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109 条记录 (耗时 0.021 秒)

    Low aspect ratio magnetoresistive tunneling junction
    1.
    发明授权
    Low aspect ratio magnetoresistive tunneling junction 失效
    低纵横比磁阻隧道结

    公开(公告)号：US5959880A

    公开(公告)日：1999-09-28

    申请号：US993996

    申请日：1997-12-18

    申请人： Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

    发明人： Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

    IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C11/00

    CPC分类号： G11C11/5607 ,  G11C11/15 ,  G11C11/16 ,  G11C2211/5615

    摘要： A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.

    摘要翻译： 低纵横比磁阻隧穿结存储单元包括由电绝缘材料分开的两层磁阻材料，以形成磁阻隧道结。 交换相互作用层夹在一层结和第三层磁阻材料之间，以便将一层结的磁矢量与第三层中的磁矢量平行地平行，从而使连接点之间的静磁相互作用 层被取消，并且一层的磁矢量在平行于偏振轴的两个方向中的任一方向上自由移动。 反铁磁材料位于第三层附近，以将磁矢量固定在与偏振轴方向平行的第三层中。

    Stray magnetic shielding for a non-volatile MRAM
    2.
    发明授权
    Stray magnetic shielding for a non-volatile MRAM 失效
    杂散磁屏蔽用于非挥发性MRAM

    公开(公告)号：US5902690A

    公开(公告)日：1999-05-11

    申请号：US806275

    申请日：1997-02-25

    申请人： Clarence J. Tracy ,  Eugene Chen ,  Mark Durlam ,  Theodore Zhu ,  Saied N. Tehrani

    发明人： Clarence J. Tracy ,  Eugene Chen ,  Mark Durlam ,  Theodore Zhu ,  Saied N. Tehrani

    IPC分类号： G11C11/15 ,  H01L27/22 ,  B32B9/00

    CPC分类号： H01L27/228 ,  G11C11/15 ,  Y10S977/838 ,  Y10T428/1164

    摘要： A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.

    摘要翻译： 定位在半导体衬底上的非易失性磁阻存储器通过部分或完全围绕非易失性磁阻存储器的钝化层与杂散磁场屏蔽。 钝化层包括非导电铁氧体材料，例如Mn-Zn-铁素体，Ni-Zn-铁素体，MnFeO，CuFeO，FeO或NiFeO，用于屏蔽非易失性磁阻存储器与杂散磁场。 非导电铁氧体材料也可以是将内部产生的磁场聚焦在非易失性磁阻存储器上以降低功率需求的层的形式。

    MRAM with pinned ends
    3.
    发明授权
    MRAM with pinned ends 失效
    MRAM带固定端

    公开(公告)号：US5748524A

    公开(公告)日：1998-05-05

    申请号：US701355

    申请日：1996-09-23

    申请人： Eugene Chen ,  Saied N. Tehrani ,  Ronald N. Legge ,  Xiaodong T. Zhu

    发明人： Eugene Chen ,  Saied N. Tehrani ,  Ronald N. Legge ,  Xiaodong T. Zhu

    IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56

    CPC分类号： G11C11/5607 ,  G11C11/15 ,  G11C11/16 ,  G11C2211/5616

    摘要： A multi-layer magnetic memory cell is provided, with magnetic end vectors adjacent the ends of the cell pinned in a fixed direction. To pin the magnetic end vectors, a magnetic field is applied to an end of at least one of the layers of magnetic material in the cell to move the magnetic end vectors in the magnetic material at the end of the cell into a fixed direction. Pinning material is then disposed adjacent to the end to maintain the magnetic end vectors in the magnetic material at the end of the cell in the fixed direction.

    摘要翻译： 提供了一个多层磁存储单元，其磁端向量靠近固定在固定方向上的单元端。 为了固定磁端向量，在单元中至少一层磁性材料的一端施加磁场，使磁性材料端端的磁端矢量移动到固定方向。 然后将钉扎材料设置成与端部相邻，以将磁端向量保持在固定方向上的电池端部的磁性材料中。

    MRAM cell requiring low switching field
    7.
    发明授权
    MRAM cell requiring low switching field 失效
    需要低开关场的MRAM单元

    公开(公告)号：US5917749A

    公开(公告)日：1999-06-29

    申请号：US862898

    申请日：1997-05-23

    申请人： Eugene Chen ,  Saied N. Tehrani

    发明人： Eugene Chen ,  Saied N. Tehrani

    IPC分类号： G11C11/56 ,  G11C11/15

    CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C2211/5615 ,  G11C2211/5616

    摘要： A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.

