摘要:
A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.
摘要:
A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.
摘要:
A DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target that comprises at least one sidewall; a plasma ignition arc; and a catch-ring coupled to and located around the shield. Another DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Yet another DC magnetron sputtering system is described herein that comprises an anodic shield comprising at least one protrusion; a cathodic target comprising at least one recess, cavity or a combination thereof; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the at least one protrusion coupled to the anodic shield and the at least one protrusion, recess or cavity. Methods are also provided whereby the gas turbulence effect is mitigated, such methods including providing an anodic shield; providing a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Additional methods include providing an anodic shield; providing a cathodic target that comprises at least one sidewall; providing a catch-ring coupled to and around the shield; and initiating a plasma ignition arc.
摘要:
The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.
摘要:
The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.
摘要:
An alloy for use in vapor deposition or atomic layer deposition is described herein that includes ruthenium and at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof. In addition, a layered material is described herein that comprises at least one layer that includes a ruthenium-based material or ruthenium-based alloy and at least one layer that includes at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof.
摘要:
The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the shield. A second insulator is disposed between the shield and a coil and contacts a protrusion extending from the coil. A fastener is disposed through the first insulator and extends through the second insulator and into the protrusion. The fastener is electrically isolated from the shield by the first insulator. The invention includes coil assemblies containing the described coil support configuration. The invention further includes a method of supporting a coil within a processing chamber having a shield disposed therein. Insulators are inserted to extend from an outer side of the shield through a thickness of the shield. A coil is mounted within the chamber by inserting fasteners through each insulator into bosses which-protrude outwardly from the coil body.