公开(公告)号：US20080194097A1

公开(公告)日：2008-08-14

申请号：US12068410

申请日：2008-02-06

申请人： Eun-Sung Kim ,  Tae-Kyu Kim ,  Seok-Hwan Oh

发明人： Eun-Sung Kim ,  Tae-Kyu Kim ,  Seok-Hwan Oh

IPC分类号： H01L21/4757 ,  H01L21/4763

CPC分类号： H01L21/31133 ,  H01L21/32139

摘要： A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.

摘要翻译： 提供了对半导体衬底进行再加工的方法和使用其形成半导体器件的图案而不损坏有机抗反射涂层（ARC）的方法。 半导体衬底的再加工方法包括在其上形成有机ARC的衬底上形成光致抗蚀剂图案。 当在光致抗蚀剂图案中存在缺陷时，可以暴露出其上形成有光致抗蚀剂图案的基板的整个表面。 可以通过执行显影过程而不损坏有机ARC来去除全表面暴露的光致抗蚀剂图案。

公开(公告)号：US20100178599A1

公开(公告)日：2010-07-15

申请号：US12686464

申请日：2010-01-13

申请人： Bong-Cheol Kim ,  Dae-Youp Lee ,  Jae-Han Lee ,  Eun-Sung Kim ,  Byeong-Hwan Son

发明人： Bong-Cheol Kim ,  Dae-Youp Lee ,  Jae-Han Lee ,  Eun-Sung Kim ,  Byeong-Hwan Son

IPC分类号： G03F1/00

CPC分类号： G03F1/70

摘要： Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

摘要翻译： 提供了用于制造半导体器件的光掩模。 光掩模包括要转印到具有台阶差的半导体衬底上的第一和第二区域。 第一和第二区域具有掩模图案。 第一区域的掩模图案具有与第二区域的掩模图案不同的形状。 第二区域的掩模图案具有设置在其相对侧面部分中的凹凸部分。

公开(公告)号：US07697113B2

公开(公告)日：2010-04-13

申请号：US11589720

申请日：2006-10-31

申请人： Eun-Sung Kim

发明人： Eun-Sung Kim

IPC分类号： G03B27/52 ,  G01J1/20 ,  G03B27/42

CPC分类号： G03F9/7026 ,  G03F7/70091

摘要： In a method of determining a focus position for a substrate exposure process and a substrate exposure apparatus capable of performing the same, a reticle having a light-transmitting region may be illuminated by an off-axis illumination light. A projected light, which is transmitted through the reticle and a projection optical system, may be detected by a light sensor disposed on a substrate stage. An intensity of the projected light measured at a light-receiving surface of the light sensor may vary in accordance with positions of the light-receiving surface. The focus position may be determined based on the variations in the intensity of the projected light.

摘要翻译： 在确定用于基板曝光处理的焦点位置的方法和能够执行该曝光处理的基板曝光装置的方法中，具有透光区域的掩模版可以被离轴照明光照亮。 可以通过布置在基板台上的光传感器来检测通过掩模版和投影光学系统透射的投影光。 在光传感器的光接收表面处测量的投射光的强度可以根据受光面的位置而变化。 可以基于投影光的强度的变化来确定聚焦位置。

公开(公告)号：US20060148275A1

公开(公告)日：2006-07-06

申请号：US11325208

申请日：2006-01-03

申请人： Young-Koog Han ,  Dae-Joung Kim ,  Eun-Sung Kim ,  Jae-Hoon Kim

发明人： Young-Koog Han ,  Dae-Joung Kim ,  Eun-Sung Kim ,  Jae-Hoon Kim

IPC分类号： H01L21/00

CPC分类号： H01L23/544 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention provide, among other things, a method of forming an alignment mark having a stepped structure without an additional process. The alignment mark may be used to prevent formation of a defect source in a semiconductor device.

