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公开(公告)号：US20160035568A1
公开(公告)日：2016-02-04
申请号：US14812856
申请日：2015-07-29
Inventor： Yong-Duck CHUNG , DAEHYUNG CHO , Woo Jung LEE , Won Seok HAN
IPC: H01L21/02
CPC classification number: H01L21/02568 , C23C14/0021 , C23C14/0057 , C23C14/0063 , C23C14/0078 , C23C14/0623 , C23C14/14 , C23C14/243 , C23C14/5866 , H01L21/02557 , H01L21/0256 , H01L21/0259 , H01L21/02614 , H01L21/02631
Abstract: Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.
Abstract translation: 提供了一种制造过渡金属硫族化物薄膜的方法，包括提供其上具有过渡金属膜的基底，蒸发硫属原料源以形成具有第二分子结构的硫族元素材料，分解具有第二分子结构的硫族元素材料以形成 具有第一分子结构的硫属材料，其中第一分子结构包含比第二分子结构相对较少的原子，并且在过渡金属膜上提供具有第一分子结构的硫族元素材料。
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公开(公告)号：US20230361228A1
公开(公告)日：2023-11-09
申请号：US18081311
申请日：2022-12-14
Inventor： Yong-Duck CHUNG , Woo Jung LEE , DAEHYUNG CHO , Taeha HWANG
IPC: H01L31/0336 , H01L31/0216 , H01L31/0296 , H01L31/032 , H01L31/109 , H01L31/18
CPC classification number: H01L31/0336 , H01L31/02161 , H01L31/0296 , H01L31/0322 , H01L31/109 , H01L31/18
Abstract: Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.
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公开(公告)号：US20150204829A1
公开(公告)日：2015-07-23
申请号：US14447789
申请日：2014-07-31
Inventor： Daehyung CHO , Yong-Duck CHUNG
CPC classification number: G01N33/0036 , G01N21/783 , G01N27/12 , G01N27/125 , G01N33/0062 , G01N2033/0068
Abstract: Provided is a chalcogen gas monitoring device. The chalcogen gas monitoring device includes a reaction unit which varies in resistance due to reaction occurring by contact between chalcogen gas and a metal foil, a measurement unit measuring a resistance value according to the variation in resistance, a calculation unit measuring at least one of whether the chalcogen gas exists and a concentration of the chalcogen gas according to the resistance value, and a display unit outputting the measured results; wherein the metal foil is replaced according to results obtained by the reaction between the metal foil and the chalcogen gas.
Abstract translation: 提供硫属气体监测装置。 硫族元素气体监测装置包括：反应单元，其由于由硫族化合物气体和金属箔之间的接触而发生的反应而导致的电阻变化;测量单元，其根据电阻的变化测量电阻值;计算单元，测量是否为 存在硫族化合物气体和根据电阻值的硫属元素气体的浓度，以及输出测量结果的显示单元; 根据由金属箔和硫属元素气体之间的反应获得的结果来替换金属箔。
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公开(公告)号：US20140116504A1
公开(公告)日：2014-05-01
申请号：US13845766
申请日：2013-03-18
Inventor： Yong-Duck CHUNG , Daehyung CHO
IPC: H01L31/032
CPC classification number: H01L31/0322 , H01L31/022425 , H01L31/0749 , Y02E10/541
Abstract: Provided is a compound semiconductor solar cell including a back electrode disposed on a substrate, a hole-injection layer disposed on the back electrode, a light-absorbing layer disposed on the hole-injection layer, and a front transparent electrode disposed on the light-absorbing layer. The hole-injection layer may be formed of a metal oxide layer containing one or more metallic element.
Abstract translation: 本发明提供一种化合物半导体太阳能电池，其具备设置在基板上的背面电极，设置在背面电极上的空穴注入层，配置在空穴注入层上的光吸收层， 吸收层。 空穴注入层可以由含有一种或多种金属元素的金属氧化物层形成。
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Patent Agency Ranking
公开(公告)号：US20240128384A1
公开(公告)日：2024-04-18
申请号：US18483909
申请日：2023-10-10
Inventor： Woo Jung LEE , Yong-Duck CHUNG , DAEHYUNG CHO , Myeong Eon KIM , Taeha HWANG
IPC: H01L31/0224 , H01L31/0216 , H01L31/049
CPC classification number: H01L31/022441 , H01L31/02168 , H01L31/049
Abstract: Provided is a solar cell and a manufacturing method thereof. The cell includes a back-contact electrode on a substrate, a light absorbing layer on the back-contact electrode, an anti-defect layer on the light absorbing layer, a buffer layer on the anti-defect layer, and an upper electrode on a buffer layer. The anti-defect layer may contain an alkaline earth metal.
