摘要:
A process in accordance with the invention enables the manufacturability of raised source-drain MOSFETs. In accordance with the invention, a raised source-drain material, having a window therein, is formed over the substrate. A gate oxide and window sidewall oxides are subsequently formed. Dopants are diffused into the substrate. A gate is formed within the window.
摘要:
A process in accordance with the invention minimizes the number of heat steps to which an source-drain extension region is exposed, thus minimizing source-drain extension region diffusion and allowing more precise control of source-drain extension region thickness over conventional processes. In accordance with the invention, spacers are formed abutting the gate and then heavily doped source and drain regions are formed. The gate and source and drain regions are silicided. The spacers are subsequently removed and source-drain extension regions are then formed. In one embodiment of the invention, a laser doping process is used to form the source-drain extension regions.
摘要:
A semiconductor device is provided with a gate electrode having a substantially rectangular profile by forming a dielectric film prior to depositing the gate electrode layer. The dielectric film is patterned and etched to form regions having a rectangular profile separated by open regions. A gate electrode layer is then deposited followed by planarization to form gate electrodes having a substantially rectangular profile.
摘要:
A CMOS semiconductor device having shallow source/drain junctions is formed by ion implanting antimony to form lightly doped source/drain regions of an N-channel transistor, thereby reducing channeling for a shallower projected junction depth as compared to conventional N-type impurity implantations. Upon growing a thermal oxide screen layer to protect the substrate from subsequent ion implantations, the implanted antimony experiences oxidation-retarded diffusion, further reducing the projected junction depth. After ion implanting N-type impurities to form moderately or heavily doped source/drain regions and activation annealing, the resulting semiconductor device exhibits the desirably shallow LDD junctions.
摘要:
A semiconductor device with shallow junctions is obtained by forming shallow source/drain extensions followed by forming a film over the gate electrode and the semiconductor substrate. The film is formed having a targeted thicknesses to facilitate gate electrode doping and source/drain formation. Ion implantation is then conducted to fully dope the gate electrode and form moderately or heavily doped source/drain implants, thereby reducing gate depletion.
摘要:
Halo implant regions are formed in a P-channel semiconductor device employing a zero degree tilt angle. N-type impurities are ion implanted to the desired depth in the semiconductor substrate prior to forming P-channel lightly doped source/drain areas. Subsequently, moderately or heavily doped source/drain regions are formed, followed by activation annealing. The halo implants diffuse to form halo structures at the desired location, thereby reducing short channel effects, such as subsurface punchthrough. Other embodiments enable independent control of the junction depths and channel lengths of N- and P-channel transistors, while maintaining high manufacturing throughput.
摘要:
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.
摘要:
A high-voltage transistor is formed in a deep well of a first conductivity type that has been formed in a semiconductor substrate or epitaxial layer of a second conductivity type. A body region of the second conductivity type is formed in the deep well, into which a source region of the first conductivity type is formed. A drain region of the first conductivity type is formed in the deep well and separated from the body region by a drift region in the deep well. A gate dielectric layer is formed over the body region, and a first polysilicon layer formed over the gate dielectric layer embodies the gate of the transistor. The field plate dielectric layer is formed over the drift region after the gate has been formed. Finally, the field plate dielectric is covered by a second polysilicon layer having a field plate positioned over the field plate dielectric layer in the drift region.
摘要:
An integrated circuit formed in semiconductor-on-insulator format. The integrated circuit includes a layer of semiconductor material disposed on an insulating layer, where the insulating layer disposed on a substrate. A first and a second MOSFET are provided such that one of a source and a drain of the first MOSFET is disposed adjacent one of a source and a drain of the second MOSFET. An amorphous region is formed in the layer of semiconductor material and extending from an upper surface of the layer of semiconductor material to the isolation layer. The amorphous region is formed between a crystalline portion of the one of the source and the drain of the first MOSFET and a crystalline portion of the one of the source and the drain of the second MOSFET.
摘要:
A silicon on insulator (SOI) wafer is formed with an unoxidized perforation in the insulating silicon dioxide buried oxide layer. A field effect transistor (FET) structure on the SOI wafer is located above the unoxidized perforation such that the unoxidized perforation provides for electrical coupling between the channel region of the FET with the bulk silicon substrate to eliminate the floating body effect caused by charge accumulation in the channel regions due to historical operation of the FET. The method of forming the FET includes masking a silicon wafer prior to an oxygen implantation process to form the unoxidized perforated buried oxide layer in the wafer.