第二晶体管的隔离结构的一部分附近，在半导体衬底的一部分中形成阈值电压降低区域。 阈值电压降低区域使得第二晶体管具有比第一晶体管低的相应阈值电压幅值。 阈值电压降低区域与其中形成有光电二极管的第二有源区域中的钝化区域同时形成。

    Fabrication of image sensor with improved signal to noise ratio
    2.
    发明申请
    Fabrication of image sensor with improved signal to noise ratio 有权
    具有提高信噪比的图像传感器制造

    公开(公告)号：US20100227429A1

    公开(公告)日：2010-09-09

    申请号：US12454818

    申请日：2009-05-22

    申请人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    发明人： Jin-Ho Kim ,  Chang-Rok Moon ,  Seung-Hun Shin

    IPC分类号： H01L21/02

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641

    摘要： For fabricating an image sensor, an isolation structure is formed to define a first active region of a semiconductor substrate. A first transistor and a second transistor of a unit pixel are formed in the first active region. In addition, a threshold voltage lowering region is formed in a portion of the semiconductor substrate near a portion of the isolation structure abutting the second transistor in the first active region. The threshold voltage lowering region causes the second transistor to have a respective threshold voltage magnitude that is lower than for the first transistor. The threshold voltage lowering region is formed simultaneously with a passivation region in a second active region having a photodiode formed therein.

    摘要翻译： 为了制造图像传感器，形成隔离结构以限定半导体衬底的第一有源区。 在第一有源区中形成单位像素的第一晶体管和第二晶体管。 此外，在靠近第一有源区域中的第二晶体管的隔离结构的一部分附近，在半导体衬底的一部分中形成阈值电压降低区域。 阈值电压降低区域使得第二晶体管具有比第一晶体管低的相应阈值电压幅值。 阈值电压降低区域与其中形成有光电二极管的第二有源区域中的钝化区域同时形成。

    Image sensor and method of fabricating the same
    5.
    发明授权
    Image sensor and method of fabricating the same 有权
    图像传感器及其制造方法

    公开(公告)号：US08614113B2

    公开(公告)日：2013-12-24

    申请号：US13239457

    申请日：2011-09-22

    申请人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

    发明人： Yu-Jin Ahn ,  Duck-Hyung Lee ,  Jong-Cheol Shin ,  Chang-Rok Moon ,  Sang-Jun Choi ,  Eun-Kyung Park

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

    摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

    摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

    CMOS image sensors including backside illumination structure and method of manufacturing image sensor
    7.
    发明授权
    CMOS image sensors including backside illumination structure and method of manufacturing image sensor 有权
    CMOS图像传感器包括背面照明结构和图像传感器的制造方法

    公开(公告)号：US08378402B2

    公开(公告)日：2013-02-19

    申请号：US13438340

    申请日：2012-04-03

    申请人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

    发明人： Chang-Rok Moon ,  Duck-hyung Lee ,  Seong-ho Cho

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

    摘要翻译： 具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。 布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。 支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

    Image sensor circuits including shared floating diffusion regions
    8.
    发明授权
    Image sensor circuits including shared floating diffusion regions 有权
    图像传感器电路包括共享浮动扩散区域

    公开(公告)号：US07910965B2

    公开(公告)日：2011-03-22

    申请号：US12139022

    申请日：2008-06-13

    申请人： Seok-Ha Lee ,  Chang-Rok Moon ,  Kang-Bok Lee

    发明人： Seok-Ha Lee ,  Chang-Rok Moon ,  Kang-Bok Lee

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14643 ,  H01L27/14641 ,  H04N5/3575 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/378

    摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

    摘要翻译： 图像传感器可以包括以矩阵形式布置的多个光电转换元件。 多个浮动扩散区域可由相应的相应光电转换元件对共享。 多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。 多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行 的不同相邻行的浮动扩散区域中的光电转换元件。

    Semiconductor devices, CMOS image sensors, and methods of manufacturing same
    9.
    发明授权
    Semiconductor devices, CMOS image sensors, and methods of manufacturing same 有权
    半导体器件，CMOS图像传感器及其制造方法

    公开(公告)号：US07595213B2

    公开(公告)日：2009-09-29

    申请号：US11517238

    申请日：2006-09-07

    申请人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    发明人： Doo-Won Kwon ,  Jong-Ryeol Yoo ,  Chang-Rok Moon

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

    摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。