Formed SIC product and manufacturing method thereof
    3.
    发明授权
    Formed SIC product and manufacturing method thereof 失效
    形成SIC产品及其制造方法

    公开(公告)号:US06300226B1

    公开(公告)日:2001-10-09

    申请号:US09244302

    申请日:1999-02-03

    IPC分类号: C30B2300

    摘要: A formed SiC product having a low degree of light transmittance useful in a variety of heat resistant components such as equalizing rings, dummy wafers, and other components employed in semiconductor manufacturing facilities, and the manufacturing method thereof. The product is a CVD-formed SiC product prepared by growing a coating on a substrate with a CVD process and thereafter removing the substrate. The product is characterized by having at least one SiC layer with different grain characteristics located either on its surface or within the main structure, and having a light transmittance rate of 0.4% or less for the wavelength range from 300 to 2,500 nm, and 2.5% or less for the wavelength range exceeding 2,500 nm. The method for manufacturing the formed SiC product is characterized by forming at least one SiC layer with different grain characteristics either on its surface or within the main structure provided by changing the CVD reaction conditions.

    摘要翻译: 具有低透光率的成形SiC产品及其制造方法,其可用于各种耐热组分如均化环,假晶片和半导体制造设备中使用的其它组分。 该产品是通过用CVD工艺在衬底上生长涂层并随后除去衬底而制备的CVD形成的SiC产品。 该产品的特征在于具有位于其表面或主结构内的至少一个具有不同晶粒特性的SiC层,并且对于波长范围为300-2,500nm,透光率为0.4%以下,2.5% 在2500nm以上的波长范围。 形成的SiC产品的制造方法的特征在于,通过改变CVD反应条件,在其表面或主要结构内形成至少一个具有不同晶粒特性的SiC层。

    Continuously variable speed transmission
    4.
    发明授权
    Continuously variable speed transmission 失效
    连续变速传动

    公开(公告)号:US5057061A

    公开(公告)日:1991-10-15

    申请号:US451983

    申请日:1989-12-18

    CPC分类号: F16H37/021 F16H61/66272

    摘要: A continuously variable speed transmission having a belt drive continuously variable speed transmission in which a belt is wrapped around primary and secondary pulleys each supported on a shaft and each consisting of a pair of sheaves capable of relatively moving axially, and a forward/reverse rotation changeover mechanism. The belt drive continuously variable speed transmission is provided with a pressure adjusting cam mechanism for applying an axial force corresponding to a transmitted torque to at least one of the pulleys, ball screw mechanisms for axially moving the movable sheaves of the pulleys. A fluid torque converter is disposed on the transmission upstream side of the primary pulley. In the belt drive continuously variable speed transmission, the pressure adjusting cam mechanism produces and axial force corresponding to the transmitted torque to clamp the belt, and the power is transmitted by the effect of this clamping force without belt slip. If at the time of vehicle starting the torque of the fluid torque converter is increased, the pressure adjusting cam mechanism produces a larger axial force corresponding to the increased torque, thereby clamping the belt by a larger force to prevent the belt from slipping during transmission of power. This large belt clamping force is produced for only a short time for vehicle starting. As the torque of the fluid torque converter is reduced to a coupling range, the axial force produced by the pressure adjusting cam mechanism is correspondingly reduced automatically. The belt is clamped by a reduced axial force for a greater part of the operating time.

    摘要翻译: 一种连续变速传动装置,其具有皮带驱动无级变速传动装置,其中,皮带缠绕在主轴和副皮带轮之间,每个皮带轮均支撑在轴上,每个皮带轮均包括能够轴向相对移动的一对滑轮,以及前/后旋转切换 机制。 皮带传动连续变速传动装置设置有压力调节凸轮机构,用于向至少一个滑轮施加对应于传递转矩的轴向力,用于轴向移动滑轮的可动滑轮的滚珠丝杠机构。 一个液力变矩器设置在主滑轮的变速器上游侧。 在皮带驱动无级变速传动中,压力调节凸轮机构产生对应于传递扭矩的轴向力,以夹紧皮带,并且通过该夹紧力的作用传递动力,而没有皮带打滑。 如果在车辆启动时,液力变矩器的扭矩增加,则压力调节凸轮机构产生对应于增加的扭矩的较大的轴向力,从而通过较大的力夹紧皮带,以防止皮带在传动期间滑动 功率。 这种较大的皮带夹紧力仅在短时间内用于车辆起动。 随着液力变矩器的扭矩减小到耦合范围,由压力调节凸轮机构产生的轴向力自动相应地减小。 皮带被减小的轴向力夹持在较大部分的运行时间。

    SiC-formed material
    6.
    发明授权
    SiC-formed material 有权
    SiC形成材料

    公开(公告)号:US06893749B2

    公开(公告)日:2005-05-17

    申请号:US09842519

    申请日:2001-04-25

    摘要: A nitrogen-doped n-type SiC-formed material consisting of high purity β-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10−3 to 10−5 Ωm. The SiC-formed material is manufactured under conditions of the raw material gas concentration, in terms of the ratio of the raw material flow rate (l/min) to the carrier gas flow rate (l/min), introduced into the CVD reaction chamber, of 5-15 vol %, the nitrogen gas concentration, in terms of the ratio of the nitrogen gas flow rate (l/min) to the raw material gas flow rate (l/min), of 10-120 vol %, and the raw material gas retardation time of 7-110 seconds, wherein, the raw material gas retardation time (sec)={(Effective reaction volume in the reaction chamber (l))/(raw material gas flow rate (l/min))}×{(273+20)/(273+Reaction temperature (° C.))}×60.

    摘要翻译: 由具有低电阻率和低透光率的高纯度β型晶体组成的氮掺杂n型SiC形成材料,并且适合用作半导体制造器件的衬底,以及制造SiC形成材料的方法 以高生产率和提高的沉积速率获得SiC形成的材料。 SiC形成的材料通过CVD法将原料气体和载气与氮气导入,在基板上形成SiC膜,除去基板。 该材料的比重为3.15以上,透光率为1.1〜0.05%,电阻率为3×10 -3〜10 -5Ω。 在原料气体浓度的条件下,以引入CVD反应室内的原料流量(1 / min)与载气流量(l / min)的比例来制造SiC形成材料 的5〜15体积%,氮气流量(1 / min)与原料气体流量比(l / min)的比例为10〜120体积%,氮气浓度为 原料气体滞留时间为7-110秒,原料气体滞留时间(sec)= {(反应室(1)中的有效反应体积)/(原料气体流量(1 / min)) } x {(273 + 20)/(273 +反应温度(℃))}×60。