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    UV light-emitting diode
    1.
    发明授权
    UV light-emitting diode 有权

    公开(公告)号：US10326049B1

    公开(公告)日：2019-06-18

    申请号：US16055584

    申请日：2018-08-06

    申请人： EPILEDS TECHNOLOGIES, INC.

    发明人： Kung-Hsieh Hsu ,  Ming-Sen Hsu

    IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/145 ,  H01L33/32

    摘要： An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.

    Sapphire Substrate with Patterned Structure
    2.
    发明申请
    Sapphire Substrate with Patterned Structure 有权
    蓝宝石衬底与图案结构

    公开(公告)号：US20170062655A1

    公开(公告)日：2017-03-02

    申请号：US14836679

    申请日：2015-08-26

    申请人： Epileds Technologies, Inc. ,  Lucemitek Co., Ltd.

    发明人： Kung-Hsieh Hsu ,  Cheng-Yu Chiu ,  Ming-Sen Hsu ,  Chun-Hung Chen ,  Chun-Yi Lee

    IPC分类号： H01L33/12

    CPC分类号： H01L21/0254 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/0243 ,  H01L33/007

    摘要： A sapphire substrate with patterned structure includes a sapphire base; a plurality of the cavities formed on a surface of the sapphire base; and a template layer. The plurality of the cavities are periodically arranged at a predetermined distance from each other, and each of the plurality of the cavities has a bottom surface and a top opening. Each of the plurality of the cavities comprises at least a first and a second inclined surfaces, and the first and the second inclined surfaces are inclined by a first and a second angles respectively with respect to the bottom surface of the plurality of the cavities.

    摘要翻译： 具有图案结构的蓝宝石衬底包括蓝宝石基底; 形成在蓝宝石基底的表面上的多个空腔; 和模板层。 多个空腔周期性地以彼此相隔预定的距离布置，并且多个空腔中的每一个具有底面和顶部开口。 多个空腔中的每一个至少包括第一和第二倾斜表面，并且第一和第二倾斜表面分别相对于多个空腔的底表面倾斜第一和第二角度。

    Method for growing group III nitride
    6.
    发明授权
    Method for growing group III nitride 有权

    公开(公告)号：US09666429B1

    公开(公告)日：2017-05-30

    申请号：US15171774

    申请日：2016-06-02

    申请人： EPILEDS TECHNOLOGIES, INC.

    发明人： Kung-Hsieh Hsu ,  Ming-Sen Hsu

    IPC分类号： H01L21/02 ,  H01L33/00

    CPC分类号： H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/20

    摘要： A method for growing Group III nitride is provided, which includes the following steps. A plurality of notches separated from each other are formed at the epitaxial substrate surface via the pattering process. The plurality of notches each has at least one stepping structure with a predetermined inclination angle, wherein the stepping structure in each notch gradually descends towards the center of the corresponding notch. The Group III nitride is grown on the epitaxial substrate via epitaxy process. Wherein, the Group III nitride growing at an upper portion of the epitaxial substrate restricts the vertical growth of the Group III nitride growing at the lower portion of the epitaxial substrate, and the Group III nitride growing at the lower portion of the epitaxial substrate promotes the lateral growth of the Group III nitride growing at the upper portion of the epitaxial substrate.