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20 条记录 (耗时 0.018 秒)

    Double chirped mirror
    1.
    发明授权
    Double chirped mirror 有权
    双啁啾镜

    公开(公告)号：US06462878B1

    公开(公告)日：2002-10-08

    申请号：US09930606

    申请日：2001-08-15

    申请人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

    发明人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

    IPC分类号： G02B528

    CPC分类号： H01S3/08059 ,  H01S3/08004

    摘要： The invention is a double chirped mirror and a method of constructing a double chirped mirror for a frequency range of electromagnetic radiation, comprising specifying a design including a plurality of layers, the plurality of layers being transparent to the electromagnetic radiation and having refractive indices which vary between layers in the plurality of layers, and wherein for a first set of layers the optical thickness of alternate layers in the set of layers varies monotonically and the total optical thickness of a layer and the two adjacent half layers in the set of layers varies monotonically. The design is optimized by adjusting the optical thickness of layers in the plurality of layers.

    摘要翻译： 本发明是一种双啁啾反射镜和一种构造电磁辐射频率范围的双啁啾反射镜的方法，其特征在于包括规定包括多个层的设计，所述多个层对电磁辐射是透明的，并且具有变化的折射率 在多个层中的层之间，并且其中对于第一组层，该组层中的交替层的光学厚度单调变化，并且该组层中的层和两个相邻的半层的总光学厚度单调变化 。 通过调整多个层中的层的光学厚度来优化设计。

    Double chirped mirror
    2.
    发明授权
    Double chirped mirror 失效
    双啁啾镜

    公开(公告)号：US06301049B1

    公开(公告)日：2001-10-09

    申请号：US09080904

    申请日：1998-05-18

    申请人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

    发明人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

    IPC分类号： G02B528

    CPC分类号： H01S3/08059 ,  H01S3/08004

    摘要： The invention is a double chirped mirror and a method of constructing a double chirped mirror for a frequency range of electromagnetic radiation, comprising specifying a design including a plurality of layers, the plurality of layers being transparent to the electromagnetic radiation and having refractive indices which vary between layers in the plurality of layers, and wherein for a first set of layers the optical thickness of alternate layers in the set of layers varies monotonically and the total optical thickness of a layer and the two adjacent half layers in the set of layers varies monotonically. The design is optimized by adjusting the optical thickness of layers in the plurality of layers.

    摘要翻译： 本发明是一种双啁啾反射镜和一种构造电磁辐射频率范围的双啁啾反射镜的方法，其特征在于包括规定包括多个层的设计，所述多个层对电磁辐射是透明的，并且具有变化的折射率 在多个层中的层之间，并且其中对于第一组层，该组层中的交替层的光学厚度单调变化，并且该组层中的层和两个相邻的半层的总光学厚度单调变化 。 通过调整多个层中的层的光学厚度来优化设计。

    Method and dielectric and/or semiconductor device for influencing the dispersion of electromagnetic radiation
    3.
    发明授权
    Method and dielectric and/or semiconductor device for influencing the dispersion of electromagnetic radiation 有权
    用于影响电磁辐射分散的方法和电介质和/或半导体器件

    公开(公告)号：US06256434B1

    公开(公告)日：2001-07-03

    申请号：US09352248

    申请日：1999-07-13

    申请人： Nicolai Matuschek ,  Dirk H. Sutter ,  Lukas Gallmann ,  Guenter Steinmeyer ,  Ursula Keller

    发明人： Nicolai Matuschek ,  Dirk H. Sutter ,  Lukas Gallmann ,  Guenter Steinmeyer ,  Ursula Keller

    IPC分类号： G02B634

    CPC分类号： H01S3/0627 ,  G02B1/115 ,  G02B6/29361 ,  G02B6/29394 ,  H01S3/0057 ,  H01S3/0606 ,  H01S3/0621 ,  H01S3/08059 ,  H01S3/08095 ,  H01S5/0057 ,  H01S5/028

    摘要： The dielectric and/or semiconductor device influences the dispersion of electromagnetic radiation within a given spectral range. It comprises a substrate being essentially transparent to said electromagnetic radiation. The substrate has a first surface for incoupling said electromagnetic radiation into said substrate, and a second surface. The device further comprises a reflective multilayer structure on said second surface, said multilayer structure providing a controlled dispersion characteristic upon reflection of said electromagnetic radiation, e.g., a chirped mirror. The device is arranged in such a way that there is essentially no interference of electromagnetic radiation propagating in the direction of said multilayer structure and electromagnetic radiation reflected by said multilayer structure. An antireflection coating may be provided on the first surface of the substrate. With this device, oscillations in the group delay dispersion can almost completely be avoided.

