公开(公告)号：US09455147B2

公开(公告)日：2016-09-27

申请号：US13726826

申请日：2012-12-26

Applicant: Entegris, Inc.

Inventor： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

IPC: C23C14/48 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

公开(公告)号：US10229840B2

公开(公告)日：2019-03-12

申请号：US15522499

申请日：2015-10-29

Applicant: ENTEGRIS, INC.

Inventor： W. Karl Olander ,  Ying Tang ,  Barry Lewis Chambers ,  Steven E. Bishop

IPC: H01L21/00 ,  H01L21/67 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H01L21/66

Abstract: An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate. Preferably, in a gas hazard event, the shell exhaust discharge from the housing is also terminated, to facilitate exhausting all gas within the housing, outside as well as inside the gas box, to the treatment unit.

公开(公告)号：US20160305682A1

公开(公告)日：2016-10-20

申请号：US15202521

申请日：2016-07-05

Applicant: Entegris, Inc.

Inventor： W. Karl Olander ,  Paul J. Marganski

IPC: F24F11/04 ,  B01D53/04 ,  F17C13/08 ,  F24F11/00 ,  F17C11/00

CPC classification number: F24F11/74 ,  B01D53/04 ,  B01D2253/102 ,  B01D2258/0216 ,  F17C11/00 ,  F17C11/005 ,  F17C11/007 ,  F17C13/084 ,  F17C2201/0109 ,  F17C2201/032 ,  F17C2201/056 ,  F17C2205/0111 ,  F17C2205/0126 ,  F17C2205/0142 ,  F17C2205/0176 ,  F17C2205/018 ,  F17C2205/0338 ,  F17C2205/0394 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2250/0439 ,  F17C2250/0469 ,  F17C2250/0491 ,  F17C2250/0636 ,  F17C2260/044 ,  F17C2270/0518 ,  F24F11/30 ,  F24F2110/10 ,  F24F2110/40 ,  Y02P80/156

Abstract: A ventilation gas management system and process for an enclosure adapted to contain fluid supply vessel(s) and through which ventilation gas is flowed to provide safe operation in the event of leakage of fluid from a vessel. Ventilation gas flow is modulated to accommodate various hazard levels associated with the deployment and operation of such enclosure containing fluid supply vessel(s), e.g., a gas box or gas cabinet in a semiconductor manufacturing facility, thereby achieving reduction in ventilation gas requirements otherwise required for such deployment and operation.

Abstract translation: 一种通风气体管理系统和适用于容纳流体供应容器的外壳的过程，并且在流体从容器泄漏的情况下通过该通气气体流动以提供安全的操作。 调节通风气流以适应与包含流体供应容器（例如半导体制造设备中的气体箱或气体柜）的这种外壳的展开和操作相关的各种危险水平，从而实现另外需要的通气气体需求的减少 用于这种部署和操作。