Methods for fabricating patterned features utilizing imprint lithography
    1.
    发明授权
    Methods for fabricating patterned features utilizing imprint lithography 有权
    使用压印光刻制造图案特征的方法

    公开(公告)号:US07122482B2

    公开(公告)日:2006-10-17

    申请号:US10694284

    申请日:2003-10-27

    IPC分类号: H01L21/302 H01L21/461

    摘要: One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate, the first layer comprising at least one layer of a first material, which one layer abuts the surface of the substrate; (b) forming a second layer of a second material on at least a portion of the first layer, which second layer is imprinted with the patterned features; (c) removing at least portions of the second layer to extend the patterned features to the first layer; and (d) removing at least portions of the first layer to extend the patterned features to the substrate; wherein the first layer and the second layer may be exposed to an etching process that undercuts the patterned features, and the first material may be lifted-off.

    摘要翻译: 本发明的一个实施例是一种用于在衬底上产生图案化特征的方法,其包括:(a)在衬底的表面的至少一部分上形成第一层,第一层包括至少一层第一材料 其中一层邻接衬底的表面; (b)在所述第一层的至少一部分上形成第二材料的第二层,所述第二层被印刷所述图案化特征; (c)去除所述第二层的至少一部分以将所述图案化特征延伸到所述第一层; 和(d)去除所述第一层的至少一部分以将所述图案化特征延伸到所述基底; 其中第一层和第二层可以暴露于蚀刻过程,其蚀刻图案化的特征,并且第一材料可以被剥离。

    Low-K dielectric functional imprinting materials
    2.
    发明授权
    Low-K dielectric functional imprinting materials 有权
    低K电介质功能压印材料

    公开(公告)号:US08889332B2

    公开(公告)日:2014-11-18

    申请号:US13172350

    申请日:2011-06-29

    IPC分类号: G03F7/028 G03F7/038 G03F7/075

    摘要: A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.

    摘要翻译: 可聚合组合物包括选自组成为RSiO 1.5的倍半硅氧烷,部分缩合的烷氧基硅烷,具有组成为RSiO 3和R 2 SiO 2的有机改性硅酸盐和具有组成SiOR 4的部分缩合的原硅酸盐的有机改性硅酸盐,其中R是有机 取代基; 可分解的有机化合物; 光引发剂; 和脱模剂。 组合物在暴露于UV辐射下聚合以形成无机二氧化硅网络,并且可分解有机化合物在暴露于热量时分解,以在无机二氧化硅网络中形成孔隙。 组合物可以用于在集成电路器件中形成图案化的介电层。 金属膜可以设置在图案化的介电层上,然后平坦化。

    Materials for imprint lithography
    3.
    发明授权
    Materials for imprint lithography 有权
    压印光刻材料

    公开(公告)号:US08076386B2

    公开(公告)日:2011-12-13

    申请号:US10784911

    申请日:2004-02-23

    摘要: The present invention is directed to a material for use in imprint lithography that features a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary the viscosity in response thereto, with the composition, in a liquid state, having the viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.

    摘要翻译: 本发明涉及一种用于压印光刻的材料,其特征在于具有与之相关的粘度的组合物,并且包括表面活性剂,可聚合组分和响应于刺激物的引发剂以响应于其而改变粘度, 在液体状态下,其粘度低于约100厘泊,蒸气压小于约20托,并且在固体固化状态下,拉伸模量大于约100MPa,断裂应力大于约3MPa 并且断裂伸长率大于约2%。

    Method to reduce adhesion between a conformable region and a pattern of a mold
    6.
    发明授权
    Method to reduce adhesion between a conformable region and a pattern of a mold 有权
    降低适形区域和模具图案之间粘合的方法

    公开(公告)号:US07157036B2

    公开(公告)日:2007-01-02

    申请号:US10463396

    申请日:2003-06-17

    IPC分类号: B29C59/00 B29C33/60

    摘要: The present invention provides a method to reduce adhesion between a conformable region on a substrate and a pattern of a mold, which selectively comes into contact with the conformable region. The method features forming a conformable material on the substrate and contacting the conformable material with the surface. A conditioned layer is formed from the conformable material. The conditioned layer has first and second sub-portions, with the first sub-portion being solidified and the second sub-portion having a first affinity for the surface and a second affinity for the first sub-portion. The first affinity is greater than the second affinity. In this fashion, upon separation of the mold from the conditioned layer, a subset of the second sub-portion maintains contact with the mold, thereby reducing the probability that a pattern formed in the conditioned layer becomes compromised. These and other embodiments are described herein.

