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公开(公告)号：US20080296534A1
公开(公告)日：2008-12-04
申请号：US11662272
申请日：2005-09-08
CPC分类号： H01L29/22 , B82Y10/00 , B82Y30/00 , H01L21/0237 , H01L21/02417 , H01L21/02439 , H01L21/02485 , H01L21/0251 , H01L21/02521 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L29/221
摘要： The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure.
摘要翻译： 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 优选地，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构。
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公开(公告)号：US08784685B2
公开(公告)日：2014-07-22
申请号：US12780404
申请日：2010-05-14
申请人： Efrat Lifshitz , Ariel Kigel , Maya Brumer-Gilary , Aldona Sashchiuk , Lilac Amirav , Viktoria Kloper , Dima Cheskis , Ruth Osovsky
发明人： Efrat Lifshitz , Ariel Kigel , Maya Brumer-Gilary , Aldona Sashchiuk , Lilac Amirav , Viktoria Kloper , Dima Cheskis , Ruth Osovsky
CPC分类号： H01L29/221 , C09K11/025 , C09K11/565 , C09K11/661 , C09K11/88 , C09K11/883 , H01L21/02521 , H01L21/02562 , H01L21/02568 , H01L21/02601 , H01L29/245 , H01L29/26 , H01L31/035281 , Y02E10/50
摘要： The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.
摘要翻译： 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 在某些实施例中，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构; 或芯体半导体材料为CdTe，合金壳半导体材料具有CdTexSe1-x或CdTexS1-x结构。
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公开(公告)号：US20110006285A1
公开(公告)日：2011-01-13
申请号：US12780404
申请日：2010-05-14
申请人： Efrat LIFSHITZ , Ariel Kigel , Maya Brumer-Gilary , Aldona Sashchiuk , Lilac Amirav , Viktoria Kloper , Dima Cheskis , Ruth Osovsky
发明人： Efrat LIFSHITZ , Ariel Kigel , Maya Brumer-Gilary , Aldona Sashchiuk , Lilac Amirav , Viktoria Kloper , Dima Cheskis , Ruth Osovsky
CPC分类号： H01L29/221 , C09K11/025 , C09K11/565 , C09K11/661 , C09K11/88 , C09K11/883 , H01L21/02521 , H01L21/02562 , H01L21/02568 , H01L21/02601 , H01L29/245 , H01L29/26 , H01L31/035281 , Y02E10/50
摘要： The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.
摘要翻译： 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 在某些实施例中，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构; 或芯体半导体材料为CdTe，合金壳半导体材料具有CdTexSe1-x或CdTexS1-x结构。
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公开(公告)号：US08030194B2
公开(公告)日：2011-10-04
申请号：US11663454
申请日：2005-09-22
申请人： Lilac Amirav , Efrat Lifshitz
发明人： Lilac Amirav , Efrat Lifshitz
IPC分类号： H01L21/00
CPC分类号： C01G15/00 , B22F1/0018 , B22F1/02 , B22F9/04 , B82Y30/00 , C01B19/007 , C01G9/08 , C01G11/02 , C01G13/00 , C01P2004/04 , C01P2004/51 , C01P2004/64 , C01P2006/40 , C23C4/123 , Y10S977/84
摘要： A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vaporizing the solvent of said spray droplets, consequently producing a stream of unsupported semiconductor nanoparticles; and (iv) collecting said unsupported semiconductor nanoparticles on a support.
摘要翻译： 提供了一种用于制造半导体纳米颗粒的方法，包括：（i）将半导体化合物或半导体化合物的混合物溶解在溶液中; （ii）产生所得的半导体化合物溶液的喷雾液滴; （iii）蒸发所述喷雾液滴的溶剂，从而产生未负载的半导体纳米颗粒物流; 和（iv）在载体上收集所述未负载的半导体纳米颗粒。
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公开(公告)号：US20090263956A1
公开(公告)日：2009-10-22
申请号：US11663454
申请日：2005-09-22
申请人： Lilac Amirav
发明人： Lilac Amirav
IPC分类号： H01L21/20
CPC分类号： C01G15/00 , B22F1/0018 , B22F1/02 , B22F9/04 , B82Y30/00 , C01B19/007 , C01G9/08 , C01G11/02 , C01G13/00 , C01P2004/04 , C01P2004/51 , C01P2004/64 , C01P2006/40 , C23C4/123 , Y10S977/84
摘要： A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vaporizing the solvent of said spray droplets, consequently producing a stream of unsupported semiconductor nanoparticles; and (iv) collecting said unsupported semiconductor nanoparticles on a support.
摘要翻译： 提供了一种用于制造半导体纳米颗粒的方法，包括：（i）将半导体化合物或半导体化合物的混合物溶解在溶液中; （ii）产生所得的半导体化合物溶液的喷雾液滴; （iii）蒸发所述喷雾液滴的溶剂，从而产生未负载的半导体纳米颗粒物流; 和（iv）在载体上收集所述未负载的半导体纳米颗粒。
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