PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE
    6.
    发明申请
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE 有权
    图案形成方法,抗紫外线敏感性或辐射敏感性树脂组合物,电阻膜,使用其的电子器件的制造方法和电子器件

    公开(公告)号:US20140349224A1

    公开(公告)日:2014-11-27

    申请号:US14451901

    申请日:2014-08-05

    Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a compound capable of decomposing by the action of an acid to generate an acid, and (D) a solvent; (2) a step of exposing the film by using an actinic ray or radiation, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

    Abstract translation: 提供了一种图案形成方法,其包括(1)通过使用含有(A)含有酸可分解重复单元的树脂并且能够降低溶解度的光化射线敏感性或辐射敏感性树脂组合物形成膜的步骤 对于含有机溶剂的显影剂,通过酸的作用,(B)能够在用光化射线或辐射照射时能够产生酸的化合物,(C)能够通过酸的作用分解以产生酸的化合物, 酸,和(D)溶剂; (2)通过使用光化射线或辐射使膜曝光的步骤,以及(4)通过使用含有机溶剂的显影剂显影曝光的膜以形成负图案的步骤。

    SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
    8.
    发明申请
    SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION 审中-公开
    半导体元件和绝缘层形成组合物

    公开(公告)号:US20170005266A1

    公开(公告)日:2017-01-05

    申请号:US15259164

    申请日:2016-09-08

    Abstract: Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring, m1b represents an integer of 1 to 5.

    Abstract translation: 在通式(IA)中,R 1a表示氢原子,卤素原子或烷基。 L1a和L2a各自独立地表示单键或连接基团。 X表示可交联基团。 m2a表示1〜5的整数,并且在m2a为2以上的情况下,m 1a的数X可以相同或不同,m1a表示1〜5的整数,在m1a为 2个以上时,m1a个(-L2a-(X)m2a)可以相同也可以不同。 在通式(IB)中,R 1b表示氢原子,卤素原子或烷基。 L1b表示单键或连接基,Ar1b表示芳香环,m1b表示1〜5的整数。

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