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    Photostructuring process
    2.
    发明授权
    Photostructuring process 失效
    照片制作过程

    公开(公告)号：US5250375A

    公开(公告)日：1993-10-05

    申请号：US812585

    申请日：1991-12-20

    申请人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    发明人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    IPC分类号： G03F7/26 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C5/58

    CPC分类号： G03F7/40 ,  G03F7/039 ,  G03F7/405

    摘要： A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

    摘要翻译： 在亚微米范围内制造结构的方法的特征在于以下步骤：包含能与伯胺或仲胺反应的官能团的聚合物组分和N-封端的酰亚胺基的光致抗蚀剂层， 酸，并将合适的溶剂沉积在基材上; 干燥光致抗蚀剂层; 光致抗蚀剂层以成像方式曝光; 曝光的光刻胶层进行温度处理; 以这种方式处理的光致抗蚀剂层用含水碱性或有机显影剂显影成光致抗蚀剂结构; 并且用含有伯胺或仲胺的化学试剂处理光刻胶结构; 在20至100nm的范围内，在显影期间调节限定的暗场损耗。

    Photostructuring method
    5.
    发明授权
    Photostructuring method 失效
    光结构方法

    公开(公告)号：US5234794A

    公开(公告)日：1993-08-10

    申请号：US847881

    申请日：1992-03-10

    申请人： Michael Sebald ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Michael Sebald ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/40

    CPC分类号： G03F7/405 ,  G03F7/40

    摘要： A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.

    摘要翻译： 提供了一种用于将光致抗蚀剂结构中的沟槽宽度减小到分辨率极限以下的简单方法。 制备光致抗蚀剂结构并用试剂处理，然后含有与光致抗蚀剂结构的官能团反应的凸起成分。 凸起成分导致光致抗蚀剂结构的体积增加。 通过改变各种参数可以控制光致抗蚀剂结构体积增加的程度。

    Production of photolithographic structures
    8.
    发明授权
    Production of photolithographic structures 失效
    光刻结构的生产

    公开(公告)号：US5384220A

    公开(公告)日：1995-01-24

    申请号：US811706

    申请日：1991-12-20

    申请人： Recai Sezi ,  Horst Borndoerfer ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Recai Sezi ,  Horst Borndoerfer ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/004 ,  G03F7/027 ,  G03F7/029 ,  G03F7/039 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/027

    CPC分类号： G03F7/265 ,  Y10S430/147 ,  Y10S430/167

    摘要： A method for the photolithographic production of structures in the submicron range including the following steps:- a photoresist layer comprising a polymer containing carboxylic acid anhydride and carboxylic acid tert. butyl ester groups, a photoinitiator which releases an acid when exposed, and a suitable solvent is applied to a substrate;- the photoresist layer is dried;- the photoresist layer is exposed in an imagewise manner;- the exposed photoresist layer is subjected to temperature treatment;- the photoresist layer treated in this way is subjected to liquid silylation;- the silylated photoresist layer is dry-developed in an anisotropic oxygen plasma;where the temperature treatment is handled in such a way that the photoresist becomes hydrophilic in the exposed areas.

    摘要翻译： 一种用于在亚微米范围内光刻生产结构的方法，包括以下步骤： - 包含含有羧酸酐和羧酸叔丁酯的聚合物的光致抗蚀剂层。 丁基酯基，暴露时释放酸的光引发剂和合适的溶剂施加到基材上; - 将光致抗蚀剂层干燥; - 以成像方式曝光光致抗蚀剂层; 曝光的光致抗蚀剂层进行温度处理; - 以这种方式处理的光致抗蚀剂层进行液体甲硅烷基化; - 甲硅烷基化的光致抗蚀剂层在各向异性的氧等离子体中干式显影; 其中以这样的方式处理温度处理，使得光致抗蚀剂在曝光区域中变得亲水。

    Etch-resistant deep ultraviolet resist process having an aromatic treating step after development
    9.
    发明授权
    Etch-resistant deep ultraviolet resist process having an aromatic treating step after development 失效
    耐蚀深层超紫外线抗蚀剂工艺在发展后具有芳香处理步骤

    公开(公告)号：US5173393A

    公开(公告)日：1992-12-22

    申请号：US513570

    申请日：1990-04-24

    申请人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Recai Sezi ,  Michael Sebald ,  Rainer Leuschner ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/038 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/40

    摘要： A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.

    摘要翻译： 提供易于结构化并且特别适用于深紫外范围的光致抗蚀剂体系。 通过用反应物处理在光刻产生的光致抗蚀剂结构中产生对含卤素等离子体的耐腐蚀性提高。 反应物主要包含芳族结构，并且包括适于与光致抗蚀剂的其它可反应基团进行化学反应的反应性基团。 在一个实施方案中，光致抗蚀剂包括适于用深紫外光结构化的酸酐或环氧基团。