公开(公告)号：US06420747B2

公开(公告)日：2002-07-16

申请号：US09247275

申请日：1999-02-10

申请人： Douglas Duane Coolbaugh ,  James Stuart Dunn ,  Peter John Geiss ,  Douglas Brian Hershberger ,  Stephen Arthur St. Onge

发明人： Douglas Duane Coolbaugh ,  James Stuart Dunn ,  Peter John Geiss ,  Douglas Brian Hershberger ,  Stephen Arthur St. Onge

IPC分类号： H01L27108

CPC分类号： H01L29/94 ,  H01L29/4238

摘要： Reliable metal oxide semiconductor (MOS) devices which exhibit little or no oxide breakdown at the Rx edge during device biasing are provided. The improved reliability is obtained by forming a contact to the polysilicon top conductor over a substantially thicker portion of the dielectric region. A method of fabricating the improved CMOS devices is also disclosed herein.

摘要翻译： 提供了在器件偏置期间在Rx边缘处表现出很少或没有氧化物击穿的可靠的金属氧化物半导体（MOS）器件。 通过在电介质区域的基本上较厚的部分上形成与多晶硅顶导体的接触来获得改进的可靠性。 本文还公开了制造改进的CMOS器件的方法。

公开(公告)号：US06440811B1

公开(公告)日：2002-08-27

申请号：US09745361

申请日：2000-12-21

申请人： Douglas Duane Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

发明人： Douglas Duane Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

IPC分类号： H01L218228

CPC分类号： H01L28/40 ,  H01L27/0635

摘要： A method for fabricating a poly-poly capacitor integrated with a BiCMOS process which includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor; and forming an upper SiGe plate electrode during growth of a SiGe base region of a heterojunction bipolar transistor.

摘要翻译： 一种用于制造与BiCMOS工艺集成的多晶硅电容器的方法，包括在沉积CMOS晶体管的栅电极期间形成多晶硅电容器的下板电极; 以及在异质结双极晶体管的SiGe基区的生长期间形成上SiGe板电极。

公开(公告)号：US06833299B2

公开(公告)日：2004-12-21

申请号：US10292204

申请日：2002-11-12

申请人： Douglas D. Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

发明人： Douglas D. Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

IPC分类号： H01L218244

CPC分类号： H01L28/40 ,  H01L29/94

摘要： A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.

摘要翻译： 一种用作BiCMOS器件中的组件的堆叠多晶硅/ MOS电容器，包括在其表面形成有具有第一导电类型的区域的半导体衬底; 形成在覆盖所述第一导电型区域的所述半导体衬底上的栅极氧化物; 形成在至少所述栅极氧化物层上的第一多晶硅层，所述第一多晶硅层掺杂有N或P型掺杂剂; 形成在所述第一多晶硅层上的电介质层; 以及形成在所述介电层上的第二多晶硅层，所述第二多晶硅层掺杂有与所述第一多晶硅层相同或不同的掺杂剂。

公开(公告)号：US06507063B2

公开(公告)日：2003-01-14

申请号：US09551168

申请日：2000-04-17

申请人： Douglas D. Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

发明人： Douglas D. Coolbaugh ,  James Stuart Dunn ,  Stephen Arthur St. Onge

IPC分类号： H01L27108

CPC分类号： H01L28/40 ,  H01L29/94

摘要： A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.

摘要翻译： 一种用作BiCMOS器件中的组件的堆叠多晶硅/ MOS电容器，包括在其表面形成有具有第一导电类型的区域的半导体衬底; 形成在覆盖所述第一导电型区域的所述半导体衬底上的栅极氧化物; 形成在至少所述栅极氧化物层上的第一多晶硅层，所述第一多晶硅层掺杂有N或P型掺杂剂; 形成在所述第一多晶硅层上的电介质层; 以及形成在所述介电层上的第二多晶硅层，所述第二多晶硅层掺杂有与所述第一多晶硅层相同或不同的掺杂剂。

公开(公告)号：US06617220B2

公开(公告)日：2003-09-09

申请号：US09810856

申请日：2001-03-16

申请人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

发明人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

IPC分类号： H01L21331

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.

