公开(公告)号：US06462878B1

公开(公告)日：2002-10-08

申请号：US09930606

申请日：2001-08-15

申请人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

发明人： Franz X. Kärtner ,  Nicolai Matuschek ,  Ursula Keller

IPC分类号： G02B528

CPC分类号： H01S3/08059 ,  H01S3/08004

摘要： The invention is a double chirped mirror and a method of constructing a double chirped mirror for a frequency range of electromagnetic radiation, comprising specifying a design including a plurality of layers, the plurality of layers being transparent to the electromagnetic radiation and having refractive indices which vary between layers in the plurality of layers, and wherein for a first set of layers the optical thickness of alternate layers in the set of layers varies monotonically and the total optical thickness of a layer and the two adjacent half layers in the set of layers varies monotonically. The design is optimized by adjusting the optical thickness of layers in the plurality of layers.

摘要翻译： 本发明是一种双啁啾反射镜和一种构造电磁辐射频率范围的双啁啾反射镜的方法，其特征在于包括规定包括多个层的设计，所述多个层对电磁辐射是透明的，并且具有变化的折射率 在多个层中的层之间，并且其中对于第一组层，该组层中的交替层的光学厚度单调变化，并且该组层中的层和两个相邻的半层的总光学厚度单调变化 。 通过调整多个层中的层的光学厚度来优化设计。

公开(公告)号：US5345454A

公开(公告)日：1994-09-06

申请号：US10029

申请日：1993-01-27

申请人： Ursula Keller

发明人： Ursula Keller

IPC分类号： G02F1/21 ,  G02F1/35 ,  H01S3/098 ,  H01S3/108 ,  H01S3/113

CPC分类号： H01S3/1109 ,  G02F1/218 ,  G02F1/3523 ,  H01S3/1118 ,  G02F2203/26 ,  H01S3/0817

摘要： The advantages of both active and passive modelocking techniques are realized within a single device by providing a p-i-n modulator formed at antiresonance within a Fabry-Perot etalon. The p-i-n modulator actively modulates light within the laser cavity by introducing periodic loss in response to changing voltages applied to the modulator. The p-i-n modulator includes an intrinsic region that is disposed between a p-doped region and an n-doped region. The modelocking performance of the p-i-n modulator is enhanced by the saturable absorber action of the intrinsic region.

摘要翻译： 通过提供在法布里 - 珀罗标准具内以反谐振器形成的p-i-n调制器，在单个器件内实现主动和被动锁模技术的优点。 p-i-n调制器通过响应于施加到调制器的变化的电压引入周期性损耗来主动调制激光腔内的光。 p-i-n调制器包括设置在p掺杂区域和n掺杂区域之间的本征区域。 通过本征区域的可饱和吸收剂作用增强了p-i-n调制器的锁模性能。

公开(公告)号：US5278855A

公开(公告)日：1994-01-11

申请号：US880928

申请日：1992-05-11

申请人： Gloria R. Jacobovitz-Veselka ,  Ursula Keller

发明人： Gloria R. Jacobovitz-Veselka ,  Ursula Keller

IPC分类号： G02F1/35 ,  G02F1/355 ,  H01S3/08 ,  H01S3/098 ,  H01S3/106 ,  H01S3/108 ,  H01S3/11 ,  H01S3/113 ,  H01S5/00 ,  H01S3/19

CPC分类号： B82Y20/00 ,  G02F1/3523 ,  H01S3/113 ,  G02F1/3556 ,  H01S3/1061 ,  H01S3/1118

摘要： Extended wavelength tunability is achieved in a saturable absorber for applications such as modelocking lasers by realizing a semiconductor structure having a tapered energy bandgap profile in a portion of the saturable absorber wherein the profile is given as a function of the distance along the propagation axis of the saturable absorber. For certain applications, at least one mirror is monolithically integrated with the saturable absorber.