    摘要翻译： 电介质和/或半导体器件影响电磁辐射在给定光谱范围内的色散。 它包括对所述电磁辐射基本上透明的衬底。 衬底具有用于将所述电磁辐射耦合到所述衬底中的第一表面和第二表面。 该装置还包括在所述第二表面上的反射多层结构，所述多层结构在所述电磁辐射例如啁啾反射镜反射时提供受控的色散特性。 该装置的布置方式是基本上不存在在所述多层结构的方向上传播的电磁辐射的干扰和由所述多层结构反射的电磁辐射的干扰。 可以在基板的第一表面上设置抗反射涂层。 使用该装置，群延迟色散的振荡几乎可以完全避免。

    Pulse-generating laser
    4.
    发明授权
    Pulse-generating laser 有权
    脉冲发生激光

    公开(公告)号：US06778565B2

    公开(公告)日：2004-08-17

    申请号：US10288114

    申请日：2002-11-05

    申请人： Gabriel J. Spuehler ,  Lukas Krainer ,  Kurt Weingarten ,  Rudiger Paschotta ,  Ursula Keller

    发明人： Gabriel J. Spuehler ,  Lukas Krainer ,  Kurt Weingarten ,  Rudiger Paschotta ,  Ursula Keller

    IPC分类号： H01S310

    CPC分类号： H01S3/1118 ,  H01S3/0604 ,  H01S3/0815 ,  H01S3/1307 ,  H01S3/1608 ,  H01S3/1618 ,  H01S3/17 ,  H01S2302/00

    摘要： An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.

    摘要翻译： 公开了一种具有Er：Yb：掺杂固态增益元件的光泵浦激光器，其通过可饱和吸收镜被动锁模。 激光器被设计为以超过1GHz的基本重复频率操作，优选地在1525nm和1570nm之间的有效波长下操作。 与现有技术的固态脉冲激光器相比，Q开关锁定操作的阈值显着提高。 因此，根据一个实施例，激光器实现超过40GHz的重复率。 激光器优选地包括用于波长调谐和重复率锁定的装置。

    Antiresonant Fabry-Perot p-i-n modulator
    5.
    发明授权
    Antiresonant Fabry-Perot p-i-n modulator 失效
    反谐振法布里 - 珀罗p-i-n调制器

    公开(公告)号：US5345454A

    公开(公告)日：1994-09-06

    申请号：US10029

    申请日：1993-01-27

    申请人： Ursula Keller

    发明人： Ursula Keller

    IPC分类号： G02F1/21 ,  G02F1/35 ,  H01S3/098 ,  H01S3/108 ,  H01S3/113

    CPC分类号： H01S3/1109 ,  G02F1/218 ,  G02F1/3523 ,  H01S3/1118 ,  G02F2203/26 ,  H01S3/0817

    摘要： The advantages of both active and passive modelocking techniques are realized within a single device by providing a p-i-n modulator formed at antiresonance within a Fabry-Perot etalon. The p-i-n modulator actively modulates light within the laser cavity by introducing periodic loss in response to changing voltages applied to the modulator. The p-i-n modulator includes an intrinsic region that is disposed between a p-doped region and an n-doped region. The modelocking performance of the p-i-n modulator is enhanced by the saturable absorber action of the intrinsic region.

