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公开(公告)号：US20170363494A1
公开(公告)日：2017-12-21
申请号：US15609667
申请日：2017-05-31
IPC分类号： G01L9/00 , H03K5/24 , H01L27/06 , H01L27/092 , H03K19/20 , H03K17/687
CPC分类号： G01L9/0098 , H03K5/2481 , H03K19/20
摘要： A semiconductor sensing device generates an output based on a sensor. A connection point of an output circuit constituted by first and second switching output elements connected so as to be complementary is connected to an output terminal. Between the first switching output element and the connection point of the output circuit, a first switching element is connected. Between the second switching output element and the connection point of the output circuit, a second switching element is connected. When voltage of the output terminal is a voltage lower than a lower limit clamp voltage, the first switching element turns OFF. When the voltage of the output terminal is a voltage higher than an upper limit clamp voltage, the second switching element turns OFF.
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2.发明申请SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR PHYSICAL QUANTITY SENSOR DEVICE 有权半导体集成电路和半导体物理量传感器器件公开(公告)号：US20130294171A1
公开(公告)日：2013-11-07
申请号：US13941001
申请日：2013-07-12
IPC分类号： G11C16/10
CPC分类号： G11C16/102 , G01R1/20 , G11C16/10 , G11C16/12 , G11C16/30 , G11C2216/30
摘要： In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant.
摘要翻译： 在本发明的方面中，辅助存储电路包括一个移位寄存器，其中多个触发器是级联的，以及多个反相电路，其反相和输出每个D触发器的输出。 主存储器电路包括根据来自辅助存储器电路的信号起作用的开关和与开关串联连接并由写入电压驱动的EPROM。 可变电阻电路包括根据来自辅助存储器电路的信号起作用的开关和与开关串联连接的电阻器。 在本发明的方面中，可以使写入电压和写入电压的端子共同化。 此外，可以提供一种低成本的半导体物理量传感器装置，其能够在写入EPROM中保持恒定时能够进行电压修整。
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公开(公告)号：US20200182725A1
公开(公告)日：2020-06-11
申请号：US16794231
申请日：2020-02-19
摘要： It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.
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4.发明申请SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING GROUNG WIRING PORTIONS CONNECTED TO AT LEAST TWO MEMORIES THAT STORE IDENTICAL DATA 有权具有连接到至少两个存储器标识数据的存储器的集成电路装置的半导体集成电路装置公开(公告)号：US20170018310A1
公开(公告)日：2017-01-19
申请号：US15174976
申请日：2016-06-06
IPC分类号： G11C16/10 , G11C16/30 , H01L27/115
CPC分类号： G11C16/10 , G06F12/0246 , G11C5/025 , G11C5/06 , G11C5/063 , G11C16/30 , G11C29/028 , H01L27/115 , H01L27/11521
摘要： On an IC chip, a first ground wiring line and a second ground wiring line that extends from a connection site with the first ground wiring line are disposed in a doubled manner. Among EPROMs storing identical data, the source of a first EPROM is connected to the second ground wiring line and the source of a second EPROM is connected to the first ground wiring line. The drains of the EPROMs are electrically connected to a write voltage line. An OR circuit outputs as 1-bit data of the memory circuit, the logical sum of the data stored by at least two of the EPROMs storing identical data. The EPROMs and the OR circuit are disposed near each other on the IC chip.
摘要翻译： 在IC芯片上，从与第一接地布线的连接位置延伸的第一接地布线和第二接地布线以双重布置。 在存储相同数据的EPROM中，第一EPROM的源极连接到第二接地布线，并且第二EPROM的源极连接到第一接地布线。 EPROM的漏极电连接到写入电压线。 OR电路作为存储器电路的1位数据输出由存储相同数据的至少两个EPROM存储的数据的逻辑和。 EPROM和OR电路在IC芯片上彼此靠近配置。
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公开(公告)号：US20240011856A1
公开(公告)日：2024-01-11
申请号：US18323392
申请日：2023-05-24
发明人： Yuichi ITO , Mutsuo NISHIKAWA
CPC分类号： G01L9/0054 , H10N30/04 , G01L2009/0066
摘要： Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.
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公开(公告)号：US20190187016A1
公开(公告)日：2019-06-20
申请号：US16174247
申请日：2018-10-29
IPC分类号： G01L9/00
CPC分类号： G01L9/0051
摘要： A pressure sensor for detecting pressure is provided. A pressure sensor including: a sensor portion that is provided in a diaphragm in a substrate; a circuit portion that is provided on the substrate and electrically connected to the sensor portion; a pad of conductivity that is provided above the substrate; and a first protective film that is provided on the pad, wherein the first protective film is also provided above the circuit portion, is provided. The first protective film may cover the circuit portion entirely. The first protective film may not cover at least part of the sensor portion. The first protective film may cover part of the sensor portion.