摘要翻译： 通过实现在可饱和吸收体的一部分中具有锥形能带隙轮廓的半导体结构，在可饱和吸收器中实现扩展波长可调性，用于诸如锁模激光器的应用，其中，轮廓作为沿着传播轴的距离的函数给出 可饱和吸收器。 对于某些应用，至少一个反射镜与可饱和吸收体单片集成。

公开(公告)号：US5007059A

公开(公告)日：1991-04-09

申请号：US523622

申请日：1990-05-15

申请人： Ursula Keller ,  Wayne H. Knox

发明人： Ursula Keller ,  Wayne H. Knox

IPC分类号： H01S3/098 ,  H01S3/108 ,  H01S5/065 ,  H01S5/14

CPC分类号： H01S3/1112 ,  H01S3/08027 ,  H01S3/082 ,  H01S3/105 ,  H01S3/1115

摘要： Modelocking of a solid state laser such as a Ti:Al.sub.2 O.sub.3 laser is achieved by employing an external cavity defined by spatially separated reflective elements wherein at least one of the reflective elements exhibits a nonlinear characteristic in response to an impinging light beam. Exemplary nonlinear reflective elements are described using bulk semiconductor material or semiconductor quantum well structures integrated with a rear reflector such as a stack of quarter-wave thick dielectric or semiconductor material. Tuning control of the nonlinear reflective element may be introduced with temperature control arrangements and with mechanical translation arrangements in conjunction with lateral band gap engineering of the semiconductor material.

公开(公告)号：US06778565B2

公开(公告)日：2004-08-17

申请号：US10288114

申请日：2002-11-05

申请人： Gabriel J. Spuehler ,  Lukas Krainer ,  Kurt Weingarten ,  Rudiger Paschotta ,  Ursula Keller

发明人： Gabriel J. Spuehler ,  Lukas Krainer ,  Kurt Weingarten ,  Rudiger Paschotta ,  Ursula Keller

IPC分类号： H01S310

CPC分类号： H01S3/1118 ,  H01S3/0604 ,  H01S3/0815 ,  H01S3/1307 ,  H01S3/1608 ,  H01S3/1618 ,  H01S3/17 ,  H01S2302/00

摘要： An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.

摘要翻译： 公开了一种具有Er：Yb：掺杂固态增益元件的光泵浦激光器，其通过可饱和吸收镜被动锁模。 激光器被设计为以超过1GHz的基本重复频率操作，优选地在1525nm和1570nm之间的有效波长下操作。 与现有技术的固态脉冲激光器相比，Q开关锁定操作的阈值显着提高。 因此，根据一个实施例，激光器实现超过40GHz的重复率。 激光器优选地包括用于波长调谐和重复率锁定的装置。

公开(公告)号：US20070223540A1

公开(公告)日：2007-09-27

申请号：US11627673

申请日：2007-01-26

申请人： Thomas Sudmeyer ,  Sergio Marchese ,  Ursula Keller

发明人： Thomas Sudmeyer ,  Sergio Marchese ,  Ursula Keller

IPC分类号： H01S3/098

CPC分类号： H01S3/0604 ,  H01S3/027 ,  H01S3/081 ,  H01S3/1118

摘要： The invention concerning a pulsed laser is provided and includes an optical resonator being defined by at least two reflective elements, and the optical resonator defining a laser radiation beam path; the laser further including a solid-state gain structure arranged so as to be in the beam path, the gain structure being operable to emit laser radiation by stimulated emission upon being pumped; a housing operable of maintaining a vacuum or gas composition different from ambient gas within the housing, the housing defining an inside, which encloses at least a part of the optical resonator, so that at least a part of the beam path proceeds within the housing; and a mode locker arranged so as to be in the beam path; wherein the gas composition and/or gas pressure in the housing is controlled, and a gas mixture inside the housing has an optical nonlinearity which is lower than the nonlinearity of air.

