公开(公告)号：US10109488B2

公开(公告)日：2018-10-23

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01J37/00 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01J37/244 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US20240136145A1

公开(公告)日：2024-04-25

申请号：US18536031

申请日：2023-12-11

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joe R. Despres ,  Joseph D. Sweeney ,  Oleg Byl ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/32532 ,  H01J37/3171 ,  H01J2237/31701

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US11881376B2

公开(公告)日：2024-01-23

申请号：US17492089

申请日：2021-10-01

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joe R. Despres ,  Joseph D. Sweeney ,  Oleg Byl ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/32532 ,  H01J37/3171 ,  H01J2237/31701

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US10354877B2

公开(公告)日：2019-07-16

申请号：US15928645

申请日：2018-03-22

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01L31/18 ,  H01L33/00 ,  H01J37/317 ,  H01L21/265

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US20190103275A1

公开(公告)日：2019-04-04

申请号：US16149792

申请日：2018-10-02

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01L31/18 ,  H01J37/244 ,  H01J37/08 ,  H01J37/317

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US10229840B2

公开(公告)日：2019-03-12

申请号：US15522499

申请日：2015-10-29

Applicant: ENTEGRIS, INC.

Inventor： W. Karl Olander ,  Ying Tang ,  Barry Lewis Chambers ,  Steven E. Bishop

IPC: H01L21/00 ,  H01L21/67 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H01L21/66

Abstract: An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate. Preferably, in a gas hazard event, the shell exhaust discharge from the housing is also terminated, to facilitate exhausting all gas within the housing, outside as well as inside the gas box, to the treatment unit.

公开(公告)号：US20180211839A1

公开(公告)日：2018-07-26

申请号：US15928645

申请日：2018-03-22

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/265 ,  H01L33/00 ,  H01L31/18 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US20180180225A1

公开(公告)日：2018-06-28

申请号：US15900033

申请日：2018-02-20

Applicant: Entegris, Inc.

Inventor： Joseph R. Despres ,  Joseph D. Sweeney ,  Edward E. Jones ,  Matthew B. Donatucci ,  Chiranjeevi Pydi ,  Edward A. Sturm ,  Barry Lewis Chambers ,  Gregory Scott Baumgart

IPC: F17C13/12 ,  F17C13/04

CPC classification number: F17C13/12 ,  F17C13/04 ,  F17C2201/0104 ,  F17C2205/0326 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0344 ,  F17C2205/035 ,  F17C2205/0382 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2221/013 ,  F17C2221/015 ,  F17C2221/016 ,  F17C2227/045 ,  F17C2250/0626 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/7795

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.

公开(公告)号：US09960042B2

公开(公告)日：2018-05-01

申请号：US14378963

申请日：2013-02-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/425 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01L31/18 ,  H01L33/00

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US09897257B2

公开(公告)日：2018-02-20

申请号：US14430105

申请日：2013-09-20

Applicant: Entegris, Inc.

Inventor： Joseph R. Despres ,  Joseph D. Sweeney ,  Edward E. Jones ,  Matthew B. Donatucci ,  Chiranjeevi Pydi ,  Edward A. Sturm ,  Barry Lewis Chambers ,  Gregory Scott Baumgart

IPC: F16K31/12 ,  F17C13/12 ,  F17C13/04

CPC classification number: F17C13/12 ,  F17C13/04 ,  F17C2201/0104 ,  F17C2205/0326 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0344 ,  F17C2205/035 ,  F17C2205/0382 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2221/013 ,  F17C2221/015 ,  F17C2221/016 ,  F17C2227/045 ,  F17C2250/0626 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/7795

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.