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公开(公告)号：US20230243780A1
公开(公告)日：2023-08-03
申请号：US18173048
申请日：2023-02-22
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Yukihisa Kawada , Naotsugu Muro , Masahiro Yoshidome , Tetsuya Kamimura , Ryo Saito
IPC: G01N29/036 , B08B3/08 , B08B13/00 , G03F7/20 , H01L21/02
CPC classification number: G01N29/036 , B08B3/08 , B08B13/00 , G03F7/70925 , H01L21/02041
Abstract: Provided are a method of manufacturing a semiconductor device in which the purity of a chemical liquid containing an organic solvent is more easily managed, a method of washing a semiconductor manufacturing apparatus, and a simpler method of measuring the cleanliness of a washing solution. A method of manufacturing a semiconductor device has Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain the amount of change in the resonance frequency of the oscillator resulting from the contact with the chemical liquid, Step 2 of confirming whether or not the amount of change in the resonance frequency of the chemical liquid falls within a permissible range of the amount of change in the resonance frequency based on the preset purity of the chemical liquid, and Step 3 of using the chemical liquid confirmed in Step 2 in manufacturing a semiconductor device.
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公开(公告)号：US20210132503A1
公开(公告)日：2021-05-06
申请号：US17144259
申请日：2021-01-08
Applicant: FUJIFILM Corporation
Inventor： Tadashi OOMATSU , Tetsuya KAMIMURA , Tetsuya SHIMIZU , Satomi TAKAHASHI , Akihiko OHTSU
Abstract: An object of the present invention is to provide a chemical liquid which exhibits excellent defect inhibition performance even after long-term preservation, a kit, a pattern forming method, a chemical liquid manufacturing method, and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, an acid component, and a metal component. The content of the acid component is equal to or greater than 1 mass ppt and equal to or smaller than 15 mass ppm with respect to the total mass of the chemical liquid. The content of the metal component is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid.
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公开(公告)号：US20200234687A1
公开(公告)日：2020-07-23
申请号：US16838497
申请日：2020-04-02
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Shinya HAKUTA , Shogo YAMAZOE , Yoshihiro SUGAWARA
IPC: G10K11/172 , G10K11/168 , F24F13/24 , F01N1/02
Abstract: A soundproof structure body includes a first tube structure and a second tube structure connected to the first tube structure and having a cross-sectional area different from the first tube structure, in which a structure body having a cross-sectional area smaller than a cross-sectional area of the first tube structure is installed in the first tube structure, and a transmission loss in a case where the structure body is installed in the first tube structure with respect to a case where the structure body is not installed in the first tube structure is positive at two frequencies adjacent to each other and difficult to generate an air column resonance mode in the first tube structure. This soundproof structure body generates a soundproof effect even at frequencies other than air column resonance of a tube structure such as a duct or a muffler, has a small size, and can obtain a high transmission loss in a wide-band.
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公开(公告)号：US20190341016A1
公开(公告)日：2019-11-07
申请号：US16514145
申请日：2019-07-17
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Akihiko OHTSU
IPC: G10K11/172 , E04B1/84
Abstract: A soundproof member includes one or more soundproof cells each including a frame having a hole portion and a film fixed to the frame. The film vibrates in response to sound, and the film includes one or more cut portions penetrating from one surface to the other surface. As a result, in the soundproof member, a specific frequency has an absorption peak of noise in order to suppress noise of the specific frequency, and a peak spreads,
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公开(公告)号：US20220389938A1
公开(公告)日：2022-12-08
申请号：US17886556
申请日：2022-08-12
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Yoshihiro SUGAWARA , Akihiko OHTSU
Abstract: An axial fan that includes a casing having an inner space that penetrates in one direction, and a rotor blade disposed in the inner space of the casing, and a silencer that is disposed at a position connected to the inner space of the axial fan are provided, in which the axial fan has a sound pressure distribution having a position at which a sound pressure is high and a position at which the sound pressure is low in a circumferential direction in the inner space during driving, and the silencer is disposed at the position of the axial fan in the circumferential direction at which the sound pressure is high and is not disposed at the position at which the sound pressure is low.
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Patent Agency Ranking
公开(公告)号：US20210233506A1
公开(公告)日：2021-07-29
申请号：US17232770
申请日：2021-04-16
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Shinya HAKUTA , Yoshihiro SUGAWARA , Shogo YAMAZOE
IPC: G10K11/172 , G10K11/16 , F24F13/24
Abstract: In a soundproof structure body including a tubular tube body having an opening portion, and a resonance type soundproof structure, in which a phase difference θ, at an upstream of the resonance type soundproof structure, between a reflected wave in the resonance type soundproof structure and a reflected wave of a transmitted wave transmitted through the resonance type soundproof structure and reflected by the opening portion satisfies Inequation |θ−π|≤π/3 with respect to a resonance frequency of the resonance type soundproof structure. This soundproof structure body can effectively offset a reflected wave from a resonance type soundproof structure body by opening end reflection by appropriately specifying positions of the resonance type soundproof structure and the opening end portion of a duct, a tube line, or the like to improve an absorbance of a single resonance type soundproof structure.