    摘要翻译： 通过提供在法布里 - 珀罗标准具内以反谐振器形成的p-i-n调制器，在单个器件内实现主动和被动锁模技术的优点。 p-i-n调制器通过响应于施加到调制器的变化的电压引入周期性损耗来主动调制激光腔内的光。 p-i-n调制器包括设置在p掺杂区域和n掺杂区域之间的本征区域。 通过本征区域的可饱和吸收剂作用增强了p-i-n调制器的锁模性能。

    Nonlinear external cavity modelocked laser
    7.
    发明授权
    Nonlinear external cavity modelocked laser 失效
    非线性外腔锁模激光器

    公开(公告)号：US5007059A

    公开(公告)日：1991-04-09

    申请号：US523622

    申请日：1990-05-15

    申请人： Ursula Keller ,  Wayne H. Knox

    发明人： Ursula Keller ,  Wayne H. Knox

    IPC分类号： H01S3/098 ,  H01S3/108 ,  H01S5/065 ,  H01S5/14

    CPC分类号： H01S3/1112 ,  H01S3/08027 ,  H01S3/082 ,  H01S3/105 ,  H01S3/1115

    摘要： Modelocking of a solid state laser such as a Ti:Al.sub.2 O.sub.3 laser is achieved by employing an external cavity defined by spatially separated reflective elements wherein at least one of the reflective elements exhibits a nonlinear characteristic in response to an impinging light beam. Exemplary nonlinear reflective elements are described using bulk semiconductor material or semiconductor quantum well structures integrated with a rear reflector such as a stack of quarter-wave thick dielectric or semiconductor material. Tuning control of the nonlinear reflective element may be introduced with temperature control arrangements and with mechanical translation arrangements in conjunction with lateral band gap engineering of the semiconductor material.

    High-repetition-rate passively mode-locked solid-state laser
    10.
    发明授权
    High-repetition-rate passively mode-locked solid-state laser 有权
    高重复率被动锁模固态激光器

    公开(公告)号：US07106764B1

    公开(公告)日：2006-09-12

    申请号：US10343056

    申请日：2000-07-27

    申请人： Kurt J. Weingarten ,  Lukas Krainer ,  Ursula Keller ,  Rüdiger Paschotta

    发明人： Kurt J. Weingarten ,  Lukas Krainer ,  Ursula Keller ,  Rüdiger Paschotta

    IPC分类号： H01S3/098

    CPC分类号： H01S3/1118 ,  H01S3/113

    摘要： A passively mode-locked solid-state laser is designed to emit a continuous-wave train (51, 52) of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching instabilities. The laser includes an optical resonator (3.1), a solid-state laser gain element (2) placed inside the optical resonator (3.1), a device (1) for exciting said laser gain element (2) to emit electromagnetic radiation having the effective wavelength, and a device (4) for passive mode locking including a saturable absorber. The laser gain element (2) is a laser material with a stimulated emission cross section exceeding 0.8×10−18 cm2 at the effective wavelength, and is made of Nd:vanadate. The saturable absorber (4) is preferably a semiconductor saturable absorber mirror (SESAM) device. Even higher repetition rates are achieved by operating the laser in the soliton regime. For use in fiber-optical telecommunication, the laser wavelength is preferably shifted to 1.5 μm by use of an optical parametric oscillator. The laser is simple, robust, compact, efficient, and low-cost. It generates a relatively large average power of 100 mW and higher, which is useful for a number of optical probing and detection applications, in a beam (51, 52) that is substantially a fundamental spatial mode.

    摘要翻译： 被动锁模固态激光器被设计为发射电磁辐射脉冲的连续波列（51,52），发射脉冲的基本重复频率超过1GHz，没有Q切换不稳定性。 激光器包括光谐振器（3.1），放置在光学谐振器（3.1）内部的固态激光增益元件（2），用于激发所述激光增益元件（2）以发射具有有效 以及用于被动模式锁定的装置（4），包括可饱和吸收体。 激光增益元件（2）是在有效波长处具有超过0.8×10 -8 cm 2的受激发射横截面的激光材料，并且由Nd：钒酸盐 。 可饱和吸收体（4）优选为半导体可饱和吸收镜（SESAM）装置。 通过在孤子状态下操作激光器来实现更高的重复率。 为了在光纤通信中使用，通过使用光学参量振荡器，激光波长优选地移位到1.5μm。 激光器简单，坚固，紧凑，高效，低成本。 在基本上是基本空间模式的光束（51,52）中，其产生100mW及更高的相对大的平均功率，这对于许多光学探测和检测应用是有用的。