公开(公告)号：US09704722B2

公开(公告)日：2017-07-11

申请号：US14958072

申请日：2015-12-03

申请人： Jeong-ju Park ,  Seung-chul Kwon ,  Eun-sung Kim ,  Jae-woo Nam ,  Shi-yong Yi ,  Hyun-woo Kim

发明人： Jeong-ju Park ,  Seung-chul Kwon ,  Eun-sung Kim ,  Jae-woo Nam ,  Shi-yong Yi ,  Hyun-woo Kim

IPC分类号： G03F7/40 ,  H01L21/311 ,  G03F7/00 ,  C08L53/00 ,  B82Y10/00 ,  G03F7/16 ,  G03F7/20 ,  B82Y40/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  H01L27/108

CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/10855

摘要： A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

公开(公告)号：US10101660B2

公开(公告)日：2018-10-16

申请号：US15345910

申请日：2016-11-08

申请人： Jeong-Ju Park ,  Seung-Chul Kwon ,  Eun-Sung Kim ,  Kyeong-Mi Lee ,  Shi-Yong Yi ,  Tsuyosh Kurosawa ,  Katsumi Ohmori ,  Tasuku Matsumiya

发明人： Jeong-Ju Park ,  Seung-Chul Kwon ,  Eun-Sung Kim ,  Kyeong-Mi Lee ,  Shi-Yong Yi ,  Tsuyosh Kurosawa ,  Katsumi Ohmori ,  Tasuku Matsumiya

IPC分类号： G03F7/004 ,  G03F7/16 ,  H01L27/108 ,  C08F20/28 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/20 ,  G03F7/00 ,  G03F7/40 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L49/02

摘要： In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

公开(公告)号：US20160172187A1

公开(公告)日：2016-06-16

申请号：US14958072

申请日：2015-12-03

申请人： Jeong-ju PARK ,  Seung-chul KWON ,  Eun-sung KIM ,  Jae-woo NAM ,  Shi-yong YI ,  Hyun-woo KIM

发明人： Jeong-ju PARK ,  Seung-chul KWON ,  Eun-sung KIM ,  Jae-woo NAM ,  Shi-yong YI ,  Hyun-woo KIM

IPC分类号： H01L21/027 ,  H01L21/311

CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/10855

摘要： A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

摘要翻译： 形成精细图案的方法包括：形成规则排列在特征层上的柱状引导件，在柱状引导件周围的特征层上形成嵌段共聚物层，相分离嵌段共聚物层，形成规则排列在第 具有柱状引导件的特征层，在围绕柱状引导件和第一域的特征层上形成第二结构域，通过蚀刻特征层来去除第一区域并形成与特征层中的第一区域相对应的孔 使用柱形引导件和第二域作为蚀刻掩模。 嵌段共聚物层包括聚合物共混物，其具有分别具有第一和第二重复单元的第一和第二聚合物嵌段，第一均聚物和第二均聚物。 第一结构域包括第一聚合物嵌段和第一均聚物，第二结构域包括第二聚合物嵌段和第二均聚物。

公开(公告)号：US20160163547A1

公开(公告)日：2016-06-09

申请号：US14957777

申请日：2015-12-03

申请人： Eun-sung Kim ,  Dae-yong Kang ,  Seung-chul Kwon ,  Shi-yong Yi

发明人： Eun-sung Kim ,  Dae-yong Kang ,  Seung-chul Kwon ,  Shi-yong Yi

IPC分类号： H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10855

摘要： The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

摘要翻译： 本发明构思提供了一种形成精细图案的方法，包括形成规则地布置在特征层上的多个柱状引导件。

公开(公告)号：US20170129972A1

公开(公告)日：2017-05-11

申请号：US15345910

申请日：2016-11-08

申请人： Jeong-Ju PARK ,  Seung-Chul KWON ,  Eun-Sung KIM ,  Kyeong-Mi LEE ,  Shi-Yong YI ,  Tsuyosh KUROSAWA ,  Katsumi OHMORI ,  Tasuku MATSUMIYA

发明人： Jeong-Ju PARK ,  Seung-Chul KWON ,  Eun-Sung KIM ,  Kyeong-Mi LEE ,  Shi-Yong YI ,  Tsuyosh KUROSAWA ,  Katsumi OHMORI ,  Tasuku MATSUMIYA

IPC分类号： C08F12/08 ,  H01L27/108 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/311 ,  C08F299/04 ,  C08F20/28

CPC分类号： G03F7/165 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C08F20/28 ,  C08L53/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10844 ,  H01L28/00

摘要： In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.