摘要翻译： 提供了关于脉冲激光器的发明，并且包括由至少两个反射元件限定的光学谐振器，并且光学谐振器限定激光辐射束路径; 所述激光器还包括布置成处于所述光束路径中的固态增益结构，所述增益结构可操作以在被泵浦时通过受激发射发射激光辐射; 壳体，其可操作以保持与所述壳体内的环境气体不同的真空或气体组成，所述壳体限定内部，所述内部包围所述光学谐振器的至少一部分，使得所述光束路径的至少一部分在所述壳体内进行; 以及布置成处于所述光束路径中的模式锁定器; 其中壳体中的气体组成和/或气体压力被控制，并且壳体内部的气体混合物具有低于空气非线性的光学非线性。

公开(公告)号：US20060029112A1

公开(公告)日：2006-02-09

申请号：US10814050

申请日：2004-03-31

申请人： Ian Young ,  Ursula Keller ,  Heiko Unold ,  Rudiger Paschotta ,  Silke Schon

发明人： Ian Young ,  Ursula Keller ,  Heiko Unold ,  Rudiger Paschotta ,  Silke Schon

IPC分类号： H01S3/30

CPC分类号： G06F1/105 ,  H01S3/0092 ,  H01S3/0604 ,  H01S3/0615 ,  H01S3/0627 ,  H01S3/094084 ,  H01S3/1115 ,  H01S3/1118 ,  H01S5/024 ,  H01S5/041 ,  H01S5/0609 ,  H01S5/0657 ,  H01S5/141 ,  H01S5/18302 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/423

摘要： A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a saturation fluence of the gain region.

摘要翻译： 具有集成吸收体的表面发射激光器（SEL）。 下反射镜和输出耦合器限定SEL的激光腔。 位于激光腔中的单片增益结构包括增益区和吸收体，其中吸收体的饱和能量密度小于增益区的饱和能量密度。

公开(公告)号：US06735234B1

公开(公告)日：2004-05-11

申请号：US09502959

申请日：2000-02-11

申请人： Ruediger Paschotta ,  Reto Haering ,  Ursula Keller

发明人： Ruediger Paschotta ,  Reto Haering ,  Ursula Keller

IPC分类号： H01S3091

CPC分类号： H01S5/141 ,  H01S3/094069 ,  H01S3/1118 ,  H01S5/041 ,  H01S5/0601 ,  H01S5/0657 ,  H01S5/183 ,  H01S5/2036

摘要： A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber mirror (SESAM) which forms part of an external cavity. Both the beam-quality limitations of edge-emitting lasers, and the power restrictions of electrically pumped surface-emitting lasers are overcome. The laser uses a semiconductor wafer in which a stack of quantum wells is grown adjacent to a single Bragg-mirror structure. Light from one or more multi-mode high-power diode lasers is focused onto the face of the wafer and pumps the wells by absorption in the barrier regions. The area of the laser mode on the active mirror can be about 104 times larger than the mode area on the facet of an edge-emitting laser, offering scope for the generation of high average power and large pulse energy. At the same time the external cavity enforces fundamental mode operation in a circular, near-diffraction-limited beam. With the laser, sub-picosecond pulse durations are achievable by eliminating coupled cavity effects and by external pulse compression. Band-gap engineering can be used to shape the pulses, or even integrate gain and saturable absorption within the same wafer. Thus, rugged, efficient pulsed laser sources with high average power in a nearly diffraction-limited beam, sub-picosecond pulse durations and multi-GHz repetition rates, which operate in a broad range of wavelengths accessible by bandgap engineering are made possible.

摘要翻译： 公开了被动锁模光泵浦半导体垂直 - 外腔表面发射激光器（OPS-EXSEL）。 激光器由形成外部腔体的一部分的半导体可饱和吸收镜（SESAM）模式锁定。 边缘发射激光器的光束质量限制以及电泵浦表面发射激光器的功率限制都被克服。 激光器使用半导体晶片，其中量子阱的堆叠生长成与单个布拉格 - 反射镜结构相邻。 来自一个或多个多模式大功率二极管激光器的光聚焦在晶片的表面上并通过在屏障区域中的吸收来泵浦阱。 有源反射镜上激光模式的面积可以比边缘发射激光器面上的模式面积大10倍，为生成高平均功率和大脉冲能量提供了可能。 同时，外部腔体在圆形，近衍射极限的光束中执行基模操作。 通过激光，可以通过消除耦合腔效应和外部脉冲压缩来实现亚皮秒脉冲持续时间。 带隙工程可用于对脉冲进行整形，甚至将增益和可饱和吸收集成在同一晶片内。 因此，在接近衍射受限的光束，亚皮秒脉冲持续时间和多GHz重复频率下具有高平均功率的坚固，高效的脉冲激光源可以通过带隙工程可访问的宽波长范围内工作。

