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    Method for forming a variable capacitor
    3.
    发明授权
    Method for forming a variable capacitor 有权
    形成可变电容器的方法

    公开(公告)号：US07565725B2

    公开(公告)日：2009-07-28

    申请号：US11512731

    申请日：2006-08-30

    申请人： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

    发明人： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

    IPC分类号： H01G7/00

    CPC分类号： H01G5/16 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T83/0476 ,  Y10T83/0505 ,  Y10T83/051 ,  Y10T83/0577

    摘要： A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

    摘要翻译： 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。

    Method for making an electromechanical component on a plane substrate
    5.
    发明授权
    Method for making an electromechanical component on a plane substrate 有权
    在平面基板上制造机电部件的方法

    公开(公告)号：US07625772B2

    公开(公告)日：2009-12-01

    申请号：US11904859

    申请日：2007-09-27

    申请人： Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

    发明人： Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

    IPC分类号： H01L21/00

    CPC分类号： B81C1/0065 ,  B81B2201/0271 ,  B81B2207/015 ,  H03H3/0073 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/02496

    摘要： Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

    摘要翻译： 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤：基底的形成，其包括由两个绝缘区域部分覆盖的一个硅区域，通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层，形成 通过外延的强掺杂硅层，包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域，同时形成振动结构和致动电极，通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间，通过选择性蚀刻消除所述牺牲硅和锗合金层。

    MOS transistor with a deformable gate
    6.
    发明授权
    MOS transistor with a deformable gate 有权
    具有可变形栅极的MOS晶体管

    公开(公告)号：US07304358B2

    公开(公告)日：2007-12-04

    申请号：US11227624

    申请日：2005-09-15

    申请人： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    发明人： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    IPC分类号： H01L29/84

    CPC分类号： G01P15/124 ,  B81B3/0035 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0109 ,  G01L1/005 ,  G01L9/0098 ,  H03B5/12 ,  H03B5/1237 ,  H03B5/30

    摘要： A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

    摘要翻译： 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。

    MOS transistor with a deformable gate
    8.
    发明申请
    MOS transistor with a deformable gate 有权
    具有可变形栅极的MOS晶体管

    公开(公告)号：US20060054984A1

    公开(公告)日：2006-03-16

    申请号：US11227624

    申请日：2005-09-15

    申请人： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    发明人： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    IPC分类号： H01L29/84

    CPC分类号： G01P15/124 ,  B81B3/0035 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0109 ,  G01L1/005 ,  G01L9/0098 ,  H03B5/12 ,  H03B5/1237 ,  H03B5/30

    摘要： A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

    摘要翻译： 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。