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公开(公告)号：US20190362699A1
公开(公告)日：2019-11-28
申请号：US16534429
申请日：2019-08-07
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Akihiko OHTSU
IPC: G10K11/172 , E04B1/84 , G10K11/162
Abstract: Provided are a soundproof structure and an opening structure which is easy to be manufactured, has a light weight, and is capable of absorbing sound in a wide frequency bandwidth. The soundproof structure includes a tubular member and a film member arranged so as to block a hollow portion of the tubular member. Assuming that a wavelength corresponding to a resonance frequency in a single film vibration element of the film member is λa, lengths from a position at which the film member is attached to two opened end surfaces of the tubular member are L1 and L2, an opened end correction length is δ, and n is an integer of 0 or more, at least one of (λa/4−λa/8)+n×λa/2−δ≤L1≤(λa/4+λa/8)+n×λa/2−δ or (λa/4−λa/8)+n×λa/2−δ≤L2≤(λa/4+λa/8)+n×λa/2−δ is satisfied.
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公开(公告)号：US20190179453A1
公开(公告)日：2019-06-13
申请号：US16274540
申请日：2019-02-13
Applicant: FUJIFILM Corporation
Inventor： Akiko HATTORI , Akihiko OHTSU
Abstract: An object of the invention is to provide a conductive film having excellent visibility. Another object of the invention is to provide a touch panel sensor and a touch panel. A conductive film according to the embodiment of the invention includes a substrate and a conductive portion which is disposed on the substrate and composed of thin metal wires having a line width of 0.5 μm or greater and less than 2 μm, the thin metal wires form a mesh pattern, a line width L μm of the thin metal wires and an opening ratio A % of the mesh pattern satisfy a relationship represented by Formula (I), and a reflectivity of the thin metal wires at a wavelength of 550 nm is 80% or less. Formula (I): 70≤A
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公开(公告)号：US20160379800A1
公开(公告)日：2016-12-29
申请号：US15258443
申请日：2016-09-07
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU
IPC: H01J37/32
CPC classification number: H01J37/32009 , B32B3/30 , B32B7/02 , G03F7/0002 , H01J37/32082 , H01J37/32541 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/31 , H01L21/67069
Abstract: When a mask pattern provided on a dielectric substrate is provided with a pattern area having a plurality of micro openings, and a non-pattern area other than the pattern area, in the case in which the dielectric substrate is mounted at a predetermined position in a substrate mounting structure portion, in the pattern area, the configuration of the substrate mounting structure portion is set such that an average dielectric constant between a surface of the dielectric substrate and a surface of a predetermined electrode of the substrate mounting structure portion is larger than an average dielectric constant in the non-pattern area, and the dielectric substrate is etched by mounting the dielectric substrate at the predetermined portion of the substrate mounting structure portion, and generating plasma under an atmosphere reduced in pressure compared with atmospheric pressure.
Abstract translation: 当设置在电介质基板上的掩模图案设置有具有多个微孔的图案区域和除图案区域之外的非图案区域时，在将电介质基板安装在图案区域中的预定位置的情况下 在图案区域中，基板安装结构部分的基板安装结构部分的结构被设定为使得介质基板的表面与基板安装结构部分的预定电极的表面之间的平均介电常数大于 在非图案区域中的平均介电常数，并且通过将电介质基板安装在基板安装结构部分的预定部分来蚀刻电介质基板，并且在与大气压力相比降低的气氛下产生等离子体。
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10.发明公开公开(公告)号：US20230395366A1
公开(公告)日：2023-12-07
申请号：US18451810
申请日：2023-08-17
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Masahiro YOSHIDOME , Yukihisa KAWADA , Ryo SAITO
CPC classification number: H01L21/02098 , H01L22/24 , H01L22/12 , G01N21/9501 , G01N2021/8838 , G01N21/8851 , G01N2021/8835 , G01N2021/8861 , G01N21/8806
Abstract: Provided are a defect removal device and a defect removal method capable of removing defects of a semiconductor substrate with high accuracy, and a pattern forming method and a method of manufacturing an electronic device using the semiconductor substrate from which defects on a surface are removed. The defect removal device includes: a first light source unit that emits incidence light for detecting a defect on a semiconductor substrate; a surface defect measurement unit including a detection unit that detects the defect on the semiconductor substrate based on radiated light radiated by reflection or scattering of the incidence light from the defect of the semiconductor substrate; a removal unit that irradiates the semiconductor substrate with laser light to remove the defect based on position information of the defect on the semiconductor substrate; and an alignment unit that adjusts optical axes of the incidence light and the laser light, in which the optical axes of the incidence light and the laser light are adjusted by the alignment unit such that the incidence light and the laser light are emitted to the semiconductor substrate.
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