公开(公告)号：US11222563B2

公开(公告)日：2022-01-11

申请号：US16929099

申请日：2020-07-14

Applicant: FUJIFILM CORPORATION

Inventor： Takahiro Sano ,  Masayuki Naya

IPC: G06T7/70 ,  B43L13/18 ,  G02B27/14 ,  G09G3/02 ,  G06T11/00

Abstract: The handwriting support device includes a beam splitter that reflects light from an image display surface such that a virtual image of an image displayed on the image display surface is visible on a writing surface facing the image display surface and transmits the light from a writing surface side such that the writing surface side is visible, a memory and a processor being configure to perform control for non-display of an image object, which overlaps with a real object on the writing surface and does not overlap with a tip of the writing instrument, among a plurality of image objects in a case where a first image including the plurality of image objects indicating writing target regions is displayed on the image display surface and the real object including the writing instrument is inserted into a space between the beam splitter and the writing surface.

公开(公告)号：US10928912B2

公开(公告)日：2021-02-23

申请号：US16568796

申请日：2019-09-12

Applicant: FUJIFILM Corporation

Inventor： Masayuki Naya ,  Takahiro Sano

IPC: G06F3/01 ,  G06F3/041

Abstract: A visual sense-and-tactile sense integrated presentation device includes a half mirror, a visual sense presentation body that presents visual information about an object and is disposed on a mirror surface side of the half mirror, and a tactile sense presentation body that presents tactile information and is disposed to face the visual sense presentation body across the mirror surface of the half mirror at an optical distance from the half mirror equal to an optical distance between the half mirror and the visual sense presentation body.

公开(公告)号：US20200004339A1

公开(公告)日：2020-01-02

申请号：US16568796

申请日：2019-09-12

Applicant: FUJIFILM Corporation

Inventor： Masayuki Naya ,  Takahiro Sano

IPC: G06F3/01 ,  G06F3/041

Abstract: A visual sense-and-tactile sense integrated presentation device includes a half mirror, a visual sense presentation body that presents visual information about an object and is disposed on a mirror surface side of the half mirror, and a tactile sense presentation body that presents tactile information and is disposed to face the visual sense presentation body across the mirror surface of the half mirror at an optical distance from the half mirror equal to an optical distance between the half mirror and the visual sense presentation body.

公开(公告)号：US10524058B2

公开(公告)日：2019-12-31

申请号：US16365119

申请日：2019-03-26

Applicant: FUJIFILM Corporation

Inventor： Yoshikazu Hishinuma ,  Takayuki Naono ,  Takahiro Sano

IPC: H04R17/02 ,  H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H04R19/04

Abstract: A piezoelectric microphone includes a plate, a support portion that is provided around the plate, connection portions that connect the plate and the support portion on two or more sides of the plate, and a detection portion including a lower electrode, a piezoelectric film, and an upper electrode which are stacked in this order. The detection portion is stacked on the connection portion . An inflection point of a cross-sectional deformation curve in a case in which the plate and the connection portion are deformed by sound pressure is present in a region in which the detection portion is not stacked.

公开(公告)号：US10852767B2

公开(公告)日：2020-12-01

申请号：US16788249

申请日：2020-02-11

Applicant: FUJIFILM CORPORATION

Inventor： Takahiro Sano ,  Masayuki Naya

IPC: G09B11/00 ,  G06F1/16 ,  G02B5/08 ,  G06F3/0354 ,  G06F3/041

Abstract: A handwriting support device includes a half mirror; an image display surface; a writing surface, a virtual image of an image displayed on the image display surface being projected on the writing surface. In a case where a real object is inserted onto the writing surface, the image display control unit causes a non-display processed image to be displayed on the image display surface, the non-display processed image being obtained by at least a partial region, of a region of the first image corresponding to a vertically projected region of the real object on the writing surface, being subjected to non-display processing. In the handwriting support device, an image, which is a virtual image of the non-display processed image in which at least a part of an inside of the vertically projected region of the real object is non-displayed, is projected onto the writing surface.

公开(公告)号：US10718735B2

公开(公告)日：2020-07-21

申请号：US16582055

申请日：2019-09-25

Applicant: FUJIFILM Corporation

Inventor： Fumihiko Mochizuki ,  Takahiro Sano ,  Koji Takaku ,  Yasuhiro Aiki

IPC: G01N5/02 ,  G01N27/416 ,  G01N33/00 ,  G01N33/483 ,  G01N27/407

Abstract: A gas detection method using a gas detection element obtained by laminating a fixed support, a first electrode (2), a dielectric sensor (3), a second electrode (4), and a gas adsorption film (5), in this order, the method including: a step of applying a first signal resonantly driving the dielectric sensor (3) between electrodes of the first electrode (1) and the second electrode (3), and detecting gas adsorbed on the gas adsorption film based on a change of a resonant frequency of the dielectric sensor; and a step of heating the dielectric sensor (3) by applying a second signal between the electrodes after the detection of gas and desorbing gas adsorbed in the gas adsorption film; a gas detection system capable of performing the method; and a gas desorption method appropriate for applying this gas detection method.

公开(公告)号：US10020443B2

公开(公告)日：2018-07-10

申请号：US15846272

申请日：2017-12-19

Applicant: FUJIFILM Corporation

Inventor： Takayuki Naono ,  Takahiro Sano

IPC: H01L41/187 ,  H01L41/312 ,  H01L41/09 ,  H01L41/316 ,  H01L41/08 ,  H01L41/047

CPC classification number: H01L41/312 ,  B06B1/0688 ,  H01L41/0471 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/1875 ,  H01L41/316

Abstract: A first lamination step of forming lower electrode films on both surfaces of a diaphragm and directly forming a first Pb-containing perovskite oxide film which has a larger thermal expansion coefficient than that of the diaphragm and has a columnar structure on a front surface of the lower electrode film; and a second lamination step of directly forming a second Pb-containing perovskite oxide film on a front surface of the lower electrode film are sequentially performed. The second Pb-containing perovskite oxide film is formed under a condition that a difference between a molar ratio RA1 of Pb to a B-site element in the first Pb-containing perovskite oxide film and a molar ratio RB1 of Pb to a B-site element in the second Pb-containing perovskite oxide film after the second lamination step is 0.056 or less.

公开(公告)号：US09688528B2

公开(公告)日：2017-06-27

申请号：US14970933

申请日：2015-12-16

Applicant: FUJIFILM Corporation

Inventor： Takahiro Sano ,  Takayuki Naono

IPC: H04R17/00 ,  B81B3/00 ,  G01C19/56 ,  G01P15/09 ,  H03H9/17 ,  H04R17/10 ,  H01L41/08 ,  H01L41/113 ,  H01L41/319 ,  H04R31/00 ,  B81C1/00 ,  H03H3/02 ,  H03H3/04 ,  G01P15/08

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0112 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176 ,  G01C19/56 ,  G01P15/09 ,  G01P2015/084 ,  H01L41/0815 ,  H01L41/1138 ,  H01L41/319 ,  H03H9/17 ,  H03H2003/027 ,  H03H2003/0414 ,  H04R17/10 ,  H04R31/00 ,  H04R2201/003

Abstract: A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R2 of the film thickness t2 of the second silicon oxide film with respect to the sum of the film thickness t1 of the first silicon oxide film and the film thickness t2 of the second silicon oxide film satisfies the following condition: 0.10 μm≦t1≦2.00 μm; and R2≧0.70.