摘要:
An automatic transmission including at least one rotary member; a rotary member enclosure enclosing the rotary member; and an oil reservoir arranged below the rotary member enclosure for collecting and reserving the oil. An oil separator is located facing the outer circumference of the rotary member for separating the oil adhering to the rotary member. Because the amount of oil left on the surface of the rotary member is reduced, the amount of oil recovered in the oil reservoir is accordingly increased and the level of the oil surface in the oil reservoir is prevented from falling.
摘要:
A parking control mechanism to prevent generation of noise and shock when a parking range is released after a vehicle has been parked so that a driver does not feel uncomfortable. A parking apparatus of an automatic transmission has a parking gear; a parking pole swingably disposed and provided with a claw arranged to selectively be engaged with a tooth space of the parking gear; an engagement inhibition device movably disposed and arranged to be moved to an inhibition position for inhibiting engagement between the claw and the tooth space and to an inhibition release position for releasing the inhibition of the engagement; and an engagement inhibition release device for moving the engagement inhibition device to the inhibition release position in synchronization with the rotation of the parking gear. After a residual torque existing between the parking gear and drive wheels has been released, the claw and the tooth space are engaged with each other.
摘要:
A formed SiC product having a low degree of light transmittance useful in a variety of heat resistant components such as equalizing rings, dummy wafers, and other components employed in semiconductor manufacturing facilities, and the manufacturing method thereof. The product is a CVD-formed SiC product prepared by growing a coating on a substrate with a CVD process and thereafter removing the substrate. The product is characterized by having at least one SiC layer with different grain characteristics located either on its surface or within the main structure, and having a light transmittance rate of 0.4% or less for the wavelength range from 300 to 2,500 nm, and 2.5% or less for the wavelength range exceeding 2,500 nm. The method for manufacturing the formed SiC product is characterized by forming at least one SiC layer with different grain characteristics either on its surface or within the main structure provided by changing the CVD reaction conditions.
摘要:
A continuously variable speed transmission having a belt drive continuously variable speed transmission in which a belt is wrapped around primary and secondary pulleys each supported on a shaft and each consisting of a pair of sheaves capable of relatively moving axially, and a forward/reverse rotation changeover mechanism. The belt drive continuously variable speed transmission is provided with a pressure adjusting cam mechanism for applying an axial force corresponding to a transmitted torque to at least one of the pulleys, ball screw mechanisms for axially moving the movable sheaves of the pulleys. A fluid torque converter is disposed on the transmission upstream side of the primary pulley. In the belt drive continuously variable speed transmission, the pressure adjusting cam mechanism produces and axial force corresponding to the transmitted torque to clamp the belt, and the power is transmitted by the effect of this clamping force without belt slip. If at the time of vehicle starting the torque of the fluid torque converter is increased, the pressure adjusting cam mechanism produces a larger axial force corresponding to the increased torque, thereby clamping the belt by a larger force to prevent the belt from slipping during transmission of power. This large belt clamping force is produced for only a short time for vehicle starting. As the torque of the fluid torque converter is reduced to a coupling range, the axial force produced by the pressure adjusting cam mechanism is correspondingly reduced automatically. The belt is clamped by a reduced axial force for a greater part of the operating time.
摘要:
A method for easily producing a graphite powder for use as a lithium secondary battery negative electrode material with small specific surface area while reducing energy consumption, and achieving high graphitization efficiency, includes melt-mixing a coke powder and a carbon precursor binder so that an amount of fixed carbon included in the carbon precursor binder is 5 to 15 parts by mass based on 100 parts by mass of the coke powder, to prepare a mixture, and pressing the mixture to prepare a compact, the coke powder being obtained by heating a green coke powder at 600 to 1450° C. in a non-oxidizing atmosphere, the green coke powder having a cumulative particle size at 50% in a volumetric cumulative particle size distribution of 5 to 50 μm; heating the compact in a non-oxidizing atmosphere to effect carbonization and graphitization to obtain a graphitized compact; and grinding the graphitized compact.
摘要:
A nitrogen-doped n-type SiC-formed material consisting of high purity β-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10−3 to 10−5 Ωm. The SiC-formed material is manufactured under conditions of the raw material gas concentration, in terms of the ratio of the raw material flow rate (l/min) to the carrier gas flow rate (l/min), introduced into the CVD reaction chamber, of 5-15 vol %, the nitrogen gas concentration, in terms of the ratio of the nitrogen gas flow rate (l/min) to the raw material gas flow rate (l/min), of 10-120 vol %, and the raw material gas retardation time of 7-110 seconds, wherein, the raw material gas retardation time (sec)={(Effective reaction volume in the reaction chamber (l))/(raw material gas flow rate (l/min))}×{(273+20)/(273+Reaction temperature (° C.))}×60.
摘要:
An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.