摘要翻译： 除其他之外，本发明的实施例提供了一种形成具有阶梯结构的对准标记的方法，而没有额外的工艺。 对准标记可以用于防止在半导体器件中形成缺陷源。

公开(公告)号：US10101660B2

公开(公告)日：2018-10-16

申请号：US15345910

申请日：2016-11-08

申请人： Jeong-Ju Park ,  Seung-Chul Kwon ,  Eun-Sung Kim ,  Kyeong-Mi Lee ,  Shi-Yong Yi ,  Tsuyosh Kurosawa ,  Katsumi Ohmori ,  Tasuku Matsumiya

发明人： Jeong-Ju Park ,  Seung-Chul Kwon ,  Eun-Sung Kim ,  Kyeong-Mi Lee ,  Shi-Yong Yi ,  Tsuyosh Kurosawa ,  Katsumi Ohmori ,  Tasuku Matsumiya

IPC分类号： G03F7/004 ,  G03F7/16 ,  H01L27/108 ,  C08F20/28 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/20 ,  G03F7/00 ,  G03F7/40 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L49/02

摘要： In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

公开(公告)号：US09627201B2

公开(公告)日：2017-04-18

申请号：US14687453

申请日：2015-04-15

申请人： Jae-Woo Nam ,  Eun-Sung Kim

发明人： Jae-Woo Nam ,  Eun-Sung Kim

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

摘要： In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.

公开(公告)号：US20070103663A1

公开(公告)日：2007-05-10

申请号：US11589720

申请日：2006-10-31

申请人： Eun-Sung Kim

发明人： Eun-Sung Kim

IPC分类号： G03B27/52

CPC分类号： G03F9/7026 ,  G03F7/70091

摘要： In a method of determining a focus position for a substrate exposure process and a substrate exposure apparatus capable of performing the same, a reticle having a light-transmitting region may be illuminated by an off-axis illumination light. A projected light, which is transmitted through the reticle and a projection optical system, may be detected by a light sensor disposed on a substrate stage. An intensity of the projected light measured at a light-receiving surface of the light sensor may vary in accordance with positions of the light-receiving surface. The focus position may be determined based on the variations in the intensity of the projected light.

摘要翻译： 在确定用于基板曝光处理的焦点位置的方法和能够执行该曝光处理的基板曝光装置的方法中，具有透光区域的掩模版可以被离轴照明光照亮。 可以通过布置在基板台上的光传感器来检测通过掩模版和投影光学系统透射的投影光。 在光传感器的光接收表面处测量的投射光的强度可以根据受光面的位置而变化。 可以基于投影光的强度的变化来确定聚焦位置。

公开(公告)号：US08241820B2

公开(公告)日：2012-08-14

申请号：US12686464

申请日：2010-01-13

申请人： Bong-Cheol Kim ,  Dae-Youp Lee ,  Jae-Han Lee ,  Eun-Sung Kim ,  Byeong-Hwan Son

发明人： Bong-Cheol Kim ,  Dae-Youp Lee ,  Jae-Han Lee ,  Eun-Sung Kim ,  Byeong-Hwan Son

IPC分类号： G03F1/38 ,  G03F1/44

CPC分类号： G03F1/70

摘要： Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

摘要翻译： 提供了用于制造半导体器件的光掩模。 光掩模包括要转印到具有台阶差的半导体衬底上的第一和第二区域。 第一和第二区域具有掩模图案。 第一区域的掩模图案具有与第二区域的掩模图案不同的形状。 第二区域的掩模图案具有设置在其相对侧面部分中的凹凸部分。

公开(公告)号：US07825041B2

公开(公告)日：2010-11-02

申请号：US12068410

申请日：2008-02-06

申请人： Eun-Sung Kim ,  Tae-Kyu Kim ,  Seok-Hwan Oh

发明人： Eun-Sung Kim ,  Tae-Kyu Kim ,  Seok-Hwan Oh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31133 ,  H01L21/32139

摘要： A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.

摘要翻译： 提供了对半导体衬底进行再加工的方法和使用其形成半导体器件的图案而不损坏有机抗反射涂层（ARC）的方法。 半导体衬底的再加工方法包括在其上形成有机ARC的衬底上形成光致抗蚀剂图案。 当在光致抗蚀剂图案中存在缺陷时，可以暴露出其上形成有光致抗蚀剂图案的基板的整个表面。 可以通过执行显影过程而不损坏有机ARC来去除全表面暴露的光致抗蚀剂图案。