摘要:
A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
摘要:
The present invention discloses a device and a method for producing an oxidizable digital alloy that is sufficiently strain-compensated to provide for substantially defect-free growth on indium phosphide. The device comprises a layer of semiconductor material, a first layer, and a second layer. The first layer is indium arsenide and is coupled to the layer of semiconductor material, wherein the first layer of indium arsenide is under a compressive strain by a lattice mismatch between the layer of semiconductor material and the first layer of indium arsenide. The second layer is aluminum arsenide and is coupled to the layer of indium arsenide, wherein the second layer of aluminum arsenide is under a tensile strain by a lattice mismatch between the second layer and the first layer. The first layer and the second layer comprise a digital alloy of aluminum indium arsenide, and create a quasi-strain-compensated substantially defect-free alloy on the layer of semiconductor material therein. A superlattice period of the first layer of indium arsenide and a second layer of aluminum arsenide is selected to allow an oxide of desired depth to be produced from the digital alloy.
摘要:
A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
摘要:
A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.
摘要:
A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) comprising of including at least one heat spreading layer adjecent to one of the reflecting surfaces in a VCSEL. The heat spreading layer has high thermal conductivity allowing heat to bypass said one of the reflecting surfaces, thereby efficiently removing the heat away from the device. This also reduces the serial resistance and the thermal impedance of the VCSEL.
摘要:
A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.
摘要:
A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
摘要:
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased oxidation length, a light emitting active region between the top mirror and the bottom mirror, and an aperture with tapered edges between the active region and the top mirror, wherein the aperture has a thickness, a taper length, an oxide aperture length, a taper angle, and an aperture opening diameter designed to reduce an optical mode's diameter without significantly increasing the optical mode's round trip scattering loss.
摘要:
A low cost, high speed WDM optical link which employs a circular array of VCSEL emitters directly coupled to a multi-mode fiber through which multiple simultaneously optical transmissions are sent to an optical detector comprising a circular array of RCPD detectors receiving the multiple simultaneous transmissions. The emitters and detectors within each array are fabricated with a double-absorber design which avoids position sensitivity related to the cavity standing wave and eliminates the need for in-situ cavity-mode adjustment. In addition, a coupled-cavity structure is presented to achieve passbands with flat tops and steep sides to approach the ideal square-shape photoresponse and to ensure proper channel alignment.
摘要:
An improvement for allowing selective tuning of the emitted beam over a broad bandwidth to a diode laser having an active section for creating a light beam by spontaneous emission over a bandwidth around some center frequency and for guiding and reflecting the light beam between a pair of mirrors bounding the active on respective ends thereof to create an emitted beam of laser light. The mirrors each have narrow, spaced reflective maxima with the spacing of the reflective maxima of respective ones of the mirrors being different whereby only one the reflective maxima of each of the mirrors can be in correspondence and thereby provide a low loss window at any time. The preferred mirrors each include a plurality of discontinuities to cause the narrow, spaced reflective maxima wherein the spacing of the discontinuities of one mirror is different from the spacing of the discontinuities of the other mirror so as to cause the wavelength spacing of the maxima to be different. Additionally, the preferred embodiment includes a vernier circuit operably connected to the mirrors for providing an electrical signal to the mirrors which will cause continuous tuning within a desired frequency band, an offset control circuit operably connected to the mirrors for providing a voltage signal to the mirrors which will shift the reflective maxima of the mirrors into alignment at a desired frequency mode, and a phase control circuit for adjusting the laser mode wavelength to be in correspondence with the low loss window.