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公开(公告)号：US20170366004A1
公开(公告)日：2017-12-21
申请号：US15609535
申请日：2017-05-31
IPC分类号： H02H9/04 , H01L23/528 , H01L27/02 , H01L27/06 , H01L27/088 , H03K3/356
CPC分类号： H02H9/046 , H01L21/823418 , H01L23/528 , H01L27/0255 , H01L27/0266 , H01L27/0285 , H01L27/0629 , H01L27/088 , H01L27/0883 , H02H3/202 , H02H11/003 , H03K3/356 , H03K19/00315
摘要： A protection circuit includes a first PMOS and a first PDMOS receiving input of voltage of a voltage dividing point of voltage input from an external power supply terminal, and a second PMOS and a second PDMOS receiving input of drain output voltage of the first PDMOS. The first PMOS is connected on the external power supply terminal side of the first PDMOS, and the second PMOS is connected on the external power supply terminal side of the second PDMOS. During overvoltage application, the voltage of the voltage dividing point is clamped to the breakdown voltage of a Zener diode, the second PDMOS turns OFF, and supply to an integrated circuit protected from overvoltage is cut off. When the voltage source is connected in reverse, parasitic diodes of the first and second PMOSs are reverse-biased and the flow of current in a path through the parasitic diodes is inhibited.
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8.发明申请公开(公告)号：US20150001650A1
公开(公告)日：2015-01-01
申请号：US14313704
申请日：2014-06-24
CPC分类号： G01L9/0052 , F02D41/1448 , G01L9/0045 , G01L9/0055 , H01L2224/05 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： Aspects of a semiconductor pressure sensor device can include a semiconductor substrate having a depressed portion which forms a vacuum reference chamber, a diaphragm disposed on the front surface of the semiconductor substrate, and strain gauge resistors. The device can further include an aluminium wiring layer disposed on the semiconductor substrate, an antireflection film which is a TiN film disposed on the aluminium wiring layer, an adhesion securing and diffusion preventing layer which is a film stack of a Cr film and Pt film disposed on the TiN film, and an Au film stacked on the adhesion securing and diffusion preventing layer.
摘要翻译： 半导体压力传感器装置的方面可以包括具有形成真空参考室的凹陷部分的半导体衬底，设置在半导体衬底的前表面上的隔膜和应变计电阻器。 该装置还可以包括设置在半导体衬底上的铝布线层，设置在铝布线层上的TiN膜的防反射膜，设置有Cr膜和Pt膜的膜堆叠的粘附确保和扩散防止层 在TiN膜上的Au膜和层叠在粘合保护防扩散层上的Au膜。
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公开(公告)号：US20220080907A1
公开(公告)日：2022-03-17
申请号：US17456577
申请日：2021-11-25
发明人： Mutsuo NISHIKAWA , Hirofumi KATO
IPC分类号： B60R16/03 , B60R16/023 , G08B21/18
摘要： Provided is a semiconductor circuit connected to a load circuit and configured to control power supply to the load circuit, comprising: a power line to which a power voltage is applied; an overvoltage protection unit that has an output unit configured to interrupt power supply from the power line to the load circuit when the power voltage in the power line is overvoltage; and a state notification unit configured to notify the outside of a state signal indicating whether the output unit is interrupting the power supply.
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公开(公告)号：US20170045407A1
公开(公告)日：2017-02-16
申请号：US15198530
申请日：2016-06-30
CPC分类号： G01L9/06 , G01L9/0054
摘要： A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal. The semiconductor physical quantity sensor includes a sensor configured to generate a signal, an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal, a first resistor electrically connected between the power source terminal and the amplifier, a second resistor electrically connected between the output terminal and the ground terminal, and a filter electrically connected between the power source terminal and the sensor, and including a third resistor and a capacitor.
摘要翻译： 具有用于接收电源电位的电源端子的接收端子和输出端子的半导体物理量传感器装置。 半导体物理量传感器包括被配置为产生信号的传感器，被配置为放大信号的放大器，并且通过输出端子输出放大的信号，电连接在电源端子和放大器之间的第一电阻器，第二电阻器 电连接在输出端子和接地端子之间，以及滤波器，电连接在电源端子和传感器之间，并且包括第三电阻器和电容器。
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