公开(公告)号：US06551850B1

公开(公告)日：2003-04-22

申请号：US09698557

申请日：2000-10-27

申请人： Ursula Keller ,  Uwe Siegner ,  Markus Haiml

发明人： Ursula Keller ,  Uwe Siegner ,  Markus Haiml

IPC分类号： H01L2100

CPC分类号： H01S3/1118 ,  G02F1/3523 ,  G02F1/3551

摘要： Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentration of 3·1019 cm−3, then the response time is reduced from 480 fs (curve 1.1) to 110 fs (curve 3.1), without the absorption modulation being reduced by this or the non-saturable absorption losses being increased. Semiconductor materials, during the production of which at least one of the above measures was implemented, manifest influenceable, in particular short response times as well as simultaneously high absorption modulations and low non-saturable absorption losses. For this reason, they are eminently suitable for non-linear optical applications, such as optical information processing, optical communication or ultrashort laser pulse physics.

摘要翻译： 通过以下措施可以显着改善在低温下生长的半导体材料的基本非线性光学材料特性：用外来原子掺杂和/或额外的热退火。 如果例如在300℃生长的GaAs被掺杂为Be至3.1019cm-3的浓度，则响应时间从480fs（曲线1.1）降低到110fs（曲线3.1），而没有吸收调制 由此减少或不可饱和的吸收损失增加。 半导体材料在生产中至少采用上述措施之一时，显示出可以影响的特别是短的响应时间以及同时高的吸收调制和低不可饱和的吸收损失。 因此，它们非常适用于光学信息处理，光通信或超短激光脉冲物理等非线性光学应用。

公开(公告)号：US06256434B1

公开(公告)日：2001-07-03

申请号：US09352248

申请日：1999-07-13

申请人： Nicolai Matuschek ,  Dirk H. Sutter ,  Lukas Gallmann ,  Guenter Steinmeyer ,  Ursula Keller

发明人： Nicolai Matuschek ,  Dirk H. Sutter ,  Lukas Gallmann ,  Guenter Steinmeyer ,  Ursula Keller

IPC分类号： G02B634

CPC分类号： H01S3/0627 ,  G02B1/115 ,  G02B6/29361 ,  G02B6/29394 ,  H01S3/0057 ,  H01S3/0606 ,  H01S3/0621 ,  H01S3/08059 ,  H01S3/08095 ,  H01S5/0057 ,  H01S5/028

摘要： The dielectric and/or semiconductor device influences the dispersion of electromagnetic radiation within a given spectral range. It comprises a substrate being essentially transparent to said electromagnetic radiation. The substrate has a first surface for incoupling said electromagnetic radiation into said substrate, and a second surface. The device further comprises a reflective multilayer structure on said second surface, said multilayer structure providing a controlled dispersion characteristic upon reflection of said electromagnetic radiation, e.g., a chirped mirror. The device is arranged in such a way that there is essentially no interference of electromagnetic radiation propagating in the direction of said multilayer structure and electromagnetic radiation reflected by said multilayer structure. An antireflection coating may be provided on the first surface of the substrate. With this device, oscillations in the group delay dispersion can almost completely be avoided.

摘要翻译： 电介质和/或半导体器件影响电磁辐射在给定光谱范围内的色散。 它包括对所述电磁辐射基本上透明的衬底。 衬底具有用于将所述电磁辐射耦合到所述衬底中的第一表面和第二表面。 该装置还包括在所述第二表面上的反射多层结构，所述多层结构在所述电磁辐射例如啁啾反射镜反射时提供受控的色散特性。 该装置的布置方式是基本上不存在在所述多层结构的方向上传播的电磁辐射的干扰和由所述多层结构反射的电磁辐射的干扰。 可以在基板的第一表面上设置抗反射涂层。 使用该装置，群延迟色散的振荡几乎可以完全避免。