    摘要翻译： 一种低开关场多状态多层磁存储单元，包括两层平行堆叠的磁性材料，叠置关系并由一层非磁性材料隔开，以形成多层磁存储单元的一部分 。 两层磁性材料形成为使得该宽度小于两层磁性材料中的磁畴壁的长度和小于宽度的宽度，沿着其长度设定形状各向异性易轴。 两层磁性材料中至少有一层具有大致平行于磁性材料层宽度的磁各向异性。

    Method of fabricating GMR devices
    8.
    发明授权
    Method of fabricating GMR devices 失效
    制造GMR器件的方法

    公开(公告)号：US5861328A

    公开(公告)日：1999-01-19

    申请号：US723438

    申请日：1996-10-07

    申请人： Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam ,  Xiaodong T. Zhu ,  Clarence J. Tracy

    发明人： Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam ,  Xiaodong T. Zhu ,  Clarence J. Tracy

    IPC分类号： H01L27/06 ,  H01L43/12 ,  H01L21/8238

    CPC分类号： H01L43/12 ,  H01L27/0688

    摘要： A method of fabricating GMR devices on a CMOS substrate structure with a semiconductor device formed therein. The method includes forming a dielectric system with a planar surface having a roughness in a range of 1 .ANG. to 20 .ANG. RMS on the substrate; disposing and patterning films of giant magneto-resistive material on the planar surface so as to form a memory cell; disposing a dielectric cap on the cell so as to seal the cell and provide a barrier to subsequent operations; forming vias through the dielectric cap and the dielectric system to interconnects of the semiconductor device; forming vias through the dielectric cap to the magnetic memory cell; and depositing a metal system through the vias to the interconnects and to the memory cell.

    摘要翻译： 一种在其上形成有半导体器件的CMOS衬底结构上制造GMR器件的方法。 该方法包括形成具有平坦表面的电介质系统，该平面表面在衬底上的粗糙度范围为1安培至20安培RMS; 在平坦表面上设置和构图巨磁阻材料的薄膜以形成记忆单元; 在电池上设置电介质盖，以密封电池并为后续操作提供屏障; 通过所述电介质盖和所述介电系统形成通孔以连接所述半导体器件; 通过介电盖形成通孔到磁存储单元; 以及通过所述通孔将金属系统沉积到所述互连件和所述存储器单元。

    Multi-layer magnetic memory cells with improved switching characteristics
    9.
    发明授权
    Multi-layer magnetic memory cells with improved switching characteristics 失效
    具有改进的开关特性的多层磁存储单元

    公开(公告)号：US5768183A

    公开(公告)日：1998-06-16

    申请号：US723159

    申请日：1996-09-25

    申请人： Xiaodong T. Zhu ,  Saied N. Tehrani ,  Mark Durlam ,  Eugene Chen

    发明人： Xiaodong T. Zhu ,  Saied N. Tehrani ,  Mark Durlam ,  Eugene Chen

    IPC分类号： G11C11/15 ,  G11C11/56

    CPC分类号： G11C11/5607 ,  G11C11/15 ,  G11C2211/5615

    摘要： A plurality of layers of magnetic material are stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell. The width of the cell is less than a width of magnetic domain walls within the magnetic layers so that magnetic vectors in the magnetic layers point along a length of the magnetic layers, and the ratio of the length to the width of the magnetic memory cell is in a range of 1.5 to 10. The magnetic layers are antiferromagnetically coupled when the ratio is less than 4 and ferromagnetically coupled when the ratio is greater than 4.

    摘要翻译： 多层磁性材料以平行的方式堆叠叠置，由非磁性材料层隔开，形成多层磁性存储单元。 电池的宽度小于磁性层内的磁畴壁的宽度，使得磁性层中的磁矢量沿着磁性层的长度指向，并且磁性存储单元的长度与宽度的比率是 在1.5至10的范围内。当该比率小于4时，磁性层反铁磁耦合，并且当该比率大于4时被磁化耦合。