    摘要翻译: 本发明提供一种降低基材上的适形区域和选择性地与适形区域接触的模具图案之间的粘附性的方法。 该方法的特征在于在基底上形成适形材料并使适形材料与表面接触。 由适形材料形成调理层。 调理层具有第一和第二子部分,其中第一子部分被固化,第二子部分对于表面具有第一亲和力,对第一子部分具有第二亲和力。 第一亲和力大于第二亲和力。 以这种方式,在模具与调理层分离时,第二子部分的子集保持与模具的接触,从而降低在调理层中形成的图案变得损害的可能性。 这些和其他实施例在本文中描述。

    Composition for an etching mask comprising a silicon-containing material
    7.
    发明授权
    Composition for an etching mask comprising a silicon-containing material 有权
    包含含硅材料的蚀刻掩模的组合物

    公开(公告)号:US07122079B2

    公开(公告)日:2006-10-17

    申请号:US10789319

    申请日:2004-02-27

    IPC分类号: C08L83/00

    摘要: The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

    摘要翻译: 本发明包括用作下层的蚀刻掩模的含硅材料用组合物。 更具体地,含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。 为此,在本发明的一个实施方案中,组合物包括羟基官能的硅氧烷组分,交联组分,催化剂组分和溶剂。 该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻,同时最小化与凹陷叠加的段的蚀刻,并且因此允许形成原位硬化的掩模 通过含硅材料,硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

    Composition for an etching mask comprising a silicon-containing material
    8.
    发明授权
    Composition for an etching mask comprising a silicon-containing material 有权
    包含含硅材料的蚀刻掩模的组合物

    公开(公告)号:US07906180B2

    公开(公告)日:2011-03-15

    申请号:US11508765

    申请日:2006-08-23

    IPC分类号: B05D3/02 C08L9/04

    摘要: The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

    摘要翻译: 本发明包括用作下层的蚀刻掩模的含硅材料用组合物。 更具体地,含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。 为此,在本发明的一个实施方案中,组合物包括羟基官能的硅氧烷组分,交联组分,催化剂组分和溶剂。 该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻,同时最小化与凹陷叠加的段的蚀刻,并且因此允许形成原位硬化的掩模 通过含硅材料,硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

    Method to arrange features on a substrate to replicate features having minimal dimensional variability
    10.
    发明授权
    Method to arrange features on a substrate to replicate features having minimal dimensional variability 有权
    在衬底上布置特征以复制具有最小尺寸变化性的特征的方法

    公开(公告)号:US08349241B2

    公开(公告)日:2013-01-08

    申请号:US10264960

    申请日:2002-10-04

    IPC分类号: B29C35/00 B29C43/00

    摘要: The present invention is directed to a method of and a mold for arranging features on a substrate to replicate the features with minimal dimensional variability. The method includes arranging features on a layer to minimize thickness variations in the layer that are attributable to density variations of the plurality of features on the layer. The features are transferred into an underlying substrate. It is believed that by forming the features so as to define a uniform fill factor in the layer, the thickness variations may be reduced, if not abrogated. To that end, one method in accordance with the present invention includes forming a flowable material on the substrate. Thereafter, a plurality of features is formed in a region of the flowable material. The plurality of features are arranged to provide a substantially uniform fill factor in the region.

    摘要翻译: 本发明涉及一种用于在基板上排列特征以用最小的尺寸变化来复制特征的方法和模具。 该方法包括在层上布置特征以使层中的厚度变化最小化,这可归因于该层上的多个特征的密度变化。 这些特征被转移到下面的基底中。 相信通过形成特征以在层中限定均匀的填充因子,如果不被废除,则可以减小厚度变化。 为此,根据本发明的一种方法包括在基底上形成可流动的材料。 此后,在可流动材料的区域中形成多个特征。 多个特征被布置成在该区域中提供基本均匀的填充因子。