摘要翻译： 一种外延基极双极晶体管，包括在单晶单基片上的外延单晶层; 在单晶层的一部分上的凸起的发射体; 在半导体衬底的表面上的凸起的非本征基底; 所述凸起发射极和所述凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及从凸起的发射极和凸出的外部基极的扩散，以在单晶层中提供发射极扩散和非本征的基极扩散，其中发射极扩散具有发射极扩散结深度。

公开(公告)号：US06812545B2

公开(公告)日：2004-11-02

申请号：US10425270

申请日：2003-04-29

申请人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

发明人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

IPC分类号： H01L27082

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.

摘要翻译： 一种外延基极双极晶体管，包括在单晶单个衬底上的外延单晶层; 半导体表面上的凸起的发射极; 在半导体衬底的表面上凸起的非本征基底; 凸起的发射极和凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及来自凸起的发射极和凸出的外部基极的扩散，以在所述单晶衬底中提供发射极扩散和非本征基极扩散，其中所述发射极扩散具有发射极扩散结深度，并且其中所述发射极延伸到所述衬底表面， 所述基底延伸到所述衬底表面，其中所述发射极与基底表面的高度差小于所述发射极结深度的20％以及其制造方法。

公开(公告)号：US07173274B2

公开(公告)日：2007-02-06

申请号：US10953378

申请日：2004-09-29

申请人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

发明人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0339

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

摘要： A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

摘要翻译： 提供了在发射极和集电极区域之间基本上不存在位错缺陷的SiGe双极晶体管及其形成方法。 SiGe双极晶体管包括第一导电类型的集电极区域; 形成在所述集电区域的一部分上的SiGe基区; 以及形成在所述基极区域的一部分上的所述第一导电类型的发射极区域，其中所述集电极区域和所述基极区域在其中连续地包括碳。 SiGe基区进一步掺硼。

公开(公告)号：US20080124881A1

公开(公告)日：2008-05-29

申请号：US11562735

申请日：2006-11-22

申请人： Jack Ooh Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

发明人： Jack Ooh Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

摘要： A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

摘要翻译： 提供了在发射极和集电极区域之间基本上不存在位错缺陷的SiGe双极晶体管及其形成方法。 SiGe双极晶体管包括第一导电类型的集电极区域; 形成在所述集电区域的一部分上的SiGe基区; 以及形成在所述基极区域的一部分上的所述第一导电类型的发射极区域，其中所述集电极区域和所述基极区域在其中连续地包括碳。 SiGe基区进一步掺硼。

公开(公告)号：US07713829B2

公开(公告)日：2010-05-11

申请号：US11562735

申请日：2006-11-22

申请人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

发明人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

IPC分类号： H01L21/8222 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

摘要： A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

摘要翻译： 提供了在发射极和集电极区域之间基本上不存在位错缺陷的SiGe双极晶体管及其形成方法。 SiGe双极晶体管包括第一导电类型的集电极区域; 形成在所述集电区域的一部分上的SiGe基区; 以及形成在所述基极区域的一部分上的所述第一导电类型的发射极区域，其中所述集电极区域和所述基极区域在其中连续地包括碳。 SiGe基区进一步掺硼。

公开(公告)号：US06426265B1

公开(公告)日：2002-07-30

申请号：US09774126

申请日：2001-01-30

申请人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

发明人： Jack Oon Chu ,  Douglas Duane Coolbaugh ,  James Stuart Dunn ,  David R. Greenberg ,  David L. Harame ,  Basanth Jagannathan ,  Robb Allen Johnson ,  Louis D. Lanzerotti ,  Kathryn Turner Schonenberg ,  Ryan Wayne Wuthrich

IPC分类号： H01L21331

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

摘要： A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.