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公开(公告)号：US20170243999A1
公开(公告)日：2017-08-24
申请号：US15434718
申请日：2017-02-16
Inventor： Jae-hyung WI , Yong-Duck CHUNG , Woo Jung LEE , Daehyung CHO , Won Seok HAN
IPC: H01L31/0725 , H01L31/0224 , H01L31/18 , H01L31/0749
CPC classification number: H01L31/0725 , H01L31/022425 , H01L31/022466 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541
Abstract: A solar cell according to embodiments of the inventive concept includes a back electrode on a substrate, a first light absorbing layer including gallium (Ga) and indium (In) on the back electrode, a first buffer layer on the first light absorbing layer, a first window layer on the first buffer layer, a second light absorbing layer includingGa on the first window layer, a second buffer layer on the second light absorbing layer, and a second window layer on the second buffer layer, wherein a composition ratio of (Ga)/(Ga+In) of the first light absorbing layer is lower than that of the second light absorbing layer.
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7.发明申请SINGLE JUNCTION TYPE CIGS THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE THIN FILM SOLAR CELL 审中-公开单连接型薄膜薄膜太阳能电池及制造薄膜太阳能电池的方法公开(公告)号：US20140109963A1
公开(公告)日：2014-04-24
申请号：US14135621
申请日：2013-12-20
Inventor： Yong-Duck CHUNG , Won Seok HAN
IPC: H01L31/032
CPC classification number: H01L31/0322 , H01L31/02168 , H01L31/03923 , H01L31/068 , Y02E10/541 , Y02E10/547 , Y02P70/521
Abstract: Provided is a single junction type GIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type GIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type GIGS layer and an N type GIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.
Abstract translation: 提供了单结型GIGS薄膜太阳能电池，其包括使用单一结制造的CIGS光吸收层。 单结型GIGS薄膜太阳能电池包括衬底，沉积在衬底上的背面接触层，沉积在背面接触上的光吸收层，并且包括P型GIGS层和与P型CIGS层耦合的N型GIGS层 使用单结，以及沉积在光吸收层上的防反射膜。
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公开(公告)号：US20250071961A1
公开(公告)日：2025-02-27
申请号：US18796801
申请日：2024-08-07
Inventor： Yong-Duck CHUNG , Woo Jung Lee , Daehyung Cho , Tae-Ha Hwang
IPC: H05K9/00
Abstract: Provided is an electromagnetic wave absorption device. The electromagnetic wave absorption device includes a substrate and an electromagnetic wave absorption layer on the substrate. The electromagnetic wave absorption layer contains a chalcogenide material. The electromagnetic wave absorption layer contains Bi, Sb, Bi2Se3, Bi2Te3, Sb2Te3, Bi1-xSbx, Bi1.1Sb0.9Te2S, or (Bi,Sb)2(Se,Te,S)3. The electromagnetic wave absorption layer is on an entire surface of an upper surface of the substrate.
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公开(公告)号：US20140120651A1
公开(公告)日：2014-05-01
申请号：US13841772
申请日：2013-03-15
Inventor： Yong-Duck CHUNG , Dae-Hyung CHO , Won Seok HAN
IPC: H01L31/18
CPC classification number: H01L31/186 , C23C14/5853 , C23C14/5866 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02554 , H01L21/02557 , H01L21/02614 , H01L31/0749 , H01L31/1828 , H01L31/1864 , Y02E10/50 , Y02E10/541 , Y02E10/543 , Y02P70/521
Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.
Abstract translation: 太阳能电池的制造方法包括在光吸收层和窗电极层之间形成缓冲层。 形成缓冲层包括在光吸收层上沉积金属材料，在光吸收层上提供非金属材料，在光吸收层上提供包含氧原子的气体材料，并使金属材料与非金属材料反应 材料。 气体材料与金属材料和非金属材料反应，以在光吸收层上形成金属硫氧化物。
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