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    Solid state image pickup device and its manufacture method
    5.
    发明申请
    Solid state image pickup device and its manufacture method 审中-公开
    固态摄像装置及其制造方法

    公开(公告)号：US20050145889A1

    公开(公告)日：2005-07-07

    申请号：US11002891

    申请日：2004-12-03

    申请人： Eiichi Okamoto

    发明人： Eiichi Okamoto

    IPC分类号： H01L27/148 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L27/14812 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02327

    摘要： A solid state image pickup device includes: a semiconductor substrate photoelectric conversion elements disposed in rows and columns; vertical charge transfer channels disposed in a vertical direction between adjacent columns of the photoelectric conversion elements; a read gate region formed for reading signal charges accumulated in a corresponding photoelectric conversion element to an adjacent one of the vertical charge transfer channels; a channel stop region formed adjacent to the vertical transfer channel; and a multi-layer transfer electrode formed extending in a horizontal direction above each of the vertical transfer channels, the multi-layer transfer electrode transferring signal charges read by a corresponding one of the vertical transfer channels and including an upper electrode and a lower electrode, wherein at least one of the upper and lower electrodes has a layout area broader than the other in an overlap portion between the upper and lower electrodes.

    摘要翻译： 固态图像拾取装置包括：以行和列布置的半导体衬底光电转换元件; 在光电转换元件的相邻列之间沿垂直方向设置的垂直电荷转移通道; 形成用于将相应的光电转换元件中累积的信号电荷读取到相邻的一个垂直电荷转移通道的读取栅极区域; 与垂直传送通道相邻形成的通道停止区域; 以及多层转移电极，其形成为在每个垂直传输沟道上方沿水平方向延伸，所述多层转移电极传输由对应的一个所述垂直传输沟道读取并包括上电极和下电极的信号电荷， 其中所述上电极和所述下电极中的至少一个在所述上电极和所述下电极之间的重叠部分具有比另一电极更宽的布局区域。

    ULTRA-VIOLET LIGHT SENSING DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    ULTRA-VIOLET LIGHT SENSING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    超紫外线感光装置及其制造方法

    公开(公告)号：US20130341690A1

    公开(公告)日：2013-12-26

    申请号：US13907437

    申请日：2013-05-31

    申请人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

    发明人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

    IPC分类号： H01L31/0248

    CPC分类号： H01L31/0248 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

    摘要： The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.

    摘要翻译： 本发明提供一种紫外线感测装置。 紫外线感测装置包括第一导电型基板，第二导电型区域和第一导电型高密度区域。 第一导电型基板包括光入射面。 第二导电类型区域设置在第一导电类型基板中并与光入射表面相邻。 第一导电型高密度区域设置在第二导电类型区域的下方。 本发明还提供另一种紫外线感测装置，其还包括夹在光入射表面和第二导电类型区域之间的第一导电类型的高密度浅区域。 本发明还公开了这些紫外线感测装置的制造方法。